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公开(公告)号：US11430845B2
公开(公告)日：2022-08-30
申请号：US16724624
申请日：2019-12-23
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Mitsuaki Osame , Aya Anzai , Yu Yamazaki , Ryota Fukumoto
IPC: H01L27/32 , G09G3/3233 , G09G3/3291 , H01L27/12 , H04M1/02 , H01L51/52 , G09G3/20 , H01L29/786
Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.
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公开(公告)号：US10373550B2
公开(公告)日：2019-08-06
申请号：US16027892
申请日：2018-07-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
IPC: G09G3/32 , H01L33/00 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291
Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
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公开(公告)号：US20180190745A1
公开(公告)日：2018-07-05
申请号：US15894981
申请日：2018-02-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L27/32 , H01L51/52 , H01L29/786 , H01L27/12
CPC classification number: H01L27/3262 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/3276 , H01L29/78675 , H01L29/78696 , H01L51/52
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
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公开(公告)号：US20170162642A1
公开(公告)日：2017-06-08
申请号：US15433007
申请日：2017-02-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L27/32
CPC classification number: H01L27/3262 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/3276 , H01L29/78675 , H01L29/78696 , H01L51/52
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
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公开(公告)号：US09520410B2
公开(公告)日：2016-12-13
申请号：US14446934
申请日：2014-07-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
IPC: H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L27/12 , H01L27/32 , H01L51/52 , H01L33/60 , H01L51/00 , H01L51/56
CPC classification number: H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
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Patent Agency Ranking
公开(公告)号：US09293477B2
公开(公告)日：2016-03-22
申请号：US14618261
申请日：2015-02-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
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公开(公告)号：US09111842B2
公开(公告)日：2015-08-18
申请号：US14609915
申请日：2015-01-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Aya Anzai , Mitsuaki Osame , Shunpei Yamazaki
CPC classification number: H01L27/156 , G06F1/32 , G06F1/3203 , G06F1/3265 , G09G3/30 , G09G3/3208 , G09G2300/0439 , G09G2320/043 , H01L27/322 , H01L27/3267 , H04M2250/16 , H04W52/027 , Y02D10/153
Abstract: A display device having a first pixel electrode and a second pixel electrode whose areas are different from each other is provided. In the display device, the first pixel electrode and the second pixel electrode are electrically connected to a first transistor and a second transistor, respectively. Gates of the first transistor and the second transistor are electrically connected to each other. A potential is supplied to the first pixel electrode and the second pixel electrode through a wiring electrically connected to the first transistor and the second transistor.
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公开(公告)号：US08988324B2
公开(公告)日：2015-03-24
申请号：US14186600
申请日：2014-02-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
CPC classification number: G09G3/32 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2310/061 , G09G2310/08 , G09G2320/043 , G09G2320/045 , H01L33/0041
Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
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公开(公告)号：US20140171155A1
公开(公告)日：2014-06-19
申请号：US14183679
申请日：2014-02-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki Osame , Aya Anzai , Yu Yamazaki , Ryota Fukumoto
CPC classification number: H01L27/3262 , G09G3/2022 , G09G3/3233 , G09G3/3291 , G09G2300/0426 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2320/0219 , G09G2320/0233 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3276 , H01L29/78675 , H01L51/52 , H01L2251/5323 , H04M1/0266
Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.
Abstract translation: 驱动晶体管的栅极的电位固定，并且驱动晶体管在饱和区域中工作，从而随时提供电流。 在线性区域中工作的电流控制晶体管与驱动晶体管串联布置，并且用于传输像素的发射或非发射信号的视频信号通过开关晶体管输入到电流控制晶体管的栅极。
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公开(公告)号：US10672329B2
公开(公告)日：2020-06-02
申请号：US16530361
申请日：2019-08-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitusaki Osame , Aya Anzai , Yoshifumi Tanada , Keisuke Miyagawa , Satoshi Seo , Shunpei Yamazaki
IPC: G09G3/32 , G09G3/3266 , G09G3/3291 , G09G3/3258 , H01L33/00 , G09G3/3233
Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
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