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    VARIABLE RESISTANCE MEMORY DEVICE
    3.
    发明申请
    VARIABLE RESISTANCE MEMORY DEVICE 有权

    公开(公告)号：US20230121581A1

    公开(公告)日：2023-04-20

    申请号：US17741847

    申请日：2022-05-11

    申请人： Samsung Electronics Co., Ltd.

    发明人： Seyun KIM ,  Doyoon KIM ,  Yumin KIM ,  Hyunjae SONG ,  Seungyeul YANG

    IPC分类号： H01L27/24

    摘要： A variable resistance memory device includes: a supporting layer including an insulating material; a variable resistance layer on the supporting layer and including a first layer including a metal oxide and metal nanoparticles, the variable resistance layer including a second layer on the first layer and including an oxide; a channel layer on the variable resistance layer; a gate insulating layer on the channel layer; and a gate electrode on the gate insulating layer. The metal nanoparticles in the variable resistance layer include a first metal capable of combining with oxygen ions of the metal oxide, thereby increasing oxygen vacancies.

    LAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    LAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND METHOD OF MANUFACTURING THE SAME 审中-公开
    包括扩散障碍层的层结构及其制造方法

    公开(公告)号：US20160240482A1

    公开(公告)日：2016-08-18

    申请号：US14814938

    申请日：2015-07-31

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hyunjae SONG ,  Seunggeol NAM ,  Yeonchoo CHO ,  Seongjun PARK ,  Hyeonjin SHIN ,  Jaeho LEE

    IPC分类号： H01L23/532 ,  H01L21/768

    CPC分类号： H01L23/53209 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5226

    摘要： Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

    摘要翻译： 示例实施例涉及具有扩散阻挡层的层结构及其制造方法。 层结构包括第一和第二材料层以及它们之间的扩散阻挡层。 扩散阻挡层包括纳米晶石墨烯（nc-G）层。 在层结构中，扩散阻挡层还可以与nc-G层一起包括非石墨烯金属化合物层或石墨烯层。 第一和第二材料层之一是绝缘层，金属层或半导体层，其余层可以是金属层。

    VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
    8.
    发明公开
    VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240196763A1

    公开(公告)日：2024-06-13

    申请号：US18214755

    申请日：2023-06-27

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Yumin KIM ,  Seyun KIM ,  Garam PARK ,  Hyunjae SONG ,  Seungyeul YANG ,  Seungdam HYUN ,  Jooheon KANG ,  Jinwoo LEE

    IPC分类号： H10N70/00 ,  H10B63/00

    CPC分类号： H10N70/826 ,  H10B63/84 ,  H10N70/8833

    摘要： A variable resistance memory device includes a pillar, a resistance change layer provided at a side surface of the pillar, a semiconductor layer provided at a side surface of the resistance change layer, a gate insulating layer provided at a side surface of the semiconductor layer, a plurality of isolating layers and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer, and an internal resistance layer between the resistance change layer and the semiconductor layer, where a resistance of the internal resistance layer is greater than a resistance of the semiconductor layer when the semiconductor layer includes conductor characteristics and the resistance of the internal resistance layer is less than the resistance of the semiconductor layer when the semiconductor layer includes insulator characteristics.