公开(公告)号：US10044918B2

公开(公告)日：2018-08-07

申请号：US15720993

申请日：2017-09-29

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  H04N5/369 ,  H01L27/146 ,  H01L31/0232 ,  G02B1/118

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US09819846B2

公开(公告)日：2017-11-14

申请号：US14891947

申请日：2014-06-20

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/11 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/369 ,  G02B1/118

CPC classification number: H04N5/2254 ,  G02B1/118 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/02327 ,  H01L31/10 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3696 ,  H04N5/374 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US09502459B2

公开(公告)日：2016-11-22

申请号：US14313462

申请日：2014-06-24

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/357 ,  H04N5/374

Abstract: An image pickup device includes: a photodiode provided in a silicon substrate, and configured to generate electric charge corresponding to an amount of received light, by performing photoelectric conversion; and a transfer transistor provided at an epitaxial layer on the silicon substrate, and configured to transfer the electric charge generated in the photodiode, wherein the transfer transistor includes a gate electrode and a channel region, the gate electrode being embedded in the epitaxial layer, and the channel region surrounding the gate electrode, and the channel region has, in a thickness direction, a concentration gradient in which a curvature of a potential gradient is free from a mixture of plus and minus signs.

Abstract translation: 一种图像拾取装置，包括：设置在硅衬底中的光电二极管，其被配置为通过进行光电转换来产生与所接收的光量相对应的电荷; 以及转移晶体管，设置在所述硅衬底上的外延层处，并且被配置为转移在所述光电二极管中产生的电荷，其中所述转移晶体管包括栅电极和沟道区，所述栅电极被嵌入所述外延层中，以及 围绕栅电极的沟道区域和沟道区域在厚度方向上具有其中电位梯度的曲率没有加号和负号的混合的浓度梯度。

公开(公告)号：US20160211374A1

公开(公告)日：2016-07-21

申请号：US15080654

申请日：2016-03-25

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L29/78 ,  H01L29/423

CPC classification number: H01L29/7848 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3185 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes: a sidewall insulating film; a gate electrode; source and drain regions; a first stress film; and a second stress film.

公开(公告)号：US20150028442A1

公开(公告)日：2015-01-29

申请号：US14372413

申请日：2013-01-11

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing.A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

公开(公告)号：US11277578B2

公开(公告)日：2022-03-15

申请号：US17088133

申请日：2020-11-03

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US11217612B2

公开(公告)日：2022-01-04

申请号：US16683379

申请日：2019-11-14

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Kentaro Akiyama ,  Yorito Sakano ,  Takashi Oinoue ,  Yoshiya Hagimoto ,  Yusuke Matsumura ,  Naoyuki Sato ,  Yuki Miyanami ,  Yoichi Ueda ,  Ryosuke Matsumoto

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/355 ,  H04N5/3745 ,  H01L27/02 ,  H04N5/374 ,  H04N5/217 ,  H04N5/235 ,  H04N5/367 ,  H04N5/378

Abstract: The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

公开(公告)号：US11076078B2

公开(公告)日：2021-07-27

申请号：US16885734

申请日：2020-05-28

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H04N5/369 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US11031427B2

公开(公告)日：2021-06-08

申请号：US16841384

申请日：2020-04-06

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N9/083

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

公开(公告)号：US20190221593A1

公开(公告)日：2019-07-18

申请号：US16366835

申请日：2019-03-27

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N9/083 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/083

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.