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    Fan-out semiconductor package
    21.
    发明授权
    Fan-out semiconductor package 有权

    公开(公告)号：US10714440B2

    公开(公告)日：2020-07-14

    申请号：US16042644

    申请日：2018-07-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Han Kim ,  Kyung Moon Jung ,  Seok Hwan Kim ,  Kyung Ho Lee ,  Kang Heon Hur

    IPC: H01L23/00

    Abstract: A fan-out semiconductor package includes a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposing the active surface, an encapsulant sealing at least a portion of the inactive surface, a first connection member disposed on the active surface and including a redistribution layer and a first via electrically connecting the connection pad to the redistribution layer, a passivation layer disposed on the first connection member, and an under-bump metal layer including an external connection pad disposed on the passivation layer and a second via connecting the external connection pad to the redistribution layer. In a vertical direction, the first and second vias are disposed within the external connection pad and do not overlap each other.

    Fan-out semiconductor package
    23.
    发明授权
    Fan-out semiconductor package 有权

    公开(公告)号：US10403588B2

    公开(公告)日：2019-09-03

    申请号：US15402383

    申请日：2017-01-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Han Kim ,  Kyung Moon Jung ,  Seok Hwan Kim ,  Kyung Ho Lee ,  Kang Heon Hur

    IPC: H01L23/528 ,  H01L23/498 ,  H01L23/00

    Abstract: A fan-out semiconductor package includes a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposing the active surface, an encapsulant sealing at least a portion of the inactive surface, a first connection member disposed on the active surface and including a redistribution layer and a first via electrically connecting the connection pad to the redistribution layer, a passivation layer disposed on the first connection member, and an under-bump metal layer including an external connection pad disposed on the passivation layer and a second via connecting the external connection pad to the redistribution layer. In a vertical direction, the first and second vias are disposed within the external connection pad and do not overlap each other.

    IMAGE SENSORS
    24.
    发明申请
    IMAGE SENSORS 审中-公开

    公开(公告)号：US20180294297A1

    公开(公告)日：2018-10-11

    申请号：US15862013

    申请日：2018-01-04

    Applicant: Samsung Electronics Co. Ltd.

    Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

    IPC: H01L27/146 ,  H04N5/369

    CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N5/369 ,  H04N5/37457

    Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

    Image sensors
    27.
    发明授权
    Image sensors 有权

    公开(公告)号：US11817465B2

    公开(公告)日：2023-11-14

    申请号：US18155785

    申请日：2023-01-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

    IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

    CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

    Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

    Image sensor
    28.
    发明授权
    Image sensor 有权

    公开(公告)号：US11791365B2

    公开(公告)日：2023-10-17

    申请号：US17370724

    申请日：2021-07-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Ho Lee

    IPC: H01L27/146 ,  H04N25/59 ,  H04N25/75

    CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14612 ,  H04N25/59 ,  H04N25/75 ,  H01L27/14621 ,  H01L27/14627

    Abstract: An image sensor includes a pixel array including a plurality of pixels arranged in a first direction and a second direction. Each pixel of the plurality of pixels includes a plurality of photodiodes disposed adjacent to one another in at least one of the first direction and the second direction. The image sensor further includes a control logic configured to generate image data by obtaining pixel signals from the plurality of pixels, and read a pixel voltage corresponding to charges generated by two or more of the plurality of photodiodes included in one of the plurality of pixels, at substantially the same time.

    Image sensor with pixel structure including floating diffusion area shared by plurality of photoelectric conversion elements and a signal readout mode
    29.
    发明授权
    Image sensor with pixel structure including floating diffusion area shared by plurality of photoelectric conversion elements and a signal readout mode 有权

    公开(公告)号：US11627277B2

    公开(公告)日：2023-04-11

    申请号：US17586892

    申请日：2022-01-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun Sub Shim ,  Kyung Ho Lee

    IPC: H04N5/378 ,  H01L27/146

    Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

    IMAGE SENSOR WITH PIXEL STRUCTURE INCLUDING FLOATING DIFFUSION AREA SHARED BY PLURALITY OF PHOTOELECTRIC CONVERSION ELEMENTS
    30.
    发明申请
    IMAGE SENSOR WITH PIXEL STRUCTURE INCLUDING FLOATING DIFFUSION AREA SHARED BY PLURALITY OF PHOTOELECTRIC CONVERSION ELEMENTS 有权

    公开(公告)号：US20220150434A1

    公开(公告)日：2022-05-12

    申请号：US17586892

    申请日：2022-01-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eun Sub SHIM ,  Kyung Ho Lee

    IPC: H04N5/378 ,  H01L27/146

    Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

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