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公开(公告)号：US20190103510A1
公开(公告)日：2019-04-04
申请号：US16190538
申请日：2018-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK , Sung Hyun SIM , Hanul YOO
IPC: H01L33/08 , H01L33/50 , H01L33/58 , H01L25/075 , H01L33/38 , G09G3/20 , G09G3/32 , H01L33/46 , H01L33/62
CPC classification number: H01L33/08 , G09G3/2003 , G09G3/32 , H01L25/0756 , H01L33/382 , H01L33/46 , H01L33/504 , H01L33/58 , H01L33/62 , H01L2224/16145
Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
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Patent Agency Ranking
公开(公告)号：US20180261738A1
公开(公告)日：2018-09-13
申请号：US15973977
申请日：2018-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Wan Tae LIM , Yong II KIM , Hye Seok NOH , Eun Joo SHIN , Sung Hyun SIM , Hanul YOO
IPC: H01L33/58 , H01L33/50 , H01L33/44 , H01L33/00 , F21K9/275 , F21S8/02 , F21K9/237 , F21Y115/10 , F21Y103/10 , F21V23/00
CPC classification number: H01L33/58 , F21K9/237 , F21K9/275 , F21S8/026 , F21V23/005 , F21Y2103/10 , F21Y2115/10 , H01L33/0079 , H01L33/44 , H01L33/505 , H01L2224/11
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
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公开(公告)号：US20160351764A1
公开(公告)日：2016-12-01
申请号：US15163204
申请日：2016-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Wan Tae LIM , Yong Il KIM , Hye Seok NOH , Eun Joo SHIN , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L33/58 , F21K9/237 , F21K9/275 , F21S8/026 , F21V23/005 , F21Y2103/10 , F21Y2115/10 , H01L33/0079 , H01L33/44 , H01L33/505 , H01L2224/11
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
Abstract translation: 半导体发光器件包括：发光结构，包括分别提供发光结构的彼此相对的第一表面和第二表面的第一导电类型半导体层和第二导电类型半导体层，以及 有源层插入在第一导电型半导体层和第二导电类型半导体层之间，第一导电型半导体层的区域朝向第二表面开口，第一表面具有设置在其上的凹凸部分; 分别设置在第一导电型半导体层的区域和第二导电型半导体层的区域上的第一电极和第二电极; 设置在所述发光结构的第一表面上的透明支撑基板; 以及设置在发光结构的第一表面和透明支撑基板之间的透明粘合剂层。
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公开(公告)号：US20160125804A1
公开(公告)日：2016-05-05
申请号：US14825670
申请日：2015-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Young Soo PARK , Sung Hyun SIM , Je Won KIM
CPC classification number: G09G3/3233 , G09G2300/0426 , G09G2300/0452 , G09G2300/0852 , G09G2310/0297 , H01L27/156
Abstract: There is provided a display device including a plurality of pixels. Each of the plurality of pixels may include a plurality of switching devices, at least one capacitor, and a semiconductor light-emitting device. The display device may further include a driving circuit configured to apply currents to the semiconductor light-emitting device through the plurality of switching devices and at least one capacitor. The semiconductor light-emitting device may emit red light, green light, and blue light through the currents applied by the driving circuit.
Abstract translation: 提供了包括多个像素的显示装置。 多个像素中的每一个可以包括多个开关器件，至少一个电容器和半导体发光器件。 显示装置还可以包括被配置为通过多个开关装置和至少一个电容器向半导体发光装置施加电流的驱动电路。 半导体发光装置可以通过由驱动电路施加的电流发出红光，绿光和蓝光。
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公开(公告)号：US20150129834A1
公开(公告)日：2015-05-14
申请号：US14472089
申请日：2014-08-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Dong Hoon LEE , Min Wook CHOI , Kyung Wook HWANG
Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer, a plurality of light emitting nanostructures disposed on the first conductivity-type semiconductor base layer to be spaced apart from one another, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and a filling layer including a refractive portion disposed between the light emitting nanostructures and a cover portion filled between the light emitting nanostructures and enclosing the refractive portion.
Abstract translation: 提供了一种半导体发光器件，其包括第一导电型半导体基底层，设置在第一导电型半导体基底层上彼此间隔开的多个发光纳米结构，每个发光纳米结构包括第一导电性 以及填充层，其包括设置在发光纳米结构之间的折射部分和填充在发光纳米结构之间并包围折射部分的覆盖部分。
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公开(公告)号：US20130313514A1
公开(公告)日：2013-11-28
申请号：US13842812
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook HWANG , Geon Wook YOO , Nam Goo CHA , Jae Hyeok HEO , Han Kyu SEONG , Hun Jae CHUNG
IPC: H01L33/16
CPC classification number: H01L33/16 , B82Y20/00 , B82Y30/00 , B82Y99/00 , H01L33/08 , H01L33/24 , H01L33/38 , H01L33/405 , Y10S977/762
Abstract: There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer.
Abstract translation: 提供了一种半导体发光器件，包括：衬底和在衬底上彼此间隔开的纳米结构。 纳米结构包括第一导电型半导体层芯，有源层和第二导电型半导体层。 填料填充纳米结构之间的空间并形成为低于多个纳米结构。 形成电极以覆盖纳米结构的上部和纳米结构的侧表面的部分并电连接到第二导电型半导体层。
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