公开(公告)号：US08946789B2

公开(公告)日：2015-02-03

申请号：US13295620

申请日：2011-11-14

Applicant: Sun-kook Kim ,  Woong Choi ,  Sang-yoon Lee

Inventor： Sun-kook Kim ,  Woong Choi ,  Sang-yoon Lee

IPC: H01L29/76 ,  H01L29/06 ,  H01L29/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/775 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/42

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/775 ,  H01L29/78648 ,  H01L29/78696 ,  H01L51/0048 ,  H01L51/0554 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0579 ,  H01L51/424 ,  Y02E10/549 ,  Y02P70/521

Abstract: An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).

Abstract translation: 示例性实施例涉及包括沟道层的晶体管。 晶体管的沟道层可以包括在垂直方向上彼此间隔开的多个单位层。 每个单元层可以包括在水平方向上彼此间隔开的多个单位通道。 每个单元层中的单位通道可以形成条纹图案。 每个单位通道可以包括多个纳米结构。 每个纳米结构可以具有纳米管或纳米线结构，例如碳纳米管（CNT）。

公开(公告)号：US08476636B2

公开(公告)日：2013-07-02

申请号：US12314212

申请日：2008-12-05

Applicant: Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L27/01 ,  H01L27/12

CPC classification number: H01L29/78624 ,  H01L29/66765

Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Abstract translation: 提供可以是多晶硅薄膜晶体管（TFT）及其制造方法。 多晶硅TFT可以包括由多晶硅形成并掺杂低浓度的有源层上的第一多晶硅层; 和在第一多晶硅层上掺杂与第一多晶硅层相同的浓度或具有比第一多晶硅层更高的浓度的第二多晶硅层，其中能够 可以在第一多晶硅层的内端部形成减少漏电流。

公开(公告)号：US08383467B2

公开(公告)日：2013-02-26

申请号：US13564082

申请日：2012-08-01

Applicant: Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20130021388A1

公开(公告)日：2013-01-24

申请号：US13554443

申请日：2012-07-20

Applicant: Kyu-hwan Choi ,  Jung-mok Bae ,  Hoon Song ,  Sang-yoon Lee ,  Yoon-sun Choi ,  Eok-su Kim

Inventor： Kyu-hwan Choi ,  Jung-mok Bae ,  Hoon Song ,  Sang-yoon Lee ,  Yoon-sun Choi ,  Eok-su Kim

IPC: G09G5/10 ,  G02B26/02 ,  G09G3/36

CPC classification number: G02B26/005 ,  G02B5/06 ,  G02B27/2214 ,  G09G3/003 ,  G09G3/3406 ,  G09G3/38 ,  H04N13/32

Abstract: A light refraction controlling panel, a 3D-display, and a method of operating a 3D-display are provided. The light refraction controlling panel includes a transparent substrate, a barrier wall on the transparent substrate, first to fourth electrodes on the barrier wall, the first to fourth electrodes being separated from each other, an electro-wetting prism within the barrier wall, the electro-wetting prism being configured to refract incident light to a desired direction, and an isolation layer between the barrier wall and the first to fourth electrodes, and the electro-wetting prism. One electrode of two adjacent electrodes of the first to fourth electrodes is inside an other electrode of the two adjacent electrodes.

Abstract translation: 提供了光折射控制面板，3D显示器和操作3D显示器的方法。 光折射控制面板包括透明基板，透明基板上的阻挡壁，阻挡壁上的第一至第四电极，第一至第四电极彼此分离，阻挡壁内的电润湿棱镜，电气 湿润棱镜被配置为将入射光折射到期望的方向，以及在阻挡壁和第一至第四电极之间的隔离层以及电润湿棱镜。 第一至第四电极的两个相邻电极的一个电极在两个相邻电极的另一个电极内。

公开(公告)号：US08120029B2

公开(公告)日：2012-02-21

申请号：US12453293

申请日：2009-05-06

Applicant: Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/04

CPC classification number: H01L29/78609 ,  H01L29/78618

Abstract: Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.

Abstract translation: 公开了一种薄膜晶体管（TFT）。 TFT可以包括通道与源极和漏极之间的中间层。 由于中间层，由于TFT的漏极区域可能发生的增加的截止电流减小。 因此，可以稳定地驱动TFT。

公开(公告)号：US20120025187A1

公开(公告)日：2012-02-02

申请号：US13064428

申请日：2011-03-24

Applicant: Kyung-bae Park ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Tae-sang Kim ,  Eok-su Kim ,  Kyoung-seok Son ,  Wan-joo Maeng ,  Joon-seok Park

Inventor： Kyung-bae Park ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Tae-sang Kim ,  Eok-su Kim ,  Kyoung-seok Son ,  Wan-joo Maeng ,  Joon-seok Park

IPC: H01L29/786 ,  H01L21/44

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

Abstract: Transistors, methods of manufacturing the transistors, and electronic devices including the transistors. The transistor may include an oxide channel layer having a multi-layer structure. The channel layer may include a first layer and a second layer that are sequentially arranged from a gate insulation layer. The first layer may be a conductor, and the second layer may be a semiconductor having a lower electrical conductivity than that of the first layer. The first layer may become a depletion region according to a gate voltage condition.

Abstract translation: 晶体管，制造晶体管的方法以及包括晶体管的电子器件。 晶体管可以包括具有多层结构的氧化物沟道层。 沟道层可以包括从栅极绝缘层顺序排列的第一层和第二层。 第一层可以是导体，第二层可以是具有比第一层低的导电性的半导体。 第一层可以根据栅极电压条件成为耗尽区。

公开(公告)号：US20110127518A1

公开(公告)日：2011-06-02

申请号：US12805379

申请日：2010-07-28

Applicant: Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

Inventor： Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

IPC: H01L29/786 ,  H01L21/44 ,  H01L33/44

CPC classification number: H01L29/7869 ,  H01L29/78606

Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.

Abstract translation: 提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。 晶体管可以包括沟道层上的钝化层，源极，漏极和栅极，其中钝化层的成分在高度方向上变化。 钝化层可以具有依次层叠的包括氧化硅层，氮氧化硅层和氮化硅层的多层结构。 沟道层可以包括氧化物半导体。

公开(公告)号：US20090291211A1

公开(公告)日：2009-11-26

申请号：US12292595

申请日：2008-11-21

Applicant: Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

IPC: C23C16/54 ,  B05B3/18 ,  B05B1/18

CPC classification number: C23C16/45565 ,  C23C16/45551 ,  C23C16/45574

Abstract: Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed.

Abstract translation: 示例性实施例提供原子层沉积设备和使用原子层沉积设备沉积原子层的方法。 原子层沉积装置可以包括反应室，安装在反应室中以支撑基板的基板支撑件和设置在基板支撑件上方并具有至少一个同时喷射第一源气体的喷嘴组的喷淋头， 第二源气体和吹扫气体到基板上。 沉积原子层的方法可以包括沿第一方向移动衬底和淋浴头中的至少一个，并且通过注入第一源气体同时在衬底上沉积至少一个第一原子层和至少一个第二原子层， 第二源气体和通过淋浴喷头的净化气体进行移动操作。

公开(公告)号：US20090141203A1

公开(公告)日：2009-06-04

申请号：US12153657

申请日：2008-05-22

Applicant: Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  G02F2203/01

Abstract: A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.

Abstract translation: 提供了包括氧化物半导体薄膜晶体管的显示装置。 显示装置包括至少一个薄膜晶体管和至少一个存储电容器。 存储电容器包括由透明氧化物半导体形成的存储电极和存储电极之上的像素电极。 像素电极可以与存储电极分离所需的距离。

公开(公告)号：US20080266391A1

公开(公告)日：2008-10-30

申请号：US12090557

申请日：2006-10-16

Applicant: Sang-yoon Lee ,  Yi-bae Choi ,  Min-gu Kang ,  Ssang-gun Lim

Inventor： Sang-yoon Lee ,  Yi-bae Choi ,  Min-gu Kang ,  Ssang-gun Lim

IPC: H04N7/18

CPC classification number: G01B11/25 ,  G01B11/0608 ,  H01L27/148 ,  H04N13/207 ,  H04N13/254

Abstract: An image measuring apparatus for acquiring an image captured by an optical system and a method thereof are disclosed. The apparatus includes a CCD camera for capturing the object and outputting the captured image, a lamp for generating light to illuminate a capturing area of the object, an illumination controller for controlling the lamp to be turned on, a projection grating formed with gratings, a projection grating driving unit for adjusting a distance between the projection grating and the object, an image capturing device for acquiring the image captured by the CCD camera, a driving signal generator for outputting a driving signal to the illumination controller, the projection grating driving unit, and the image capturing unit simultaneously according to an enable signal generated from the CCD camera, and an image signal processor for estimating a three-dimensional image of the object from data transmitted from the image capturing unit.

Abstract translation: 公开了一种用于获取由光学系统捕获的图像的图像测量装置及其方法。 该装置包括用于捕获物体并输出所捕获的图像的CCD照相机，用于产生用于照射被摄体的拍摄区域的光的灯，用于控制被导通的灯的照明控制器，形成有光栅的投影光栅， 投影光栅驱动单元，用于调整投影光栅和物体之间的距离，用于获取由CCD照相机拍摄的图像的图像捕获装置，用于向照明控制器输出驱动信号的驱动信号发生器，投影光栅驱动单元， 以及根据从CCD照相机产生的使能信号同时进行图像捕获单元，以及图像信号处理器，用于根据从图像捕获单元发送的数据估计对象的三维图像。