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公开(公告)号：US20210053184A1
公开(公告)日：2021-02-25
申请号：US16550061
申请日：2019-08-23
Inventor： Tung-Kai Chen , Shang-Yu Wang , Wan-Chun Pan , Zink Wei , Hui-Chi Huang , Kei-Wei Chen
IPC: B24B49/12 , G01N21/64 , B24B37/12 , B24B37/20 , B24B53/017
Abstract: A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.
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公开(公告)号：US20200043784A1
公开(公告)日：2020-02-06
申请号：US16246125
申请日：2019-01-11
Inventor： Hsin-Ying Ho , Fang-I Chih , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/768
Abstract: A multiple metallization scheme in conductive features of a device uses ion implantation in a first metal layer to make a portion of the first metal layer soluble to a wet cleaning agent. The soluble portion may then be removed by a wet cleaning process and a subsequent second metal layer deposited over the first metal layer. An additional layer may be formed by a second ion implantation in the second metal layer may be used to make a controllable portion of the second metal layer soluble to a wet cleaning agent. The soluble portion of the second metal layer may be removed by a wet cleaning process. The process of depositing metal layers, implanting ions, and removing soluble portions, may be repeated until a desired number of metal layers are provided.
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公开(公告)号：US09966281B2
公开(公告)日：2018-05-08
申请号：US14081693
申请日：2013-11-15
Inventor： Chien-Ping Lee , Hui-Chi Huang
CPC classification number: H01L21/67051 , B24B37/34 , H01L21/02071 , H01L21/67028 , H01L21/67046
Abstract: The present disclosure provides a cleaning unit for a chemical mechanical polishing (CMP) process. The cleaning unit comprises a cleaning solution; a brush configured to scrub a wafer during the CMP process; and a spray nozzle configured to apply the cleaning solution to the wafer when the brush scrubs the wafer during the CMP process. In some embodiments, the spray nozzle includes an inlet where the cleaning solution enters the spray nozzle and an outlet where the cleaning solution exits the spray nozzle. In some embodiments, an inlet area (A0) is different from an outlet area (A1).
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公开(公告)号：US20170194217A1
公开(公告)日：2017-07-06
申请号：US14986905
申请日：2016-01-04
Inventor： Yu-Ting Yen , Chi-Ming Tsai , Hui-Chi Huang
IPC: H01L21/66 , H01L21/02 , G01N21/3563 , G01N15/14 , G01N21/47 , G01N21/59 , G01N27/61 , H01L21/306 , G01N21/65
CPC classification number: H01L22/12 , G01N15/0211 , G01N15/1459 , G01N21/3563 , G01N21/53 , G01N21/55 , G01N21/59 , G01N21/65 , G01N21/94 , G01N21/9501 , G01N2015/0053 , G01N2015/0222 , G01N2015/1486 , G01N2015/1493 , G01N2021/3568 , G01N2021/3595 , H01L21/02057 , H01L21/02065 , H01L21/02074 , H01L21/30625
Abstract: A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.
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公开(公告)号：US20150140818A1
公开(公告)日：2015-05-21
申请号：US14081693
申请日：2013-11-15
Inventor： Chien-Ping Lee , Hui-Chi Huang
CPC classification number: H01L21/67051 , B24B37/34 , H01L21/02071 , H01L21/67028 , H01L21/67046
Abstract: The present disclosure provides a cleaning unit for a chemical mechanical polishing (CMP) process. The cleaning unit comprises a cleaning solution; a brush configured to scrub a wafer during the CMP process; and a spray nozzle configured to apply the cleaning solution to the wafer when the brush scrubs the wafer during the CMP process. In some embodiments, the spray nozzle includes an inlet where the cleaning solution enters the spray nozzle and an outlet where the cleaning solution exits the spray nozzle. In some embodiments, an inlet area (A0) is different from an outlet area (A1).
Abstract translation: 本公开提供了用于化学机械抛光（CMP）工艺的清洁单元。 清洁单元包括清洁溶液; 构造成在CMP工艺期间擦洗晶片的刷子; 以及喷涂喷嘴，其构造成当在CMP处理期间刷子磨擦晶片时将清洁溶液施加到晶片。 在一些实施例中，喷雾喷嘴包括其中清洁溶液进入喷嘴的入口和清洁溶液离开喷嘴的出口。 在一些实施例中，入口区域（A0）不同于出口区域（A1）。
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Patent Agency Ranking
公开(公告)号：US12297375B2
公开(公告)日：2025-05-13
申请号：US17141988
申请日：2021-01-05
Inventor： Ji Cui , Chi-Jen Liu , Liang-Guang Chen , Kei-Wei Chen , Chun-Wei Hsu , Li-Chieh Wu , Peng-Chung Jangjian , Kao-Feng Liao , Fu-Ming Huang , Wei-Wei Liang , Tang-Kuei Chang , Hui-Chi Huang
IPC: C09G1/02 , H01L21/321 , H01L21/768 , H01L23/535
Abstract: A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one rheology modifier. The slurry includes at least one liquid carrier, at least one abrasives and at least one oxidizer. The rheology modifier is dispensed in the slurry. The polishing method includes using the slurry composition with the rheology modifier to polish a conductive layer.
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公开(公告)号：US20240395537A1
公开(公告)日：2024-11-28
申请号：US18324550
申请日：2023-05-26
Inventor： Chi-hsiang Shen , Jeng-Chi Lin , Te-Chien Hou , Che-Hao Tu , Tang-Kuei Chang , Kei-Wei Chen , Hui-Chi Huang
IPC: H01L21/02 , H01L21/67 , H01L21/687
Abstract: Provided are a tool and a method for processing a semiconductor wafer. A processing method includes supporting a semiconductor wafer continuously along a periphery of the semiconductor wafer with an electrically grounded conductive member; and spinning the semiconductor wafer, wherein surface charges induced during spinning are dissipated by movement of electrons from the semiconductor wafer to the electrically grounded conductive member at the periphery of the semiconductor wafer.
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公开(公告)号：US12128455B2
公开(公告)日：2024-10-29
申请号：US17887718
申请日：2022-08-15
Inventor： Chih-Wen Liu , Yeo-Sin Lin , Shu-Wei Hsu , Che-Hao Tu , Hui-Chi Huang , Kei-Wei Chen
CPC classification number: B08B3/10 , B08B1/12 , B24B37/044 , B24B37/046 , B24B37/105 , B24B37/30 , B24B57/02
Abstract: A method comprising: providing a slurry to a polishing pad that is disposed on a wafer platen, the slurry comprising a plurality of electrically charged abrasive particles having a first electrical polarity; moving a first side of a wafer into contact with the slurry and the polishing pad;
applying a first electrical charge having a second electrical polarity, opposite the first electrical polarity, to a first conductive rod; moving the first side of the wafer away from the polishing pad while the first electrical charge is applied to the first conductive rod; moving a first wafer brush into contact with the first side of the wafer; applying a second electrical charge having the second electrical polarity, opposite the first electrical polarity, to a second conductive rod arranged within the first wafer brush; and moving the first wafer brush away from the first side of the wafer.-
公开(公告)号：US11664213B2
公开(公告)日：2023-05-30
申请号：US16727533
申请日：2019-12-26
Inventor： Hui-Chi Huang , Jeng-Chi Lin , Pin-Chuan Su , Chien-Ming Wang , Kei-Wei Chen
CPC classification number: H01L21/02087 , A46B13/04 , B08B1/002 , B08B1/04 , B08B3/08 , B08B5/04 , B08B7/04 , A46B2200/30
Abstract: A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.
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公开(公告)号：US11217479B2
公开(公告)日：2022-01-04
申请号：US16246125
申请日：2019-01-11
Inventor： Hsin-Ying Ho , Fang-I Chih , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/768
Abstract: A multiple metallization scheme in conductive features of a device uses ion implantation in a first metal layer to make a portion of the first metal layer soluble to a wet cleaning agent. The soluble portion may then be removed by a wet cleaning process and a subsequent second metal layer deposited over the first metal layer. An additional layer may be formed by a second ion implantation in the second metal layer may be used to make a controllable portion of the second metal layer soluble to a wet cleaning agent. The soluble portion of the second metal layer may be removed by a wet cleaning process. The process of depositing metal layers, implanting ions, and removing soluble portions, may be repeated until a desired number of metal layers are provided.
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