公开(公告)号：US08629000B2

公开(公告)日：2014-01-14

申请号：US13736344

申请日：2013-01-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Hideyuki Kishida

IPC: H01L21/16 ,  H01L21/84 ,  H01L21/44

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78663 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract translation: 在薄膜晶体管中，防止阈值电压的关断电流的增加或负偏移。 在薄膜晶体管中，在氧化物半导体层与源极电极层和漏极电极层之间设置有缓冲层。 缓冲层包括在氧化物半导体层的中间部分上的绝缘体或半导体的金属氧化物层。 金属氧化物层用作抑制杂质掺入到氧化物半导体层中的保护层。 因此，在薄膜晶体管中，可以防止阈值电压的关断电流的增加或负偏移。

公开(公告)号：US12119408B2

公开(公告)日：2024-10-15

申请号：US18243688

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823475 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78672

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US12062724B2

公开(公告)日：2024-08-13

申请号：US18243691

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823475 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78672

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US11824062B2

公开(公告)日：2023-11-21

申请号：US17313034

申请日：2021-05-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu Kondo ,  Hideyuki Kishida

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45 ,  H10K59/12 ,  H01L29/24 ,  H01L21/02 ,  H10K59/123 ,  H10K59/121 ,  H01L29/49 ,  H01L21/477

CPC classification number: H01L27/1225 ,  H01L21/0262 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/124 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78663 ,  H01L29/78678 ,  H01L29/78693 ,  H10K59/12 ,  H10K59/123 ,  H10K59/1213 ,  H01L21/02554

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

公开(公告)号：US10770596B2

公开(公告)日：2020-09-08

申请号：US16600375

申请日：2019-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L29/786 ,  H01L21/768 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L29/24 ,  H01L29/423

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US10446693B2

公开(公告)日：2019-10-15

申请号：US16053200

申请日：2018-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L29/786 ,  H01L21/768 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L29/24 ,  H01L29/423

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US10141450B2

公开(公告)日：2018-11-27

申请号：US15242802

申请日：2016-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/423 ,  H01L29/49 ,  H01L27/32

Abstract: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

公开(公告)号：US09496414B2

公开(公告)日：2016-11-15

申请号：US15074245

申请日：2016-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US09324878B2

公开(公告)日：2016-04-26

申请号：US14570565

申请日：2014-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US09318617B2

公开(公告)日：2016-04-19

申请号：US14574964

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L21/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/12 ,  H01L21/263 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Abstract translation: 本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。 在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了 针状晶体组是无定形区域或非晶态和微晶体混合的区域。 因此，可以形成具有良好电特性的高可靠性半导体器件。