公开(公告)号：US20250029791A1

公开(公告)日：2025-01-23

申请号：US18708472

申请日：2022-10-12

Applicant: TDK Corporation

Inventor： Hitoshi SAITA

IPC: H01G4/33 ,  H01G4/012 ,  H01G4/228 ,  H01G4/38

Abstract: A thin film capacitor includes a dielectric layer, capacitor electrodes formed respectively on first and second surfaces of the dielectric layer, a protective insulating film formed on the first surface of the dielectric layer so as to embed therein one of the capacitor electrodes, a protective insulating film formed on the second surface of the dielectric layer so as to embed therein another of the capacitor electrodes, and terminal electrodes connected respectively to the capacitor electrodes. One of the terminal electrodes includes a first section positioned on the protective insulating film so as to overlap the other of the capacitor electrodes, a second section positioned on the protective insulating film so as not to overlap the other of the capacitor electrodes, and a third section connecting the first and second sections.

公开(公告)号：US20250006432A1

公开(公告)日：2025-01-02

申请号：US18754832

申请日：2024-06-26

Applicant: TDK CORPORATION

Inventor： Tadashi IINO ,  Hiroyasu INOUE ,  Hitoshi SAITA ,  Masahiro HIRAOKA

IPC: H01G4/33

Abstract: A thin film capacitor includes a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer. The thin film capacitor includes an intermediate layer between the dielectric layer and the second electrode layer. The intermediate layer includes at least one stacking unit including a first intermediate layer and a second intermediate layer stacked in contact with the first intermediate layer. The first intermediate layer of the at least one stacking unit closest to the dielectric layer is stacked in contact with the dielectric layer. The first intermediate layer includes a first metal (M1) as a main component. The second intermediate layer includes a second metal (M2), different from the first metal, as a main component.

公开(公告)号：US20230420186A1

公开(公告)日：2023-12-28

申请号：US18080962

申请日：2022-12-14

Applicant: TDK CORPORATION

Inventor： Masahiro HIRAOKA ,  Hitoshi SAITA

IPC: H01G4/12 ,  H01G4/33

CPC classification number: H01G4/1209 ,  H01G4/33

Abstract: A dielectric device includes a first electrode, dielectric film, and second electrode, which are laminated. The dielectric film includes columnar crystals extending in a lamination direction. Provided that “x” denotes a reciprocal (1/μm) of a dielectric film thickness and “y” denotes a dielectric material average crystallite size (nm) calculated by the Scherrer equation, “x” and “y” are located within a quadrilateral having point A (0.10, 5), point B (10, 20), point C (10, 35), and point D (0.10, 10) as vertices. Alternatively, the columnar crystals have an average width of less than 40 nm within a distance range from one tenth to one third of the dielectric film thickness from one electrode to the other and an average width of 40 nm or more within a distance range from one tenth to one third of the dielectric film thickness from the other electrode to the one in the lamination direction.

公开(公告)号：US20220254566A1

公开(公告)日：2022-08-11

申请号：US17581060

申请日：2022-01-21

Applicant: TDK CORPORATION

Inventor： Hitoshi SAITA

IPC: H01G2/16 ,  H01G4/228 ,  H01G4/005

Abstract: Disclosed herein is a capacitor component that includes a lower electrode, a capacitive insulating film covering the lower electrode, a plurality of upper electrodes overlapping the lower electrode through the capacitive insulating film, a first external terminal connected to the lower electrode, a plurality of fuse wires connected respectively to the plurality of upper electrodes, and a second external terminal connected in common to the plurality of fuse wires. The resistance values of the plurality of respective fuse wires are higher than the resistance values of the plurality of corresponding upper electrodes.

公开(公告)号：US20210257164A1

公开(公告)日：2021-08-19

申请号：US17165498

申请日：2021-02-02

Applicant: TDK CORPORATION

Inventor： Masahiro HIRAOKA ,  Mitsuhiro TOMIKAWA ,  Hitoshi SAITA

IPC: H01G4/33 ,  H01G4/008 ,  H01G4/08 ,  H01G4/30 ,  H05K3/38 ,  H05K1/03

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.

公开(公告)号：US20190295774A1

公开(公告)日：2019-09-26

申请号：US16359149

申请日：2019-03-20

Applicant: TDK Corporation

Inventor： Masahiro HIRAOKA ,  Hiroshi TAKASAKI ,  Hitoshi SAITA

IPC: H01G4/33 ,  H01G4/008 ,  C23C14/34

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

公开(公告)号：US20180132355A1

公开(公告)日：2018-05-10

申请号：US15804324

申请日：2017-11-06

Applicant: TDK CORPORATION

Inventor： Hitoshi SAITA ,  Yoshihiko YANO

IPC: H05K1/18 ,  H01L23/498 ,  H01L23/64 ,  H01L23/00 ,  H01L21/48 ,  H01G4/30 ,  H01G4/008 ,  H05K1/11

CPC classification number: H05K1/182 ,  H01G4/008 ,  H01G4/306 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/642 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2924/1205 ,  H01L2924/14 ,  H01L2924/15313 ,  H05K1/115 ,  H05K2201/10015

Abstract: A thin-film capacitor includes a pair of electrode layers composed of a first electrode layer configured to store positive charges and a second electrode layer configured to store negative charges; and a dielectric layer sandwiched between the pair of electrode layers along a lamination direction. The first electrode layer includes a first main electrode layer in contact with the dielectric layer. The second electrode layer includes a second main electrode layer and a second sub-electrode layer, both of which are formed of different metallic materials. The second sub-electrode layer is sandwiched between the dielectric layer and the second main electrode layer along the lamination direction. The second main electrode layer is formed of a material having a melting point lower than both a melting point of a material of the first electrode layer, or the first main electrode layer, and that of a material of the second sub-electrode layer.

公开(公告)号：US20170110251A1

公开(公告)日：2017-04-20

申请号：US15296374

申请日：2016-10-18

Applicant: TDK CORPORATION

Inventor： Hitoshi SAITA ,  Masahiro YAMAKI ,  Yukihiro AZUMA ,  Yoshihiko YANO

IPC: H01G4/33 ,  H01G4/012 ,  H01G4/252 ,  H01G4/008

CPC classification number: H01G4/33 ,  H01G4/008 ,  H01G4/012 ,  H01G4/252 ,  H01L27/11582 ,  H01L28/00 ,  H05K1/162

Abstract: In a thin film capacitor, a first electrode layer 1 has one or more regions B in which a distance Hb between a boundary surface I of the first electrode layer 1 and a dielectric layer 2, and a surface of the first electrode layer 1, becomes maximum, and an outer layer 12 has one or more regions T in which a distance Ht between the boundary surface I and a surface of the outer layer 12 becomes maximum, as well as one or more regions t in which the distance Ht between the boundary surface I and the surface of the outer layer 12 does not become maximum. A projected area SHb, a projected area SHt, and a projected area S, satisfy equations (1) and (2): 60%≦(SHb/S)  (1); 60%≦(SHt/S)  (2).