公开(公告)号：US20170170325A1

公开(公告)日：2017-06-15

申请号：US15372554

申请日：2016-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Toshimitsu OBONAI ,  Hiroshi KANEMURA ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L21/465 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/413 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78696

Abstract: An oxide semiconductor film contains In, M (M is Al, Ga, Y, or Sn), and Zn and includes a region with a film density higher than or equal to 6.3 g/cm3 and lower than 6.5 g/cm3. Alternatively, the oxide semiconductor film contains In, M (M is Al, Ga, Y, or Sn), and Zn and includes a region with etching at an etching rate higher than or equal to 10 nm/min and lower than or equal to 45 nm/min when a phosphoric acid aqueous solution obtained by diluting 85 vol % phosphoric acid with water 100 times is used for etching.

公开(公告)号：US20170018578A1

公开(公告)日：2017-01-19

申请号：US15281165

申请日：2016-09-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro KATAYAMA ,  Ami SATO ,  Yukinori SHIMA

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2201/121 ,  G02F2201/123 ,  G06F3/0412 ,  H01L27/0629 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.

Abstract translation: 提供了一种包括具有增加的充电容量而不减小开口率的电容器的半导体器件。 半导体器件包括晶体管，其包括透光半导体膜，在一对电极之间设置电介质膜的电容器和与该晶体管电连接的像素电极。 在电容器中，与晶体管中的透光半导体膜形成在同一表面上的导电膜用作一个电极，像素电极用作另一个电极，并且提供氮化物绝缘膜和第二氧化物绝缘膜 在透光半导体膜和像素电极之间用作电介质膜。

公开(公告)号：US20150372146A1

公开(公告)日：2015-12-24

申请号：US14741961

申请日：2015-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki SHISHIDO ,  Satoru SAITO ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/04 ,  H01L29/24 ,  H01L29/06

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.

Abstract translation: 提供具有稳定电特性的半导体器件。 半导体器件包括氧化物半导体膜，第一栅电极，第二栅电极，第一导电膜和第二导电膜。 第一栅电极电连接到第二栅电极。 第一导电膜和第二导电膜用作源电极和漏电极。 氧化物半导体膜包括与第一导电膜重叠的第一区域，与第二导电膜重叠的第二区域和与栅电极和第三导电膜重叠的第三区域。 第一区域包括与第二区域相对的第一边缘。 第二区域包括与第一区域相对的第二边缘。 第一边缘的长度短于第二边缘的长度。

公开(公告)号：US20150102341A1

公开(公告)日：2015-04-16

申请号：US14505004

申请日：2014-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masahiko HAYAKAWA ,  Takashi HAMOCHI ,  Suzunosuke HIRAISHI

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

Abstract translation: 为了抑制电特性的改变，并提高使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的栅电极，与栅电极重叠的氧化物半导体膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜的表面接触的栅极绝缘膜， 与氧化物半导体膜的表面的相对表面接触的保护膜和与氧化物半导体膜接触的一对电极。 在栅极绝缘膜或保护膜中，通过热处理释放的质荷比为m / z为17的气体的量比通过热处理释放的氮氧化物的量大。

公开(公告)号：US20140374745A1

公开(公告)日：2014-12-25

申请号：US14303629

申请日：2014-06-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hironobu TAKAHASHI ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Masashi TSUBUKU

IPC: H01L27/146 ,  H01L29/786

CPC classification number: H01L27/14663 ,  H01L27/14616 ,  H01L27/14625 ,  H01L27/14692 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869 ,  H04N5/3745

Abstract: An imaging device that is highly stable to irradiation with radial rays such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device takes an image with radial rays such as X-rays and includes pixel circuits arranged in a matrix and a scintillator overlapping the pixel circuits. The pixel circuits each includes a switching transistor with an extremely small off-state current and a light-receiving element which is configured to convert the radial rays to electrical charges. A gate insulating film of the switching transistor has a stacked structure including a silicon nitride film with a thickness of 100 nm to 400 nm and a silicon oxide film or a silicon oxynitride film with a thickness of 5 nm to 20 nm.

Abstract translation: 提供了对X射线等径向射线照射高度稳定的成像装置，能够抑制电特性的降低。 成像装置拍摄具有诸如X射线的径向射线的图像，并且包括以矩阵布置的像素电路和与像素电路重叠的闪烁体。 像素电路各自包括非常小的截止电流的开关晶体管和被配置为将径向射线转换成电荷的光接收元件。 开关晶体管的栅极绝缘膜具有包括厚度为100nm至400nm的氮化硅膜和厚度为5nm至20nm的氧化硅膜或氮氧化硅膜的叠层结构。

公开(公告)号：US20140306221A1

公开(公告)日：2014-10-16

申请号：US14247676

申请日：2014-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masayuki SAKAKURA ,  Motoki NAKASHIMA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78696

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract translation: 处理使用铜，铝，金，银，钼等形成的布线的步骤的稳定性增加。 此外，半导体膜中的杂质浓度降低。 此外，提高了半导体器件的电特性。 在包括氧化物半导体膜，与氧化物半导体膜接触的氧化物膜和与氧化膜接触并包括铜，铝，金，银，钼等的一对导电膜的晶体管中， 氧化物膜具有多个晶体部分，并且在晶体部分中具有c轴取向，并且c轴在与氧化物半导体膜或氧化物膜的顶表面的法向量平行的方向上排列。

公开(公告)号：US20130320334A1

公开(公告)日：2013-12-05

申请号：US13900894

申请日：2013-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78696

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer.

Abstract translation: 通过防止其电特性的改变来提供包括氧化物半导体的高度可靠的半导体器件。 提供一种半导体器件，其包括与源电极层和漏电极层接触的第一氧化物半导体层和用作晶体管的主电流路径（沟道）的第二氧化物半导体层。 第一氧化物半导体层用作用于防止源电极层和漏极电极层的构成元素扩散到沟道中的缓冲层。 通过设置第一氧化物半导体层，可以防止构成元素扩散到第一氧化物半导体层和第二氧化物半导体层之间的界面中并进入第二氧化物半导体层。

公开(公告)号：US20250160123A1

公开(公告)日：2025-05-15

申请号：US18835069

申请日：2023-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/121 ,  H10K59/12

Abstract: A semiconductor device including a transistor having a minute size is provided. The semiconductor device includes a transistor, a first insulating layer, and a second insulating layer. The transistor includes a first semiconductor layer, a first conductive layer, a second conductive layer including a region overlapping with the first conductive layer with the first insulating layer therebetween, a third conductive layer, and a third insulating layer. The second conductive layer and the first insulating layer have a first opening reaching the first conductive layer. The first semiconductor layer is in contact with a top surface and a side surface of the second conductive layer, a side surface of the first insulating layer, and a top surface of the first conductive layer. The third insulating layer is provided over the first insulating layer, the first semiconductor layer, and the second conductive layer. The third conductive layer is provided over the third insulating layer. The second insulating layer is provided over the third conductive layer and the third insulating layer.

公开(公告)号：US20250113716A1

公开(公告)日：2025-04-03

申请号：US18728173

申请日：2023-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/131 ,  H10K59/12

Abstract: A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a first insulating layer, and a second insulating layer. The first insulating layer is provided over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The semiconductor layer is in contact with a top surface of the first conductive layer, a side surface of the first insulating layer, and a top surface and a side surface of the second conductive layer. The second insulating layer is provided over the semiconductor layer. The third conductive layer is provided over the second insulating layer. The first insulating layer has a stacked-layer structure of a third insulating layer and a fourth insulating layer over the third insulating layer. The fourth insulating layer includes a region having a higher film density than the third insulating layer.

公开(公告)号：US20240170555A1

公开(公告)日：2024-05-23

申请号：US18284681

申请日：2022-04-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yukinori SHIMA ,  Takuya HANDA

IPC: H01L29/49 ,  H01L29/786

CPC classification number: H01L29/4908 ,  H01L29/7869

Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A semiconductor device with high reliability is to be provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first insulating layer, a second insulating layer, and a first gate electrode that are stacked in this order. The first gate electrode includes a region overlapping with the first semiconductor layer. The second transistor includes a second semiconductor layer, a second insulating layer, and a second gate electrode that are stacked in this order. The second gate electrode includes a region overlapping with the second semiconductor layer.