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公开(公告)号：US20170002208A1
公开(公告)日：2017-01-05
申请号：US14788321
申请日：2015-06-30
Inventor： Ya-Ling Cheng , Ching-Yu Chang
CPC classification number: C09D5/002 , C09D7/20 , G03F7/162 , H01L21/0271 , H01L21/6715
Abstract: A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and applying a priming material to the substrate. The applying of the priming material may include rotating the substrate to disperse the priming material radially on the substrate. In the embodiment, the priming material includes a solvent with at least six carbon atoms per molecule. A film-forming material is applied to the substrate on the priming material, and the application includes rotating the substrate to disperse the film-forming material radially on the substrate. The priming material and the film-forming material are evaporated to leave a component of the film-forming material in a solid form. In various embodiments, the priming material is selected based on at least one of an evaporation rate, a viscosity, or an intermolecular force between the priming material and the film-forming material.
Abstract translation: 提供涂覆技术和起泡材料。 在示例性实施例中，涂覆技术包括接收基底并将底涂材料施加到基底上。 引发材料的施加可以包括旋转基底以将引发材料径向分散在基底上。 在该实施方案中，引发材料包括每分子具有至少六个碳原子的溶剂。 将成膜材料施加到起动材料上的基板上，并且应用包括旋转基板以将成膜材料径向分散在基板上。 将起动材料和成膜材料蒸发以形成固体形式的成膜材料的成分。 在各种实施方案中，基于起泡材料和成膜材料之间的蒸发速率，粘度或分子间力中的至少一种来选择起泡材料。
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公开(公告)号：US20160379874A1
公开(公告)日：2016-12-29
申请号：US14752097
申请日：2015-06-26
Inventor： Bo-Jiun Lin , Ching-Yu Chang , Hai-Ching Chen , Tien-I Bao
IPC: H01L21/768 , H01L23/532 , H01L21/02
CPC classification number: H01L21/76837 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/7682 , H01L23/5329 , H01L2221/1047
Abstract: A method for semiconductor manufacturing includes receiving a device that includes a substrate and a first layer disposed over the substrate, wherein the first layer includes a trench. The method further includes applying a first material over the first layer and filling in the trench, wherein the first material contains a matrix and a porogen that is chemically bonded with the matrix. The method further includes curing the first material to form a porous material layer. The porous material layer has a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed over the first layer. The first and second portions contain substantially the same percentage of each of Si, O, and C. The first and second portions contain substantially the same level of porosity.
Abstract translation: 一种用于半导体制造的方法，包括接收包括衬底和设置在衬底上的第一层的器件，其中第一层包括沟槽。 所述方法还包括在所述第一层上施加第一材料并填充所述沟槽，其中所述第一材料包含与所述基质化学键合的基质和致孔剂。 该方法还包括固化第一材料以形成多孔材料层。 多孔材料层具有第一部分和第二部分。 第一部分设置在沟槽中。 第二部分设置在第一层上。 第一和第二部分含有基本相同的Si，O和C的百分比。第一和第二部分含有基本相同的孔隙率。
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23.发明申请NOVEL PHOTORESIST ADDITIVE FOR OUTGASSING REDUCTION AND OUT-OF-BAND RADIATION ABSORPTION 有权用于减少排气和带外辐射吸收的新型光电辅助添加剂公开(公告)号：US20160238934A1
公开(公告)日：2016-08-18
申请号：US14876879
申请日：2015-10-07
Inventor： Wei-Han Lai , Ching-Yu Chang , Chien-Wei Wang
CPC classification number: G03F7/091 , B05D3/007 , C08F18/04 , C08F220/22 , G03F7/0046 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/16 , G03F7/2041 , H01L21/0271 , H01L21/0274 , H01L21/0276 , H01L21/033
Abstract: A patternable layer is formed over a substrate. A photo-sensitive layer is formed over the patternable layer. The photo-sensitive layer contains an additive. The additive contains at least a floating control chemical and a volume control chemical. A spin drying or a baking process is performed to the photo-sensitive layer. The floating control chemical causes the additive to rise upward during the spin drying or baking process. Thereafter, as a part of an extreme ultraviolet (EUV) lithography process, the photo-sensitive layer is exposed. One or more outgassing chemicals are generated inside the photo-sensitive layer during the exposing. The volume control chemical is sufficiently voluminous and dense to trap the outgassing chemicals inside the photo-sensitive layer.
Abstract translation: 在衬底上形成图案化层。 在可图案层上形成光敏层。 光敏层含有添加剂。 该添加剂至少含有一种浮动控制化学品和一种体积控制化学品。 对感光层进行旋转干燥或烘烤处理。 在旋转干燥或烘烤过程中，浮动控制化学品导致添加剂向上升。 此后，作为极紫外（EUV）光刻工艺的一部分，曝光光敏层。 在曝光期间，光敏层内产生一种或多种除气化学品。 体积控制化学物质足够体积和致密以捕获光敏层内的除气化学物质。
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公开(公告)号：US20160238933A1
公开(公告)日：2016-08-18
申请号：US14621512
申请日：2015-02-13
Inventor： Yu-Chung Su , Ching-Yu Chang
IPC: G03F7/09 , H01L21/265 , H01L21/027 , G03F7/004 , C09D5/00
CPC classification number: G03F7/091 , C09D5/006 , G03F7/038 , G03F7/0382 , G03F7/0392 , G03F7/322 , G03F7/325 , G03F7/36 , H01L21/0276 , H01L21/3081
Abstract: An anti-reflective coating (ARC) composition for use in lithography patterning and a method of using the same is disclosed. In an embodiment, the ARC composition comprises a polymer having a chromophore; an acid labile group (ALG), more than 5% by weight; a thermal acid generator; and an optional crosslinker. The method includes applying the ARC composition over a substrate; crosslinking the polymer to form an ARC layer; cleaving the ALG of the ARC layer to reduce a film density of the ARC layer; forming a resist layer over the ARC layer, patterning the resist layer, and etching the ARC layer. Due to reduced film density, the ARC layer has a high etching rate, thereby preserving the critical dimension (CD) of the resist pattern during the etching process.
Abstract translation: 公开了用于光刻图案化的抗反射涂层（ARC）组合物及其使用方法。 在一个实施方案中，ARC组合物包含具有发色团的聚合物; 酸不稳定组（ALG）超过5％（重量）; 热酸发生器; 和可选的交联剂。 该方法包括将ARC组合物涂覆在衬底上; 交联聚合物形成ARC层; 切割ARC层的ALG以降低ARC层的膜密度; 在ARC层上形成抗蚀剂层，图案化抗蚀剂层，并蚀刻ARC层。 由于膜密度降低，ARC层具有高蚀刻速率，从而在蚀刻工艺期间保留了抗蚀剂图案的临界尺寸（CD）。
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25.发明申请公开(公告)号：US20160190002A1
公开(公告)日：2016-06-30
申请号：US14583514
申请日：2014-12-26
Inventor： Bo-Jiun Lin , Ching-Yu Chang , Hai-Ching Chen , Tien-I Bao
IPC: H01L21/768 , H01B3/20 , H01L21/02
CPC classification number: H01L21/76837 , H01B3/20 , H01L21/02118 , H01L21/02211 , H01L21/02214 , H01L21/02282 , H01L21/76802 , H01L21/76834 , H01L21/76852 , H01L21/76877 , H01L21/76885 , H01L23/53233 , H01L23/5329
Abstract: A method for forming an interconnect structure includes forming a patterned layer over a substrate, the patterned layer having an opening therein. A dielectric material is filled in the opening. The dielectric material has a precursor and a solvent, the solvent having a boiling point temperature greater than a precursor cross-linking temperature. A thermal treatment is performed on the dielectric material to form a dielectric layer.
Abstract translation: 用于形成互连结构的方法包括在衬底上形成图案化层，所述图案化层在其中具有开口。 介电材料填充在开口中。 介电材料具有前体和溶剂，溶剂的沸点温度大于前体交联温度。 对电介质材料进行热处理以形成电介质层。
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Patent Agency Ranking
公开(公告)号：US20160155632A1
公开(公告)日：2016-06-02
申请号：US15005435
申请日：2016-01-25
Inventor： Yu-Chung Su , Ching-Yu Chang , Wen-Yun Wang
IPC: H01L21/027 , H01L21/311
CPC classification number: G03F7/11 , C08F220/18 , C08F220/22 , G03F7/091 , G03F7/40 , H01L21/02343 , H01L21/02359 , H01L21/0276 , H01L21/31111
Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom.
Abstract translation: 提供了一种用于抗反射层的系统和方法。 在一个实施例中，抗反射层包括浮动部件，以在抗反射层分散之后沿着抗反射层的顶表面形成浮动区域。 漂浮的组分可以是漂浮的交联剂，漂浮的聚合物树脂或漂浮的催化剂。 浮动交联剂，漂浮聚合物树脂或浮动催化剂可以包含氟原子。
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公开(公告)号：US09239520B2
公开(公告)日：2016-01-19
申请号：US14697252
申请日：2015-04-27
Inventor： Wen-Yun Wang , Ching-Yu Chang
Abstract: A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.
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公开(公告)号：US20150187565A1
公开(公告)日：2015-07-02
申请号：US14457902
申请日：2014-08-12
Inventor： Yu-Chung Su , Ching-Yu Chang
IPC: H01L21/027 , H01L21/02
CPC classification number: H01L21/0276 , G03F7/091 , H01L21/02118
Abstract: In accordance with an embodiment a bottom anti-reflective layer comprises a surface energy modification group which modifies the surface energy of the polymer resin to more closely match a surface energy of an underlying material in order to help fill gaps between structures. The surface energy of the polymer resin may be modified by either using a surface energy modifying group or else by using an inorganic structure.
Abstract translation: 根据一个实施方案，底部抗反射层包括表面能改变基团，其改变聚合物树脂的表面能以更紧密地匹配下面的材料的表面能，以帮助填充结构之间的间隙。 可以通过使用表面能改性基团或者通过使用无机结构来改性聚合物树脂的表面能。
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公开(公告)号：US20150160558A1
公开(公告)日：2015-06-11
申请号：US14452263
申请日：2014-08-05
Inventor： Kuan-Hsin Lo , Ching-Yu Chang
IPC: G03F7/30 , H01L21/308
CPC classification number: G03F7/30 , H01L21/3081
Abstract: In accordance with an embodiment, a method of filtering a process fluid such as a negative tone developer is provided. The negative tone developer is introduced to a filter membrane that comprises a fluorine-based polymer. The negative tone developer is then filtered through the filter membrane. By using these materials and methods, polyethylene from the filter membrane will not contaminate the photoresist during development and reduce defects that arise from polyethylene contamination.
Abstract translation: 根据一个实施例，提供了一种过滤流体的方法，例如负色调显影剂。 将负色调显影剂引入到包含氟基聚合物的滤膜上。 然后将负色调显影剂通过滤膜过滤。 通过使用这些材料和方法，来自过滤膜的聚乙烯在显影期间不会污染光致抗蚀剂并且减少由聚乙烯污染引起的缺陷。
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公开(公告)号：US20150132701A1
公开(公告)日：2015-05-14
申请号：US14075871
申请日：2013-11-08
Inventor： Chen-Hau Wu , Ching-Yu Chang
IPC: G03F7/038
CPC classification number: G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041
Abstract: A photoresist includes a group which will decompose that is attached to a hydrocarbon backbone at multiple points along the hydrocarbon chain. With such an attachment, the group which will decompose will cleave from one point in order to generate a desired shift in polarity while still remaining bonded to the hydrocarbon backbone. This prevents the group which will decompose from leaving the photoresist, thereby reducing or eliminating volume losses associated with exposure and post-exposure baking.
Abstract translation: 光致抗蚀剂包括在沿着烃链的多个点处分解连接到烃主链上的基团。 通过这样的附着，将分解的基团将从一个点切割，以产生极性的期望偏移，同时仍然保持键合到烃骨架上。 这样可以防止分解离开光致抗蚀剂的组，从而减少或消除与曝光和曝光后烘烤相关的体积损失。
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