公开(公告)号：US20180151763A1

公开(公告)日：2018-05-31

申请号：US15825388

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Seongjun PARK ,  Yongseon SHIN ,  Woojong YU

IPC: H01L31/032 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66

Abstract: Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.

公开(公告)号：US20180130843A1

公开(公告)日：2018-05-10

申请号：US15800229

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146

CPC classification number: H01L27/14667 ,  B82Y15/00 ,  H01L27/14636 ,  H01L31/0264 ,  H01L31/074

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US20160359062A1

公开(公告)日：2016-12-08

申请号：US14932701

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Jaeho LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Seongjun PARK

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0264

CPC classification number: H01L31/0352 ,  H01L31/0264 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/036 ,  H01L31/112 ,  H01L31/18 ,  Y02E10/547

Abstract: An optical device including a two-dimensional material and a method of manufacturing the same are provided. The optical device may include a barrier stack formed on a bottom channel layer, a top channel layer formed on the barrier stack, a drain electrode connected to the bottom channel layer, a source electrode formed on a substrate. The barrier stack may include two or more barrier layers, and one or more channel units at least partially interposing between the barrier layers. Channel units connected to the drain electrode and channel units connected to the source electrode may be formed, in an alternating sequence, between barrier layers included in the barrier stack. The barrier layers may each have a thickness which is less than a distance which may be traveled by electrons and holes generated by photo absorption prior to recombination. As a result, the optical device may provide improved photo separation efficiency.

Abstract translation: 提供了包括二维材料的光学装置及其制造方法。 光学器件可以包括形成在底部沟道层上的势垒堆叠，形成在势垒堆叠上的顶部沟道层，连接到底部沟道层的漏电极，形成在衬底上的源电极。 势垒堆叠可以包括两个或更多个阻挡层，以及至少部分地插入阻挡层之间的一个或多个沟道单元。 连接到漏电极的通道单元和连接到源极的通道单元可以以交替的顺序形成在阻挡叠层中包括的阻挡层之间。 阻挡层可以各自具有小于在复合之前由光吸收产生的电子和空穴行进的距离的厚度。 结果，光学装置可以提供改善的光分离效率。

公开(公告)号：US20160343891A1

公开(公告)日：2016-11-24

申请号：US14971019

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jaeho LEE ,  Seongjun PARK

IPC: H01L31/032 ,  H01L31/0352 ,  H01L27/144 ,  H01L29/786 ,  H01L29/12 ,  H01L29/45 ,  H01L29/66 ,  H01L31/0224 ,  H01L29/24

CPC classification number: H01L31/032 ,  H01L27/1446 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66977 ,  H01L29/786 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/1884 ,  Y02E10/50

Abstract: Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.

Abstract translation: 示例实施例涉及包括二维（2D）材料的半导体器件以及制造半导体器件的方法。 半导体器件可以是包括至少一种掺杂的2D材料的光电子器件。 光电子器件可以包括第一电极，第二电极和第一和第二电极之间的半导体层。 第一电极和第二电极中的至少一个可以包括掺杂的石墨烯。 半导体层可具有大于或等于约0.1eV，或大于或等于约0.3eV的内置电位。 第一电极和第二电极之一可以包括p掺杂的石墨烯，另一个可以包括n掺杂的石墨烯。 或者，第一电极和第二电极中的一个可以包括p掺杂或n掺杂的石墨烯，另一个可以包括金属材料。

公开(公告)号：US20150364545A1

公开(公告)日：2015-12-17

申请号：US14600888

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Taeho KIM ,  Kiyoung LEE ,  Seongjun PARK

IPC: H01L29/10 ,  H01L29/16 ,  H01L29/775 ,  H01L27/12 ,  H01L27/144 ,  H01L29/12 ,  H01L27/146

CPC classification number: H01L29/1033 ,  H01L27/1222 ,  H01L27/1443 ,  H01L27/156 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/778 ,  H01L29/78681 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/1136 ,  H01L33/0041 ,  H01L33/06 ,  H01L33/34 ,  Y02E10/547

Abstract: According to example embodiments, an electronic device includes channel layer including a graphene layer electrically contacting a quantum dot layer including a plurality of quantum dots, a first electrode and a second electrode electrically connected to the channel layer, respectively, and a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer. A gate insulating layer may be between the gate electrode and the channel layer.

Abstract translation: 根据示例性实施例，电子设备包括沟道层，该沟道层包括与包括多个量子点的量子点层电接触的石墨烯层，分别与沟道层电连接的第一电极和第二电极，以及栅电极， 通过沟道层控制第一电极和第二电极之间的电流。 栅绝缘层可以在栅电极和沟道层之间。