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公开(公告)号：US20180123026A1
公开(公告)日：2018-05-03
申请号：US15708747
申请日：2017-09-19
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Yohei SHIOKAWA
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1653 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L43/02 , H03H7/06 , H03H11/04
Abstract: The present invention has the purpose of providing an electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element that utilizes magnetization reversal based on pure spin current. The electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element of the present invention includes a first ferromagnetic metal layer with a varying magnetization direction; spin-orbit torque wiring that adjoins the first ferromagnetic metal layer and that extends in a second direction in a plane orthogonal to a first direction normal to the first ferromagnetic metal layer; and electric-current-generated magnetic field assist wiring that is arranged so as to be electrically insulated from the first ferromagnetic metal layer by an insulating layer and in which flows an electric current I0 for forming a magnetic field H0 that assists magnetization reversal of the first ferromagnetic metal layer.
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公开(公告)号：US20180090677A1
公开(公告)日：2018-03-29
申请号：US15713029
申请日：2017-09-22
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
Abstract: A magnetoresistance effect element is capable of realizing a high magnetoresistance (MR) ratio. The magnetoresistance effect element includes a laminate in which: an underlayer; a first ferromagnetic metal layer; a tunnel barrier layer; and a second ferromagnetic metal layer are laminated in that order. The underlayer is made of a nitride, the tunnel barrier layer is made of any one selected from a group consisting of MgAl2O4, ZnAl2O4, MgO, and γ-Al2O3, and a degree of lattice mismatching between a lattice constant of the tunnel barrier layer and a lattice constant of a crystal structure to be taken by the underlayer is 5% or less.
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公开(公告)号：US20180090672A1
公开(公告)日：2018-03-29
申请号：US15715836
申请日：2017-09-26
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
CPC classification number: H01L43/08 , H01L27/228 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: Provided is a magnetoresistance effect device on which a magnetoresistance effect element having an excellent withstand voltage characteristic is mounted. The magnetoresistance effect device includes: an interlayer insulating layer; a through electrode that passes through the interlayer insulating layer and is exposed on at least one surface of the interlayer insulating layer; and a magnetoresistance effect element that is laminated on the through electrode. A Vickers hardness difference between the interlayer insulating layer and the through electrode on a lamination surface on which the magnetoresistance effect element is laminated is 3 GPa or lower.
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公开(公告)号：US20180083186A1
公开(公告)日：2018-03-22
申请号：US15559195
申请日：2016-03-28
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tatsuo SHIBATA , Katsuyuki NAKADA , Yoshitomo TANAKA
CPC classification number: H01L43/08 , G11B5/39 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , H01L45/147
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
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25.发明申请公开(公告)号：US20160284982A1
公开(公告)日：2016-09-29
申请号：US15038244
申请日：2014-11-14
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tohru OIKAWA , Hayato KOIKE
CPC classification number: H01L43/08 , G01R33/098 , G11B5/3909 , G11B2005/3996 , H01L29/1033 , H01L29/66984 , H01L29/82 , H01L43/02
Abstract: Spin-transport elements using semiconductors have had the problem of higher element resistance than conventional GMR elements and TMR elements, making it difficult to obtain high magnetoresistance ratios. A magnetoresistive element including a semiconductor channel layer; a first ferromagnetic layer disposed on the semiconductor channel layer; a second ferromagnetic layer disposed away from the first ferromagnetic layer; and a non-magnetic first reference electrode disposed away from the first ferromagnetic layer and the second ferromagnetic layer, wherein current is input from the second ferromagnetic layer to the first ferromagnetic layer through the semiconductor channel layer, a voltage between the second ferromagnetic layer and the first reference electrode is output.
Abstract translation: 使用半导体的旋转元件具有比常规GMR元件和TMR元件更高的元件电阻的问题，使得难以获得高磁阻比。 一种包括半导体沟道层的磁阻元件; 设置在所述半导体沟道层上的第一铁磁层; 远离所述第一铁磁层设置的第二铁磁层; 以及远离所述第一铁磁层和所述第二铁磁层设置的非磁性第一参考电极，其中电流通过所述半导体沟道层从所述第二铁磁层输入到所述第一铁磁层，所述第二铁磁层和所述第二铁磁层之间的电压 输出第一参考电极。
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Patent Agency Ranking
公开(公告)号：US20250098547A1
公开(公告)日：2025-03-20
申请号：US18470708
申请日：2023-09-20
Applicant: TDK CORPORATION
Inventor： Shuji OKAME , Tomoyuki SASAKI , Zhenyao TANG
Abstract: The magnetic memory of the present disclosure comprises a plurality of magnetoresistive effect elements. Each of the magnetoresistive effect elements comprises a reference layer, a magnetization free layer, a tunnel barrier layer provided between the reference layer and the magnetization free layer, a first cap layer provided on the magnetization free layer, a second cap layer; and a ferromagnetic layer provided between the first cap layer and the second cap layer. The ferromagnetic layer has a thickness less than a thickness of the magnetization free layer.
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公开(公告)号：US20240355521A1
公开(公告)日：2024-10-24
申请号：US18034798
申请日：2022-09-30
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Katsuyuki NAKADA , Kaito ASAI
CPC classification number: H01F17/0013 , H01F27/292 , H01F2017/0066
Abstract: A spin inductor has a first inductor layer, a first terminal, and a second terminal. The first inductor layer includes a first wiring layer and a first ferromagnetic layer in contact with the first wiring layer. The first terminal is in contact with a first lateral surface of the first inductor layer. The second terminal is in contact with a second lateral surface that is different from the first lateral surface of the first inductor layer. A virtual plane that connects a top edge and a bottom edge of the first lateral surface is inclined in the laminating direction.
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公开(公告)号：US20240339255A1
公开(公告)日：2024-10-10
申请号：US18744960
申请日：2024-06-17
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Tomoyuki SASAKI
CPC classification number: H01F10/329 , G01R33/091 , G01R33/093 , G01R33/098 , G11B5/39 , G11B2005/3996 , H03H2001/0057 , H03H7/06 , H10B61/00 , H10N52/85
Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.
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公开(公告)号：US20240290822A1
公开(公告)日：2024-08-29
申请号：US18025812
申请日：2022-10-11
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tatsuo SHIBATA , Katsuyuki NAKADA
IPC: H01G5/16
CPC classification number: H01L28/60
Abstract: A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.
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公开(公告)号：US20240266099A1
公开(公告)日：2024-08-08
申请号：US18106683
申请日：2023-02-07
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Tomoyuki SASAKI
IPC: H01F10/32
CPC classification number: H01F10/329 , G01R33/091 , G01R33/093 , G01R33/098 , G11B5/39 , G11B2005/3996 , H03H2001/0057 , H03H7/06 , H10B61/00 , H10N52/85
Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.
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