公开(公告)号：US20230134822A1

公开(公告)日：2023-05-04

申请号：US17948509

申请日：2022-09-20

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Masaki Ohashi ,  Kazuhiro Katayama

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C07D307/93 ,  C07D209/56 ,  C07D327/04 ,  C07D275/06 ,  C07D307/33 ,  C08F220/18 ,  C08F220/38

Abstract: A resist composition comprising a quencher in the form of an amine compound having a highly polar lactone or sultone ring and an acid labile group in a common molecule is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

公开(公告)号：US11435666B2

公开(公告)日：2022-09-06

申请号：US16669780

申请日：2019-10-31

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Emiko Ono ,  Masayoshi Sagehashi ,  Masahiro Fukushima ,  Yuki Kera

IPC: G03F7/004 ,  G03F7/038 ,  C07D307/77 ,  C07C381/12 ,  C07C309/12 ,  C07D311/00 ,  C07D333/76 ,  C07D333/08 ,  C07D327/06 ,  C08F220/18 ,  G03F7/039 ,  G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38

Abstract: A novel salt having an amide bond in its anion structure is provided. A chemically amplified resist composition comprising the salt has advantages including minimal defects and improved values of sensitivity, LWR, MEF and CDU, when processed by lithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, EB or EUV.

公开(公告)号：US20210116808A1

公开(公告)日：2021-04-22

申请号：US17062048

申请日：2020-10-02

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Masahiro Fukushima

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14

Abstract: A positive resist composition comprising a base polymer comprising recurring units (a) containing an imide group having an iodized aromatic group bonded thereto and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and size variation.

公开(公告)号：US20200369605A1

公开(公告)日：2020-11-26

申请号：US16858160

申请日：2020-04-24

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masayoshi Sagehashi ,  Takayuki Fujiwara ,  Masahiro Fukushima ,  Masaki Ohashi ,  Kazuhiro Katayama

IPC: C07C317/06 ,  G03F7/029 ,  G03F7/038 ,  G03F7/039 ,  G03F7/004 ,  G03F7/32

Abstract: An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

公开(公告)号：US20190235381A1

公开(公告)日：2019-08-01

申请号：US16380093

申请日：2019-04-10

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Masayoshi Sagehashi ,  Koji Hasegawa ,  Jun Hatakeyama ,  Kazuhiro Katayama

IPC: G03F7/038 ,  G03F7/32 ,  C08F220/68 ,  G03F7/004 ,  C07D493/18 ,  C07D493/08 ,  C07D307/93 ,  G03F7/16 ,  G03F7/20 ,  C09D133/16 ,  C08F220/28 ,  C07C69/653

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizabie group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon, group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

公开(公告)号：US09604921B2

公开(公告)日：2017-03-28

申请号：US14861303

申请日：2015-09-22

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Daisuke Domon ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Masahiro Fukushima

IPC: G03F7/039 ,  G03F1/76 ,  G03F7/20 ,  C07C305/24 ,  G03F7/004 ,  G03F7/038 ,  G03F7/32 ,  C07C381/12 ,  C07D327/08 ,  C07C309/42 ,  C07D333/76 ,  C07C309/73 ,  C07D335/12 ,  C07D335/16 ,  C07D339/08 ,  C07D493/08 ,  C07D279/20

CPC classification number: C07C305/24 ,  C07C309/42 ,  C07C309/73 ,  C07C381/12 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2601/20 ,  C07C2603/74 ,  C07D279/20 ,  C07D327/08 ,  C07D333/76 ,  C07D335/12 ,  C07D335/16 ,  C07D339/08 ,  C07D493/08 ,  G03F1/76 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/322

Abstract: A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0≦k≦5+4m, R101, R102 and R103 are a monovalent hydrocarbon group, or at least two of R101, R102 and R103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

公开(公告)号：US20160238930A1

公开(公告)日：2016-08-18

申请号：US15041498

申请日：2016-02-11

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Koji Hasegawa ,  Masayoshi Sagehashi ,  Masahiro Fukushima ,  Ryosuke Taniguchi

IPC: G03F7/038 ,  C07D493/18 ,  G03F7/32 ,  C08F228/06 ,  G03F7/039 ,  C07D307/93 ,  C08F224/00

CPC classification number: G03F7/038 ,  C07D307/04 ,  C07D307/93 ,  C07D493/18 ,  C08F224/00 ,  C08F228/06 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/322 ,  G03F7/325

Abstract: A polymer for resist use is obtainable from a hemiacetal compound having formula (1a) wherein R1 is H, CH3 or CF3, R2 to R4 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k1=0 or 1, and k2=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

Abstract translation: 用于抗蚀剂的聚合物可从具有式（1a）的式（1a）的半缩醛化合物获得，其中R 1为H，CH 3或CF 3，R 2至R 4各自为H或一价烃基，X 1为二价烃基，Z Z表示非芳族 具有半缩醛结构，具有半缩醛结构，k1 = 0或1，k2 = 0至3的4至20个碳原子的单环或多环。包含该聚合物的抗蚀剂组合物在正和负色调发展期间显示控制的酸扩散和低粗糙度。

公开(公告)号：US20140322650A1

公开(公告)日：2014-10-30

申请号：US14249396

申请日：2014-04-10

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Masaki Ohashi ,  Masahiro Fukushima ,  Tomohiro Kobayashi ,  Kazuhiro Katayama ,  Chuanwen Lin

IPC: G03F7/038

CPC classification number: G03F7/038 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 is H, F, CH3 or CF3, Z is a single bond, phenylene, naphthylene, or (backbone)-C(═O)—O—Z′—, Z′ is alkylene, phenylene or naphthylene, XA is an acid labile group, YL is H or a polar group. In formula (3), R2 and R3 are a monovalent hydrocarbon group, R4 is a divalent hydrocarbon group, or R2 and R3, or R2 and R4 may form a ring with the sulfur, L is a single bond or a divalent hydrocarbon group, Xa and Xb are H, F or CF3, and k is an integer of 1 to 4.

Abstract translation: 通过将包含式（1）和（2）的重复单元的聚合物的抗蚀剂组合物和式（3）的光致酸产生剂涂覆在基材上，烘烤，曝光，PEB和在有机溶剂中显影来形成负型图案。 在式（1）和（2）中，R1是H，F，CH3或CF3，Z是单键，亚苯基，亚萘基或（主链）-C（= O）-O-Z'-，Z' 亚烷基，亚苯基或亚萘基，XA是酸不稳定基团，YL是H或极性基团。 在式（3）中，R 2和R 3是一价烃基，R 4是二价烃基，或R 2和R 3，或者R 2和R 4可以与硫形成环，L是单键或二价烃基， Xa和Xb为H，F或CF3，k为1〜4的整数。

公开(公告)号：US20140272707A1

公开(公告)日：2014-09-18

申请号：US14172355

申请日：2014-02-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Jun Hatakeyama ,  Masaki Ohashi ,  Teppei Adachi

IPC: G03F7/039 ,  G03F7/20

CPC classification number: G03F7/0397 ,  C08F220/24 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041

Abstract: A sulfonium salt having formula (1a) is provided wherein R1 is H, F, CH3 or CF3, R1a to R1m are each independently H or a monovalent hydrocarbon group, L is a single bond or divalent hydrocarbon group, X is a divalent alkylene group optionally substituted with fluorine, and n is 0 or 1. The sulfonium salt having a polymerizable anion provides for efficient scission of acid labile groups in a chemically amplified resist composition, and it is a very useful monomer from which a base resin for resist use is prepared.

Abstract translation: 提供具有式（1a）的锍盐，其中R 1为H，F，CH 3或CF 3，R 1a至R 1a各自独立地为H或一价烃基，L为单键或二价烃基，X为二价亚烷基 任选被氟取代，并且n为0或1.具有可聚合阴离子的锍盐提供化学放大抗蚀剂组合物中酸不稳定基团的有效断裂，并且它是一种非常有用的单体，抗蚀剂使用的基础树脂是 准备

公开(公告)号：US20250060669A1

公开(公告)日：2025-02-20

申请号：US18783543

申请日：2024-07-25

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Masahiro Fukushima

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/18

Abstract: The resist composition exhibits a high sensitivity, reduced LWR, and improved CDU. The resist composition can form a pattern by using the resist composition. The resist composition comprises a base polymer of sulfonium salt structure having a trifluoromethoxybenzenesulfonamide, difluoromethoxybenzenesulfonamide, trifluoromethoxybenzenesulfonimide or difluoromethoxybenzenesulfonimide anion bonded to its backbone offers a high sensitivity, reduced LWR and improved CDU.