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公开(公告)号:US4849290A
公开(公告)日:1989-07-18
申请号:US84038
申请日:1987-08-11
申请人: Naoji Fujimori , Takahiro Imai
发明人: Naoji Fujimori , Takahiro Imai
CPC分类号: B23B27/148 , Y10T428/30
摘要: Alumina coated with diamond comprises an alumina substrate, a silicon carbide film formed on the alumina substrate, and a diamond film formed on the silicon carbide film.
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公开(公告)号:US5766783A
公开(公告)日:1998-06-16
申请号:US565027
申请日:1995-11-30
申请人: Yoshiharu Utsumi , Takahiro Imai , Naoji Fujimori
发明人: Yoshiharu Utsumi , Takahiro Imai , Naoji Fujimori
CPC分类号: C23C30/00 , C23C14/0641 , C23C14/3414 , C23C16/34 , Y10T428/265
摘要: Boron-aluminum nitride B.sub.x Al.sub.1-x N.sub.y (0.001.ltoreq.x.ltoreq.0.70, 0.85.ltoreq.y.ltoreq.1.05) films having wurtzite type structure are proposed. The material has higher hardness, higher sound velocity and wider band gap than hexagonal aluminum nitride (AlN).
摘要翻译: 提出了具有纤锌矿型结构的硼 - 氮化铝BxAl1-xNy(0.001 =x≤0.70,0.85 = y <1.05)。 该材料具有比六方氮化铝(AlN)更高的硬度,更高的声速和更宽的带隙。
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公开(公告)号:US5624719A
公开(公告)日:1997-04-29
申请号:US279088
申请日:1994-07-22
申请人: Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
发明人: Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
CPC分类号: C23C16/27 , C23C16/277 , C30B25/02 , C30B29/04
摘要: A method for synthesizing diamond by chemical vapor deposition (CVD) is described. The method produces diamond of high purity and high crystallizability having various uses at low cost and at high speed. In a first method, a mixture of oxygen gas and a carbon-containing compound gas, and optionally an inert gas, is introduced into a reaction vessel. In a second method, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas, sulfur dioxide, an aforementioned mixture of oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into the reaction vessel. A plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.
摘要翻译: 描述了通过化学气相沉积(CVD)合成金刚石的方法。 该方法以低成本和高速度生产具有各种用途的高纯度和高结晶度的金刚石。 在第一种方法中,将氧气和含碳化合物气体以及任选的惰性气体的混合物引入反应容器中。 在第二种方法中,引入含有氟气,氯气,氮氧化物气体,二氧化硫,上述氧气和含碳化合物气体的混合物或其与惰性气体的混合物中的至少一种的混合物 进入反应容器。 通过使用电磁场产生等离子体,从而在放置在容器中的基底材料上产生金刚石。
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公开(公告)号:US5258091A
公开(公告)日:1993-11-02
申请号:US882683
申请日:1992-05-12
申请人: Takahiro Imai , Naoji Fujimori
发明人: Takahiro Imai , Naoji Fujimori
CPC分类号: H01J35/18 , H01J2235/183
摘要: An X-ray window having a diamond X-ray transparent film, diamond reinforcing crosspieces and a substrate on which the diamond X-ray transparent film has been grown. As reinforcing crosspieces are made of diamond, no thermal stress is generated between the X-ray transparent film and the crosspieces. This mask excels in flatness, transmittance of X-rays, and strength.
摘要翻译: 具有金刚石X射线透明膜的X射线窗,金刚石加强肋和已经生长了金刚石X射线透明膜的基板。 由于加强挡板由金刚石制成,所以在X射线透明膜和挡条之间不产生热应力。 该面膜的平面度,X射线透过率和强度均优异。
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公开(公告)号:US5197651A
公开(公告)日:1993-03-30
申请号:US573062
申请日:1990-08-24
申请人: Tsutomu Nakamura , Katsuyuki Tanaka , Tetuso Nakai , Takahiro Imai , Akihiko Ikegaya , Naoji Fujimori
发明人: Tsutomu Nakamura , Katsuyuki Tanaka , Tetuso Nakai , Takahiro Imai , Akihiko Ikegaya , Naoji Fujimori
CPC分类号: C04B41/009 , C04B41/5002 , C04B41/85 , H01L24/75 , H01L2924/12033 , H01L2924/351
摘要: A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate consisting of a member selected from the group consisting of sintered compacts of Si or Si.sub.3 N.sub.4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond deposited by gaseous phase synthesis method.
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公开(公告)号:US5111491A
公开(公告)日:1992-05-05
申请号:US747950
申请日:1991-08-21
申请人: Takahiro Imai , Naoji Fujimori
发明人: Takahiro Imai , Naoji Fujimori
IPC分类号: G03F1/22 , H01L21/027
CPC分类号: G03F1/22
摘要: An X-ray lithography mask comprising a X-ray transparent film made from diamond, X-ray absorber patterns deposited on the X-ray transparent film and diamond crosspieces shaped on the diamond X-ray transparent film for reinforcing the diamond X-ray transparent film. Since both the transparent film and the reinforcing crosspieces are made from diamond, no thermal stress is induced by the change of temperature. The mask excels in transmittance for X-ray, flatness and strength.
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公开(公告)号:US5079425A
公开(公告)日:1992-01-07
申请号:US639085
申请日:1991-01-09
申请人: Takahiro Imai , Tetsuo Yashiki , Naoji Fujimori
发明人: Takahiro Imai , Tetsuo Yashiki , Naoji Fujimori
IPC分类号: G01T1/26
CPC分类号: G01T1/26
摘要: A radiation detecting element comprising a pair of electrode and a semiconductor layer interposed between said pair of electrodes wherein said semiconductor layer comprises a polycrystal diamond having no grain boundary in a direction in which a voltage is applied, and an electric current flows through said semiconductor layer from one electrode to the other without crossing a grain boundary, which element has high sensitivity and a high response speed.
摘要翻译: 一种放射线检测元件,包括一对电极和插入在所述一对电极之间的半导体层,其中所述半导体层包括在施加电压的方向上没有晶界的多晶金刚石,并且电流流过所述半导体层 从一个电极到另一个电极不交叉晶界,该元件具有高灵敏度和高响应速度。
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公开(公告)号:US4863529A
公开(公告)日:1989-09-05
申请号:US165711
申请日:1988-03-08
申请人: Takahiro Imai , Naoji Fujimori
发明人: Takahiro Imai , Naoji Fujimori
CPC分类号: C30B25/18 , C30B25/02 , C30B29/04 , H01L21/02381 , H01L21/02395 , H01L21/02447 , H01L21/02527 , H01L21/0262 , H01L21/02579 , Y10S148/148
摘要: A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide formed on the base substrate and a thin film of single crystal diamond which is epitaxially grown on the intermediate layer, which can have a large area and be easily and economically produced.
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公开(公告)号:US6028020A
公开(公告)日:2000-02-22
申请号:US567530
申请日:1995-12-05
申请人: Motoyuki Tanaka , Takahiro Imai , Naoji Fujimori
发明人: Motoyuki Tanaka , Takahiro Imai , Naoji Fujimori
摘要: A single crystal quartz thin film having a thickness of 5 nm to 50 .mu.m can be prepared by forming the thin film on a single crystal substrate by a sol-gel process and peeling the thin film from the substrate. The present invention can provide the single crystal quartz thin film at a low price without a large and complex apparatus.
摘要翻译: 通过溶胶 - 凝胶法在单晶基板上形成薄膜,并从基板剥离薄膜,可以制备厚度为5nm〜50μm的单晶石英薄膜。 本发明可以以低价格提供单晶石英薄膜而不需要大而复杂的装置。
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公开(公告)号:US5791045A
公开(公告)日:1998-08-11
申请号:US819440
申请日:1997-03-17
IPC分类号: H01L21/48 , H01L23/367 , H01L23/373 , B23P15/26
CPC分类号: H01L21/4882 , H01L23/3672 , H01L23/3732 , H01L2924/0002 , Y10T29/4935
摘要: A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are combined with the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such heat sink is produced by a simple process including arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper ends of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.
摘要翻译: 具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。 翅片与基底组合,并且是具有至少1(W / cm×K)的热导率的材料,例如金刚石。 这种散热器是通过简单的工艺生产的,其包括设置用于生长金刚石的基底材料和翅片,使得基底材料的表面和翅片的上端通过使用适当的支撑构件 或者通过使基材自身工作并通过气相合成方法在其上生长金刚石。
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