公开(公告)号：US20210020666A1

公开(公告)日：2021-01-21

申请号：US17030560

申请日：2020-09-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yasutaka NAKAZAWA

IPC: H01L27/12 ,  G02F1/1362 ,  H01L21/02 ,  G02F1/1368 ,  H01L29/786

Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.

公开(公告)号：US20200185533A1

公开(公告)日：2020-06-11

申请号：US16789830

申请日：2020-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L27/12

Abstract: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

公开(公告)号：US20180374957A1

公开(公告)日：2018-12-27

申请号：US16110488

申请日：2018-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA ,  Masahiko HAYAKAWA ,  Kenichi OKAZAKI ,  Shunsuke KOSHIOKA

IPC: H01L29/786 ,  H01L27/12 ,  G09G3/20 ,  G09G5/00 ,  G06F3/041 ,  G09G3/36

Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.

公开(公告)号：US20180025905A1

公开(公告)日：2018-01-25

申请号：US15654105

申请日：2017-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Takuya HANDA ,  Masahiro WATANABE

IPC: H01L21/02 ,  H01L27/04 ,  H01L51/52 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L21/02104 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/04 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2251/303

Abstract: A semiconductor device having favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a metal oxide. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, the metal oxide over the first insulating film, a pair of electrodes over the metal oxide, and a second insulating film in contact with the metal oxide. The metal oxide includes a first metal oxide and a second metal oxide in contact with a top surface of the first metal oxide. The first metal oxide and the second metal oxide each contain In, an element M (M is gallium, aluminum, silicon, or the like), and Zn. The first metal oxide includes a region having lower crystallinity than the second metal oxide. The second insulating film includes a region whose thickness is smaller than that of the second metal oxide.

公开(公告)号：US20170338353A1

公开(公告)日：2017-11-23

申请号：US15661040

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/45 ,  H01L29/417 ,  H01L29/49 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

公开(公告)号：US20170256654A1

公开(公告)日：2017-09-07

申请号：US15444703

申请日：2017-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L29/04 ,  G02F1/1343 ,  H01L29/66 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/24 ,  H01L27/12

CPC classification number: H01L29/78696 ,  G02B27/017 ,  G02F1/13338 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/134381 ,  G02F2202/10 ,  G06F1/1643 ,  G06F1/1652 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/32 ,  H01L27/323 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H04M1/0268

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. One embodiment of the present invention is a semiconductor device which includes a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film include the same element. The second oxide semiconductor film includes a region having lower crystallinity than one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US20170256647A1

公开(公告)日：2017-09-07

申请号：US15447203

申请日：2017-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Junichi KOEZUKA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/78606 ,  G06F3/041 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696

Abstract: A gate electrode, a first insulating film thereover, an oxide semiconductor film thereover, a source electrode and a drain electrode thereover, and a second insulating film thereover are included. The source and the drain electrodes each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film includes copper. The first and the third conductive films each include an oxide conductive film. An end portion of the first conductive film includes a region located outward from an end portion of the second conductive film. The third conductive film covers a top surface and a side surface of the second conductive film and includes a region in contact with the first conductive film.

公开(公告)号：US20160155803A1

公开(公告)日：2016-06-02

申请号：US14952459

申请日：2015-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Daisuke KUROSAKI

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device including an oxide semiconductor film. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a channel region and n-type regions in contact with the pair of electrodes. The channel region has fewer oxygen vacancies than the n-type regions.

Abstract translation: 在包括氧化物半导体膜的半导体器件中，电特性的变化受到抑制，可靠性提高。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，以及氧化物半导体膜上的一对电极。 氧化物半导体膜包括与该对电极接触的沟道区和n型区。 通道区域具有比n型区域少的氧空位。

公开(公告)号：US20250056837A1

公开(公告)日：2025-02-13

申请号：US18928429

申请日：2024-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  H10K59/121

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US20250008818A1

公开(公告)日：2025-01-02

申请号：US18711284

申请日：2022-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukinori SHIMA ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Yasutaka NAKAZAWA ,  Naoto GOTO ,  Saki EGUCHI ,  Sachiko KATANIWA

IPC: H10K59/80 ,  H10K39/00 ,  H10K59/12 ,  H10K59/95

Abstract: A display apparatus with extremely high resolution is provided. A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting element and a second light-emitting element over a first insulating layer, a second insulating layer, and a third insulating layer. The first light-emitting element includes a first pixel electrode and a first organic layer. The second light-emitting element includes a second pixel electrode and a second organic layer. The first insulating layer includes a groove-like region provided along a side of the first pixel electrode in a plan view. The groove-like region includes a first region overlapping with the first pixel electrode and a second region overlapping with the second pixel electrode. The first region and the second region each have a width greater than or equal to 20 nm and less than or equal to 500 nm. The second insulating layer includes a region in contact with a top surface of the first organic layer, a region in contact with a side surface of the first organic layer, and a region located below the first pixel electrode. The third insulating layer includes a region in contact with a top surface of the second organic layer, a region in contact with a side surface of the second organic layer, and a region located below the second pixel electrode.