公开(公告)号：US09605356B2

公开(公告)日：2017-03-28

申请号：US14111597

申请日：2012-04-04

申请人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

发明人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

IPC分类号： C30B13/00 ,  C30B29/06 ,  C01B33/035 ,  C30B35/00 ,  C30B15/00 ,  G01N23/207

CPC分类号： C30B13/00 ,  C01B33/035 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007 ,  G01N23/207

摘要： Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices , , and , the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.

公开(公告)号：US07203559B2

公开(公告)日：2007-04-10

申请号：US10502389

申请日：2003-01-22

申请人： Tatsuo Ito ,  Shigeyoshi Netsu ,  Masashi Ichikawa ,  Nobuhiro Ohara

发明人： Tatsuo Ito ,  Shigeyoshi Netsu ,  Masashi Ichikawa ,  Nobuhiro Ohara

IPC分类号： G06F19/00

CPC分类号： G06Q10/06 ,  G05B19/418 ,  G05B2219/32024 ,  G06Q10/087 ,  Y02P90/02 ,  Y02P90/18

摘要： The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.

摘要翻译： 本发明提供一种制造半导体晶片的方法，包括以下步骤：根据所选择的晶片制造工艺获得器件制造工艺的信息，选择与之对应的晶片制造工艺，以及制造半导体晶片。 本发明还提供了一种用于接收制造半导体晶片的顺序的方法，包括在晶片制造机中将设备制造商与客户计算机连接的步骤，其中客户计算机接收设备制造过程的信息和步骤 选择与之对应的晶片制造工艺，并且提供一种用于接收制造半导体晶圆的系统的系统，该半导体晶片包括在晶片制造商中的设备制造商和客户计算机中的客户终端，其中将器件制造过程的信息输入到 客户终端被发送，客户计算机接收设备制造过程的信息，并且选择与其对应的晶片制造过程。 因此，可以提供一种用于制造半导体晶片的方法，用于接收半导体晶片的制造顺序的方法，以及用于接收其中提供适合于器件制造商中的器件制造工艺的晶片的顺序的系统。

公开(公告)号：US5409770A

公开(公告)日：1995-04-25

申请号：US35608

申请日：1993-03-23

申请人： Shigeyoshi Netsu ,  Kihachiro Watanabe ,  Makoto Tsukada

发明人： Shigeyoshi Netsu ,  Kihachiro Watanabe ,  Makoto Tsukada

IPC分类号： B24B37/04 ,  B24B37/30 ,  H01L21/304 ,  H01L21/00

CPC分类号： B24B37/30 ,  Y10T428/249961 ,  Y10T428/249975 ,  Y10T428/249979

摘要： An elastic foamed sheet is disclosed which is usable as waxless polishing backing pads for wafers and capable of producing mirror polish wafers excelling in flatness.This elastic foamed sheet possesses at least a foamed layer 2 and is characterized by the fact that a plurality of bubbles 4 in the foamed layer 2 meet the following conditions:(1) that the bubbles are slender discrete bubbles erected parallelly to one another and dispersed at a substantially equal pitch in the direction of width of the foamed layer 2 and the bubbles 4 are substantially equal in size, shape, and position of formation in the direction of thickness of the foamed layer 2,(2) that center lines of the bubbles 4 in the direction of length thereof are parallel to the direction of thickness of the foamed layer 2, and(3) that the diameters of the bubbles 4 are minimized in the terminal part of the foamed layer 2 on one surface side thereof and gradually increased in the direction from the one surface side to the other surface side of foamed layer 2 until the bubbles form openings 6 thereof in the surface of the foamed layer 2.

摘要翻译： 公开了一种弹性发泡片，其可用作晶片的无蜡抛光衬垫，并且能够生产出优异的平面度的镜面抛光晶片。 该弹性发泡片材至少具有发泡层2，其特征在于，泡沫层2中的多个气泡4满足以下条件：（1）气泡是彼此平行并分散的细长的离散气泡 在发泡层2的宽度方向上基本相等的间距和气泡4在发泡层2的厚度方向上的尺寸，形状和形成位置基本相等，（2）中心线 在其长度方向上的气泡4与发泡层2的厚度方向平行，（3）在发泡层2的一个表面侧的末端部分中气泡4的直径最小化， 在发泡层2的一个表面侧到另一个表面侧的方向上增加，直到泡沫在发泡层2的表面中形成开口6。

公开(公告)号：US20130302528A1

公开(公告)日：2013-11-14

申请号：US13979789

申请日：2011-09-20

申请人： Yasushi Kurosawa ,  Shigeyoshi Netsu

发明人： Yasushi Kurosawa ,  Shigeyoshi Netsu

IPC分类号： C23C16/24

CPC分类号： C23C16/45563 ,  C01B33/035 ,  C23C16/24

摘要： Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.

摘要翻译： 原料气体供给喷嘴配置在其中心位于盘状基板的中心的虚拟同心圆（面积为基板的面积的一半以上）。 原料气体以150m / sec以上的流速从气体供给喷嘴喷射到钟罩中。 除了设置在基板的中心部分中的一个气体供应喷嘴之外，三个气体供应喷嘴可以布置在其中心部分处于气体供应喷嘴的中心的外接圆的正三角形的顶点位置处。 在气体供给喷嘴如此布置的情况下，在反应器内形成平滑的循环流。

公开(公告)号：US07582221B2

公开(公告)日：2009-09-01

申请号：US10181829

申请日：2001-10-22

申请人： Shigeyoshi Netsu ,  Hisashi Masumura

发明人： Shigeyoshi Netsu ,  Hisashi Masumura

IPC分类号： C03C15/00 ,  H01L21/302

CPC分类号： H01L21/02024 ,  B24B37/345

摘要： The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process for making a mirror surface of the wafer, a back surface of the wafer is polished to produce a reference plane thereof.

摘要翻译： 本发明提供一种晶片制造方法和晶片抛光装置，其能够控制晶片周边的下垂和最近需要强烈要求的纳米拓扑学值的改善以及晶片。 在用于制造晶片的镜面的抛光工艺中，抛光晶片的后表面以产生其参考平面。

公开(公告)号：US5538465A

公开(公告)日：1996-07-23

申请号：US369653

申请日：1995-01-06

申请人： Shigeyoshi Netsu ,  Kihachiro Watanabe ,  Makoto Tsukada

发明人： Shigeyoshi Netsu ,  Kihachiro Watanabe ,  Makoto Tsukada

IPC分类号： B24B37/04 ,  B24B37/30 ,  H01L21/304 ,  B24B7/04

CPC分类号： B24B37/30 ,  Y10T428/249961 ,  Y10T428/249975 ,  Y10T428/249979

摘要： An elastic foamed sheet is disclosed which is usable as waxless polishing backing pads for wafers and capable of producing mirror polish wafers excelling in flatness.This elastic foamed sheet possesses at least a foamed layer 2 and is characterized by the fact that a plurality of bubbles 4 in the foamed layer 2 meet the following conditions:(1) that the bubbles are slender discrete bubbles erected parallelly to one another and dispersed at a substantially equal pitch in the direction of width of the foamed layer 2 and the bubbles 4 are substantially equal in size, shape, and position of formation in the direction of thickness of the foamed layer 2,(2) that center lines of the bubbles 4 in the direction of length thereof are parallel to the direction of thickness of the foamed layer 2, and(3) that the diameters of the bubbles 4 are minimized in the terminal part of the foamed layer 2 on one surface side thereof and gradually increased in the direction from the one surface side to the other surface side of foamed layer 2 until the bubbles form openings 6 thereof in the surface of the foamed layer 2.

公开(公告)号：US09416444B2

公开(公告)日：2016-08-16

申请号：US13979789

申请日：2011-09-20

申请人： Yasushi Kurosawa ,  Shigeyoshi Netsu

发明人： Yasushi Kurosawa ,  Shigeyoshi Netsu

IPC分类号： C23C16/00 ,  C23C16/24 ,  C01B33/035 ,  C23C16/455

CPC分类号： C23C16/45563 ,  C01B33/035 ,  C23C16/24

摘要： Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.

摘要翻译： 原料气体供给喷嘴配置在其中心位于盘状基板的中心的虚拟同心圆（面积为基板的面积的一半以上）。 原料气体以150m / sec以上的流速从气体供给喷嘴喷射到钟罩中。 除了设置在基板的中心部分中的一个气体供应喷嘴之外，三个气体供应喷嘴可以布置在其中心部分处于气体供应喷嘴的中心的外接圆的正三角形的顶点位置处。 在气体供给喷嘴如此布置的情况下，在反应器内形成平滑的循环流。

公开(公告)号：US20140033966A1

公开(公告)日：2014-02-06

申请号：US14111597

申请日：2012-04-04

申请人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

发明人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

IPC分类号： C30B13/00 ,  G01N23/207 ,  C30B15/00

CPC分类号： C30B13/00 ,  C01B33/035 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007 ,  G01N23/207

摘要： Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices , , and , the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.

摘要翻译： 对采用化学气相沉积法沉积生长的多晶硅棒的垂直于长轴方向的截面为主面的板状样品进行取样; 在如此采样的每个板状样品的平面中全方位地进行X射线衍射测量; 并且当板状样品没有任何X射线衍射峰的衍射强度偏离了对于Miller指数<111>，<220>中的任何一个的平均值±2×标准偏差（μ±2sigma）时， ，<311>和<400>，选择多晶硅棒作为单晶硅生产中使用的原料。 使用这种多晶硅原料抑制局部发生未熔化的部分，有助于稳定生产单晶硅。

公开(公告)号：US20140030440A1

公开(公告)日：2014-01-30

申请号：US14110959

申请日：2012-04-16

申请人： Shigeyoshi Netsu ,  Yasushi Kurosawa

发明人： Shigeyoshi Netsu ,  Yasushi Kurosawa

IPC分类号： C01B33/035

CPC分类号： C01B33/035

摘要： A core wire holder 20 is formed with a core wire insert hole 21 having an opening part 22 on an upper surface of a main body and extending toward a lower surface side, and a silicon core wire 5 is inserted into the core wire insert hole 21. In addition, a slit-like gap part 60 extending along a virtual plane P including a central axis C of the core wire insert hole 21 is formed, and the slit-like gap part 60 is a gap part extending from the core wire insert hole 21 to reach an outer surface of the main body of the holder 20. The silicon core wire 5 inserted in the core wire insert hole 21 is fixed by fastening an upper part of the main body of the holder 20 from sides with, for example, a bolt/nut type fixing member 31.

摘要翻译： 芯线保持器20形成有芯线插入孔21，该芯线插入孔21在主体的上表面上具有开口部22并向下表面侧延伸，硅芯线5插入到芯线插入孔21中 此外，形成有沿着包括芯线插入孔21的中心轴线C的虚拟平面P延伸的狭缝状间隙部60，狭缝状间隙部60是从芯线插入物延伸的间隙部 孔21到达保持器20的主体的外表面。插入芯线插入孔21中的硅芯线5通过例如从侧面紧固保持器20的主体的上部而被固定 螺栓/螺母型固定部件31。

公开(公告)号：US06787797B2

公开(公告)日：2004-09-07

申请号：US10019056

申请日：2002-04-22

申请人： Kiyoshi Demizu ,  Tadahiro Kato ,  Shigeyoshi Netsu

发明人： Kiyoshi Demizu ,  Tadahiro Kato ,  Shigeyoshi Netsu

IPC分类号： H01L2358

CPC分类号： H01L21/6875 ,  H01L21/6835 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01088 ,  H01L2924/30105

摘要： In order to improve the productivity or production yield of chips in the process for device fabrication, the present invention provides a wafer or an apparatus of process for fabricating semiconductor devices having the backside of the wafer or the surface of a wafer holding means adjusted so as to have a distribution in contact surface density between the surface of the wafer holding means and the backside of the wafer when the semiconductor wafer is held on the wafer holding means in the process for fabricating devices.

摘要翻译： 为了在设备制造过程中提高芯片的生产率或生产成本，本发明提供一种用于制造半导体器件的工艺的晶片或装置，该半导体器件具有晶片的背面或晶片保持装置的表面被调整为 在晶片保持装置的表面和晶片的背面之间具有接触表面密度的分布，当半导体晶片在制造器件的制造工艺中被保持在晶片保持装置上时。