SEMICONDUCTOR PACKAGE WITH AN INSULATION LAYER

    公开(公告)号:US20250112182A1

    公开(公告)日:2025-04-03

    申请号:US18478226

    申请日:2023-09-29

    Abstract: A semiconductor package includes a semiconductor wafer having a first connection pad and a second connection pad spaced apart by a semiconductor region of the semiconductor wafer. Portions of the semiconductor wafer are covered by a protective overcoat. The semiconductor package also includes a cap wafer mounted to the semiconductor wafer and overpassing the semiconductor region of the semiconductor wafer. The cap wafer extends between the first connection pad and the second connection pad of the semiconductor wafer. The semiconductor package further includes an insulation material overlaying the cap wafer. The insulation material comprising vias to the first connection pad and the second connection pad, the vias being filled with a conductive material.

    Micro-mechanical resonator having out-of-phase and out-of-plane flexural mode resonator portions

    公开(公告)号:US12212298B2

    公开(公告)日:2025-01-28

    申请号:US17877206

    申请日:2022-07-29

    Abstract: A micro-mechanical resonator die includes: micro-mechanical resonator die layers; a cavity formed in at least one of the micro-mechanical resonator die layers; and a micro-mechanical resonator suspended in the cavity. The micro-mechanical resonator includes: a base; a first resonator portion extending from the base along a first plane; and a second resonator portion extending from the base along a second plane. The first resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the first resonator portion out of the first plane. The second resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the second resonator portion out of the second plane and out-of-phase relative to the first resonator portion.

    HYBRID BANDPASS FILTER HAVING ACOUSTIC WAVE AND ELECTROMAGNETIC RESONATORS

    公开(公告)号:US20250015783A1

    公开(公告)日:2025-01-09

    申请号:US18349020

    申请日:2023-07-07

    Abstract: A filter includes an electromagnetic (EM) resonator having a first EM resonator terminal and a second EM resonator terminal. The second EM filter terminal is coupled to a ground terminal. The filter includes a first bulk acoustic wave (BAW) resonator coupled between the first EM resonator terminal and the ground terminal and includes a second BAW resonator coupled between the first EM resonator terminal and the ground terminal. A third BAW resonator is coupled between a first filter terminal and a first BAW resonator terminal of the first BAW resonator. A fourth BAW resonator is coupled between a second filter terminal and a second BAW resonator terminal of the second BAW resonator.

    Thermal and stress isolation for precision circuit

    公开(公告)号:US10727161B2

    公开(公告)日:2020-07-28

    申请号:US16055395

    申请日:2018-08-06

    Abstract: Described examples include microelectronic devices and integrated circuits with an active first circuit in a first segment of a first wafer, a second circuit in a second segment of the first wafer, and second and third wafers bonded to different surfaces of the first wafer to provide first and second cavities with surfaces spaced from the first segment. An opening extends through the first wafer between the first and second cavities to separate portions of the first and second segments and to form a sealed cavity that surrounds the first segment. A bridge segment of the first wafer supports the first segment in the sealed cavity and includes one or more conductive structures to electrically connect the first and second circuits.

    UNRELEASED PLANE ACOUSTIC WAVE RESONATORS
    30.
    发明申请

    公开(公告)号:US20190052247A1

    公开(公告)日:2019-02-14

    申请号:US15671996

    申请日:2017-08-08

    Inventor: Ting-Ta Yen

    Abstract: Unreleased plane acoustic wave (PAW) resonators are disclosed. An example unreleased PAW resonator includes a substrate, a first acoustic reflector disposed on the substrate, and a piezoelectric layer disposed on the first acoustic reflector, wherein the first acoustic reflector and the piezoelectric layer are unreleased from the substrate.

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