公开(公告)号：US20130070576A1

公开(公告)日：2013-03-21

申请号：US13678017

申请日：2012-11-15

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Jie Zou ,  Kaizhong Gao ,  William Albert Challener ,  Mark Henry Ostrowski ,  Venkateswara Rao Inturi ,  Tong Zhao ,  Michael Christopher Kautzky

IPC: G11B13/04

CPC classification number: G11B13/08 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/6088 ,  G11B13/04 ,  G11B2005/0021 ,  Y10T428/11

Abstract: An apparatus includes a near field transducer positioned adjacent to an air bearing surface, a first magnetic pole, a heat sink positioned between the first magnetic pole and the near field transducer, and a diffusion barrier positioned between the near field transducer and the first magnetic pole. The diffusion barrier can be positioned adjacent to the magnetic pole or the near field transducer.

公开(公告)号：US20130026883A1

公开(公告)日：2013-01-31

申请号：US13633004

申请日：2012-10-01

Applicant: Seagate Technology LLC

Inventor： Michael Christopher Kautzky ,  Charles Everett Hawkinson ,  Daniel Paul Burbank ,  John Stuart Wright

IPC: H01L41/22

CPC classification number: H02H3/08 ,  G11B5/4826 ,  G11B5/4873 ,  G11B5/6005 ,  H01L41/1132 ,  H01L41/257 ,  H01L41/338 ,  Y10T29/42

Abstract: A system for poling piezoelectric devices comprises a plurality of thin-film components, a plurality of piezoelectric devices, a poling pad for poling the piezoelectric devices, a plurality of traces, and a plurality of current-limiting elements. The thin-film components are separated by dice lanes to form an array, and the piezoelectric devices are formed on the thin-film components. The traces connect the piezoelectric devices across the dice lanes in parallel to the poling pad. Each current-limiting element is connected in series with one of the piezoelectric devices, in order to limit current to individual piezoelectric devices that experience current-related failure.

Abstract translation: 用于极化压电装置的系统包括多个薄膜部件，多个压电装置，用于极化压电装置的极化垫，多个迹线和多个限流元件。 薄膜部件通过骰子线分隔开形成阵列，并且压电元件形成在薄膜部件上。 迹线将压电元件跨过骰子通道平行于极化垫。 每个限流元件与压电器件之一串联连接，以便将电流限制到经历电流相关故障的各个压电器件。

公开(公告)号：US12249357B2

公开(公告)日：2025-03-11

申请号：US18410008

申请日：2024-01-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

Abstract: A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US20240339125A1

公开(公告)日：2024-10-10

申请号：US18750002

申请日：2024-06-21

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

CPC classification number: G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a thickness; and ion beam milling the layer of the template material to remove thickness less than the first thickness. The ion beam milling may be performed at a two different angles during two different repetitions. At least one of the angles is a channeling angle defined relative to a crystalline microstructure of the template material. After the repetitions, additional material may be deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

公开(公告)号：US11935567B2

公开(公告)日：2024-03-19

申请号：US17877434

申请日：2022-07-29

Applicant: Seagate Technology LLC.

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

CPC classification number: G11B5/314 ,  C30B25/04 ,  G11B5/105 ,  G11B5/1272 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/84 ,  G11B7/124 ,  H01L33/0093 ,  G11B2005/0021 ,  G11B5/6088

Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US09805757B2

公开(公告)日：2017-10-31

申请号：US13867179

申请日：2013-04-22

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Tong Zhao ,  Michael Christopher Kautzky ,  William Albert Challener ,  Michael Allen Seigler

IPC: G11B11/00 ,  G11B5/127 ,  G11B13/04 ,  B82Y10/00 ,  G02B6/10 ,  G11B5/31 ,  G11B5/00 ,  G11B5/60

CPC classification number: G11B13/04 ,  B82Y10/00 ,  G02B6/102 ,  G11B5/1278 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021 ,  Y10T428/11

Abstract: A near field transducer includes gold and at least one dopant. The dopant can include at least one of: Cu, Rh, Ru, Ag, Ta, Cr, Al, Zr, V, Pd, Ir, Co, W, Ti, Mg, Fe, or Mo. The dopant concentration may be in a range from 0.5% and 30%. The dopant can be a nanoparticle oxide of V, Zr, Mg, Ca, Al, Ti, Si, Ce, Y, Ta, W, or Th, or a nitride of Ta, Al, Ti, Si, In, Fe, Zr, Cu, W or B.

公开(公告)号：US09336800B2

公开(公告)日：2016-05-10

申请号：US14816341

申请日：2015-08-03

Applicant: Seagate Technology LLC

Inventor： James Gary Wessel ,  Sarbeswar Sahoo ,  Michael Christopher Kautzky

IPC: G11B5/00 ,  G11B5/31 ,  G11B5/48 ,  G11B5/012 ,  G11B5/187 ,  G11B5/127 ,  G11B5/60 ,  G02B6/122 ,  G02B5/00

CPC classification number: G11B5/3163 ,  G02B5/008 ,  G02B6/1226 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/4866 ,  G11B5/6088 ,  G11B2005/0021

Abstract: A near field transducer with a peg region, an enlarged region disposed adjacent the peg region, and a barrier material disposed between the peg region and the enlarged region. The barrier material reduces or eliminates interdiffusion of material between the peg region and the enlarged region.

公开(公告)号：US09311944B2

公开(公告)日：2016-04-12

申请号：US14070066

申请日：2013-11-01

Applicant: Seagate Technology LLC

Inventor： David J. Ellison ,  Michael Christopher Kautzky ,  Jorge Hanchi

IPC: G11B21/02 ,  G11B5/60

CPC classification number: G11B5/6076 ,  G11B5/6058

Abstract: Example embodiments include an apparatus that has a piezoelectric contact sensor. The piezoelectric contact sensor includes a semiconductor device having a semiconductor material that defines a channel through which current can flow. The piezoelectric contact sensor also includes a piezoelectric element coupled to the semiconductor material. The semiconductor material is configured to modulate the current channel in response to compressive stress waves at the contact sensor. Other example embodiments include an apparatus that has a slider having an air-bearing surface, a write head integral to the slider, and a piezoelectric contact sensor that includes a semiconductor device and a piezoelectric element.

Abstract translation: 示例性实施例包括具有压电接触传感器的装置。 压电接触传感器包括具有半导体材料的半导体器件，该半导体器件限定电流可流过的沟道。 压电接触传感器还包括耦合到半导体材料的压电元件。 半导体材料被配置为响应于接触传感器处的压应力波来调制电流通道。 其他示例性实施例包括具有滑动器的装置，其具有空气轴承表面，与滑块一体的写入头和包括半导体器件和压电元件的压电接触传感器。

公开(公告)号：US20150340050A1

公开(公告)日：2015-11-26

申请号：US14816341

申请日：2015-08-03

Applicant: Seagate Technology LLC

Inventor： James Gary Wessel ,  Sarbeswar Sahoo ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  G11B5/48 ,  G11B5/60

CPC classification number: G11B5/3163 ,  G02B5/008 ,  G02B6/1226 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/4866 ,  G11B5/6088 ,  G11B2005/0021

Abstract: A near field transducer with a peg region, an enlarged region disposed adjacent the peg region, and a barrier material disposed between the peg region and the enlarged region. The barrier material reduces or eliminates interdiffusion of material between the peg region and the enlarged region.

Abstract translation: 具有钉区域的近场换能器，邻近栓钉区域设置的放大区域，以及设置在钉区域和扩大区域之间的阻挡材料。 阻挡材料减少或消除了钉住区域和扩大区域之间材料的相互扩散。

公开(公告)号：US08804468B2

公开(公告)日：2014-08-12

申请号：US13968021

申请日：2013-08-15

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Michael Christopher Kautzky ,  Amit Itagi ,  Michael Allen Seigler

IPC: G11B11/00

CPC classification number: G11B13/08 ,  G11B5/3133 ,  G11B5/6088 ,  G11B2005/0021 ,  Y10T428/1164

Abstract: A near-field transducer includes a substrate that defines a substrate-parallel plane. The near-field transducer also includes a composite layer deposited on the substrate-parallel plane. The composite layer has a first layer of the plasmonic material and a second layer of an insertion material adjacent the substrate. The insertion material reduces plastic deformation of the near-field transducer at elevated temperatures.

Abstract translation: 近场换能器包括限定基板平行平面的基板。 近场换能器还包括沉积在基板平行平面上的复合层。 复合层具有等离子体激元材料的第一层和邻近衬底的插入材料的第二层。 插入材料降低了近场传感器在高温下的塑性变形。