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    MEMORY DEVICE INCLUDING VARIABLE SERIAL RESISTIVE ELEMENT HAVING VOLTAGE DIVIDING EFFECT AND OPERATING METHOD THEREOF
    21.
    发明申请
    MEMORY DEVICE INCLUDING VARIABLE SERIAL RESISTIVE ELEMENT HAVING VOLTAGE DIVIDING EFFECT AND OPERATING METHOD THEREOF 有权

    公开(公告)号：US20250029656A1

    公开(公告)日：2025-01-23

    申请号：US18774249

    申请日：2024-07-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yumin KIM ,  Seyun KIM ,  Garam PARK ,  Hyunjae SONG ,  Seungyeul YANG ,  Seungdam HYUN

    IPC: G11C13/00

    Abstract: A memory device including a variable serial resistive element having a voltage dividing effect and an operating method thereof are disclosed. The memory device includes a memory unit, a variable serial resistive element connected to the memory unit, a controller connected to the variable serial resistive element and configured to control a resistance of the variable serial resistive element, and a power source connected to the variable serial resistive element. The operating method of the memory device includes maintaining a resistance of a serial resistive element connected to a memory element as a first resistance during a first operation of the memory element and maintaining the resistance of the serial resistive element as a second resistance during a second operation of the memory element, wherein the serial resistive element includes a variable resistive element.

    MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    24.
    发明公开
    MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20230225138A1

    公开(公告)日：2023-07-13

    申请号：US18185817

    申请日：2023-03-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yumin KIM ,  Seyun KIM ,  Jinhong KIM ,  Soichiro MIZUSAKI ,  Youngjin CHO

    IPC: H01L47/00

    CPC classification number: H10B63/84 ,  H10B63/34 ,  H10N70/011 ,  H10N70/8833 ,  H10N70/231 ,  H10N70/8828 ,  H10N70/841

    Abstract: A memory device may include an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction, a recording material layer on the insulating structure and extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure, a channel layer on the recording material layer and extending along a surface of the recording material layer, a gate insulating layer on the channel layer; and a gate electrode formed on the gate insulating layer at a location facing a second surface of the insulating structure. The second surface of the insulating structure may be a protruding upper surface of the protrusion portion.

    VARIABLE RESISTANCE MEMORY DEVICE
    25.
    发明申请
    VARIABLE RESISTANCE MEMORY DEVICE 有权

    公开(公告)号：US20230121581A1

    公开(公告)日：2023-04-20

    申请号：US17741847

    申请日：2022-05-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seyun KIM ,  Doyoon KIM ,  Yumin KIM ,  Hyunjae SONG ,  Seungyeul YANG

    IPC: H01L27/24

    Abstract: A variable resistance memory device includes: a supporting layer including an insulating material; a variable resistance layer on the supporting layer and including a first layer including a metal oxide and metal nanoparticles, the variable resistance layer including a second layer on the first layer and including an oxide; a channel layer on the variable resistance layer; a gate insulating layer on the channel layer; and a gate electrode on the gate insulating layer. The metal nanoparticles in the variable resistance layer include a first metal capable of combining with oxygen ions of the metal oxide, thereby increasing oxygen vacancies.

    VARIABLE RESISTANCE MEMORY DEVICE
    27.
    发明申请
    VARIABLE RESISTANCE MEMORY DEVICE 有权

    公开(公告)号：US20220246679A1

    公开(公告)日：2022-08-04

    申请号：US17523381

    申请日：2021-11-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngjin CHO ,  Seyun KIM ,  Yumin KIM ,  Doyoon KIM ,  Jinhong KIM ,  Soichiro MIZUSAKI

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A variable resistance memory device includes a support layer including an insulating material; a variable resistance layer on the support layer and including a variable resistance material; a capping layer between the support layer and the variable resistance layer and protecting the variable resistance layer; a channel layer on the variable resistance layer; a gate insulating layer on the channel layer; and a plurality of gate electrodes and a plurality of insulators alternately and repeatedly arranged on the gate insulating layer in a first direction parallel with the channel layer. The capping layer may maintain oxygen vacancies formed in the variable resistance layer.

    VARIABLE RESISTANCE MEMORY DEVICE
    29.
    发明申请
    VARIABLE RESISTANCE MEMORY DEVICE 有权

    公开(公告)号：US20210202840A1

    公开(公告)日：2021-07-01

    申请号：US16999285

    申请日：2020-08-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seyun KIM ,  Jinhong KIM ,  Soichiro MIZUSAKI ,  Jungho YOON ,  Youngjin CHO

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer is on the first layer and formed of a second material having a density different from a density of the first material. The first conductive element and a second conductive element are located on the variable resistance layer and spaced apart from each other in order to form a current path in the variable resistance layer. The current path is in a direction perpendicular to a direction in which the first layer and the second layer are stacked.

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