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40 条记录 (耗时 0.035 秒)

    Power generating element for liquid fuel cell, method for producing the same, and liquid fuel cell using the same
    21.
    发明申请
    Power generating element for liquid fuel cell, method for producing the same, and liquid fuel cell using the same 审中-公开
    液体燃料电池用发电元件及其制造方法以及使用其的液体燃料电池

    公开(公告)号：US20060024562A1

    公开(公告)日：2006-02-02

    申请号：US10537169

    申请日：2004-11-22

    申请人： Hiroshi Kashino ,  Yasuo Arishima ,  Toshihiro Nakai ,  Shingo Nakamura ,  Shinsuke Shibara ,  Shoji Saibara

    发明人： Hiroshi Kashino ,  Yasuo Arishima ,  Toshihiro Nakai ,  Shingo Nakamura ,  Shinsuke Shibara ,  Shoji Saibara

    IPC分类号： H01M4/86 ,  H01M4/92 ,  H01M4/96 ,  H01M4/88

    CPC分类号： H01M8/1009 ,  H01M4/8605 ,  Y02P70/56

    摘要： A liquid fuel cell includes a positive electrode (8) for reducing oxygen, a negative electrode (9) for oxidizing fuel, a solid electrolyte (10) placed between the positive electrode (8) and the negative electrode (9), and liquid fuel (4), wherein the positive electrode (8) and the negative electrode (9) respectively include catalyst layers (8b), (9b) with a thickness of 20 μm or more, at least one of the respective catalyst layers (8b), (9b) has a pore with a pore diameter in a range of 0.3 μm to 2.0 μm, and a pore volume of the pore is 4% or more with respect to a total pore volume. Because of this configuration, a liquid fuel cell with a high output density can be provided in which the pore configuration in the catalyst layer is optimized, and catalyst performance is exhibited sufficiently.

    摘要翻译： 液体燃料电池包括用于还原氧的正极（8），用于氧化燃料的负极（9），置于正极（8）和负极（9）之间的固体电解质（10）和液体燃料 （4），其中所述正极（8）和所述负极（9）分别包括厚度为20μm以上的催化剂层（8b），（9b），所述各个催化剂层（8）中的至少一个 b）中，（9b）具有孔径在0.3μm〜2.0μm范围内的孔，孔的孔体积相对于总孔体积为4％以上。 由于这种构造，可以提供具有高输出密度的液体燃料电池，其中优化催化剂层中的孔结构，并充分发挥催化剂性能。

    Solution for removing residue after semiconductor dry process and method of removing the residue using the same
    23.
    发明授权
    Solution for removing residue after semiconductor dry process and method of removing the residue using the same 有权
    半导体干法除去残留物的方法及使用其除去残渣的方法

    公开(公告)号：US08822396B2

    公开(公告)日：2014-09-02

    申请号：US12671419

    申请日：2008-08-21

    申请人： Shingo Nakamura ,  Takehiko Kezuka

    发明人： Shingo Nakamura ,  Takehiko Kezuka

    IPC分类号： C11D7/32 ,  H01L21/02 ,  C11D11/00 ,  C11D7/34

    CPC分类号： H01L21/02068 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02063

    摘要： A residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the residue-removing solution comprising a Cu surface protective agent including: at least one compound selected from compounds (1), (2) and (3) each having as a basic skeleton a five-membered or six-membered heteratomic structure as defined herein; a compound capable of forming a complex or chelate with Cu (copper); and water. Further, the residue-removing solution has a pH of 4 to 9.

    摘要翻译： 一种用于去除在干蚀刻和/或灰化之后存在于半导体衬底上的残留物的残留物去除溶液，所述残渣除去溶液包含Cu表面保护剂，其包括：至少一种选自化合物（1），（2）和（3）的化合物 ）各自具有如本文所定义的五元或六元杂原子结构作为基本骨架; 能够与Cu（铜）形成络合物或螯合物的化合物; 和水。 此外，残渣除去溶液的pH为4〜9。

    Solution for removal of residue after semiconductor dry process and residue removal method using same
    24.
    发明授权
    Solution for removal of residue after semiconductor dry process and residue removal method using same 有权
    半导体干法除渣后的残渣除渣方法

    公开(公告)号：US08747564B2

    公开(公告)日：2014-06-10

    申请号：US13059204

    申请日：2009-08-04

    申请人： Shingo Nakamura

    发明人： Shingo Nakamura

    IPC分类号： B08B3/04 ,  C11D3/30

    CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D11/0047

    摘要： A residue-removing solution for removing residues after a dry process, which includes an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water, the residue-removing solution containing aqueous solution (A) or (B) as described herein. Also disclosed is a method for removing residues present on a semiconductor substrate after dry etching and/or ashing. Further, a method for manufacturing semiconductor devices is further disclosed, which includes subjecting a semiconductor substrate having Cu as an interconnect material, and a low dielectric constant film as an interlayer dielectric material, to dry etching and/or ashing; and bringing the processed semiconductor substrate into contact with the above residue-removing solution.

    摘要翻译： 用于除去干法后的残留物的残留物去除溶液，其包括与铜形成7-或更多元环螯合物的一元羧酸的胺盐和/或多羧酸的盐和水，残余物 - 包含如本文所述的水溶液（A）或（B）的去除溶液。 还公开了用于在干蚀刻和/或灰化之后去除存在于半导体衬底上的残留物的方法。 此外，还公开了一种制造半导体器件的方法，其包括使具有Cu作为互连材料的半导体衬底和作为层间绝缘材料的低介电常数膜进行干蚀刻和/或灰化; 并使经处理的半导体衬底与上述残渣除去溶液接触。

    Temperature measuring device and temperature measuring method
    25.
    发明授权
    Temperature measuring device and temperature measuring method 有权
    温度测量装置和温度测量方法

    公开(公告)号：US08340468B2

    公开(公告)日：2012-12-25

    申请号：US12593811

    申请日：2008-03-25

    申请人： Yuichi Furukawa ,  Shingo Nakamura ,  Yuji Okada ,  Fumio Kawahara

    发明人： Yuichi Furukawa ,  Shingo Nakamura ,  Yuji Okada ,  Fumio Kawahara

    IPC分类号： G06K9/32

    CPC分类号： G01J5/0003 ,  G01J1/0455 ,  G01J2005/0077 ,  G01J2005/0081

    摘要： Feature points (41, 42, 43) in the heat image (10) of a casting die (1) are extracted and a predetermined geometrical conversion processing is performed on the heat image (10) such that the feature points are superimposed on the reference feature points (61, 62, 63) set in a reference heat image (30) picked up previously to generate a corrected heat image (20). A difference image (40) is generated by superimposing the corrected heat image (20) and the reference heat image (30) such that the corrected feature points (51, 52, 53) in the corrected heat image (20) is superimposed on the corresponding reference feature points (61, 62, 63). With such an arrangement, a highly reliable difference image can be generated even when the imaging field of vision slips off among a plurality of heat images.

    摘要翻译： 提取铸造模具（1）的加热图像（10）中的特征点（41,42,43），并对加热图像（10）进行预定的几何转换处理，使得特征点叠加在参考 特征点（61,62,63）设置在先前拾取的参考加热图像（30）中以产生校正热图像（20）。 通过将校正热图像（20）和参考加热图像（30）叠加在校正热图像（20）中的校正特征点（51,52,53）叠加在 相应的参考特征点（61,62,63）。 通过这样的布置，即使当多个热图像中的成像视场滑落时，也可以产生高度可靠的差分图像。

    EX-CORE NUCLEAR INSTRUMENTATION SYSTEM
    26.
    发明申请
    EX-CORE NUCLEAR INSTRUMENTATION SYSTEM 有权
    外核核仪器系统

    公开(公告)号：US20120201339A1

    公开(公告)日：2012-08-09

    申请号：US13233518

    申请日：2011-09-15

    申请人： Shingo Nakamura ,  Tatsuro Kobayashi

    发明人： Shingo Nakamura ,  Tatsuro Kobayashi

    IPC分类号： G21C17/108

    CPC分类号： G21C17/108 ,  G01T1/17

    摘要： An ex-core nuclear instrumentation system in which the width of measurable neutron detector current can be accurately widened is obtained. In order to output the condition of neutron flux in operation by performing arithmetic processing of a current value measured by a neutron detector by using a detector signal processing circuit, the detector signal processing circuit includes a current/voltage conversion unit which converts the current value converted by the neutron detector into a voltage value corresponding to the current value; and a variable gain amplification unit which has an operational amplifier having a resistance circuit for corresponding to current levels, the resistance circuit being capable of selecting a gain, and a D/A converter that adjusts the gain, and amplifies the voltage value converted by the current/voltage conversion unit.

    摘要翻译： 获得可以准确加宽可测量中子探测器电流宽度的核心核仪器系统。 为了通过使用检测器信号处理电路对由中子检测器测量的电流值进行算术处理来输出操作中的中子通量的条件，检测器信号处理电路包括电流/电压转换单元，其将当前值转换 由中子探测器转换成对应于电流值的电压值; 以及可变增益放大单元，其具有运算放大器，该运算放大器具有对应于电流水平的电阻电路，所述电阻电路能够选择增益;以及D / A转换器，其调整所述增益，并放大由所述电压转换器 电流/电压转换单元。

    ETCHING SOLUTION
    28.
    发明申请
    ETCHING SOLUTION 有权
    蚀刻解决方案

    公开(公告)号：US20100112821A1

    公开(公告)日：2010-05-06

    申请号：US12595424

    申请日：2008-04-08

    申请人： Mitsushi Itano ,  Shingo Nakamura ,  Takehiko Kezuka ,  Daisuke Watanabe

    发明人： Mitsushi Itano ,  Shingo Nakamura ,  Takehiko Kezuka ,  Daisuke Watanabe

    IPC分类号： H01L21/306 ,  C09K13/08

    CPC分类号： C09K13/08 ,  C09K13/00 ,  C09K13/06 ,  C09K15/00 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/76814

    摘要： The present invention provides an etching solution in which a change in the composition due to the evaporation of the chemical solution or the like is small, thus reducing the frequency with which the chemical solution must be replaced, and in which the time-dependent change in etch rate is also small, thus allowing uniform etching of a silicon oxide film. Specifically, the present invention relates to an etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.

    摘要翻译： 本发明提供了一种蚀刻溶液，其中由于化学溶液等的蒸发而导致的组成变化小，从而降低了化学溶液必须被更换的频率，并且其中时间依赖性变化 蚀刻速率也很小，从而允许均匀蚀刻氧化硅膜。 具体地说，本发明涉及一种蚀刻溶液及其制造方法及使用该方法的蚀刻方法，其中蚀刻溶液包括氢氟酸（a），氟化铵（b）和形成的盐（c） 在氟化氢和沸点高于氨的沸点之间; 氟化铵（b）的浓度不高于8.2mol / kg，氟化氢和沸点高于氨的碱之间形成的氟化铵（b）和盐（c）的总量不是 小于9.5mol / kg。