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    Angular velocity sensor and angular velocity sensing device
    21.
    发明申请
    Angular velocity sensor and angular velocity sensing device 有权
    角速度传感器和角速度检测装置

    公开(公告)号：US20090165554A1

    公开(公告)日：2009-07-02

    申请号：US12078051

    申请日：2008-03-26

    申请人： Takao Noguchi ,  Kenichi Tochi ,  Ken Unno ,  Tatsuo Namikawa

    发明人： Takao Noguchi ,  Kenichi Tochi ,  Ken Unno ,  Tatsuo Namikawa

    IPC分类号： G01C19/56

    CPC分类号： G01C19/5642 ,  G01C19/5607 ,  H01L41/08

    摘要： Provided is a horizontally located sensitive angular velocity sensor capable of easily eliminating influence of acceleration in a lateral direction and whose fixed section is easily fixed. The angular velocity sensor includes a pair of fixed sections fixed on a top of an sensor support section of a case, a detection arm extending along a plane parallel to the sensor support section, and a pair of upper drive arm and lower drive arm extending along the plane parallel to the sensor support section and extending in a direction opposite to each other so as to intersect an extending direction of the detection arm.

    摘要翻译： 提供了一种水平定位的敏感角速度传感器，其能够容易地消除横向加速度的影响，并且其固定部分容易固定。 角速度传感器包括固定在壳体的传感器支撑部分的顶部上的一对固定部分，沿着平行于传感器支撑部分的平面延伸的检测臂，以及一对上延伸的上驱动臂和下驱动臂 该平面平行于传感器支撑部分并且沿彼此相反的方向延伸以与检测臂的延伸方向相交。

    Method of quenching large-diameter thin-wall metal pipe
    25.
    发明授权
    Method of quenching large-diameter thin-wall metal pipe 失效
    大直径薄壁金属管淬火方法

    公开(公告)号：US4050963A

    公开(公告)日：1977-09-27

    申请号：US652576

    申请日：1976-01-26

    申请人： Kazuo Kunioka ,  Yutaka Mihara ,  Takao Noguchi

    发明人： Kazuo Kunioka ,  Yutaka Mihara ,  Takao Noguchi

    IPC分类号： C21D1/18 ,  C21D9/08 ,  C21D11/00

    CPC分类号： C21D9/085

    摘要： A method of quenching a large-diameter thin-walled metal pipe includes the steps of moving the metal pipe through a heating zone and passing the pipe through a cooling zone following passage of the pipe through the heating zone. The cooling zone includes a plurality of nozzles for spraying a cooling liquid onto the pipe from the nozzles, so as to quench the pipe. The process steps further include detecting the amount of strain on the outer periphery of the quenched pipe at the rear end of the cooling zone, as seen in the direction of movement of the pipe, so as to obtain a deviation of a detected value from a preset value, and adjusting the amount of cooling liquid sprayed onto the pipe from the nozzles in accordance with the amount of deviation from the preset value, so that the adjusted cooling water spray controls the deviation of pipe emerging from the cooling zone, for example, reduces the eccentricity of a circular pipe.

    摘要翻译： 大直径薄壁金属管淬火的方法包括以下步骤：使金属管通过加热区，并且在通过加热区之后使管通过冷却区。 冷却区包括用于从喷嘴将冷却液喷射到管上的多个喷嘴，以使管道骤冷。 处理步骤还包括检测在冷却区的后端处的淬火管的外周上的应变量，如在管的移动方向上看到的，以便获得检测值与 预设值，并根据与预设值的偏差量调整从喷嘴喷射到管道上的冷却液的量，使得调节后的冷却水喷雾控制从冷却区出来的管的偏离，例如， 减少圆管的偏心率。

    Piezoelectric element and gyroscope
    26.
    发明申请
    Piezoelectric element and gyroscope 有权
    压电元件和陀螺仪

    公开(公告)号：US20100244632A1

    公开(公告)日：2010-09-30

    申请号：US12659997

    申请日：2010-03-26

    申请人： Kazuya Maekawa ,  Takao Noguchi ,  Kenichi Tochi ,  Ken Unno

    发明人： Kazuya Maekawa ,  Takao Noguchi ,  Kenichi Tochi ,  Ken Unno

    IPC分类号： H01L41/04

    CPC分类号： G01C19/5607 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/316

    摘要： A piezoelectric element having a crystal structure that enables a piezoelectric film to be formed in an unstressed state is provided. The piezoelectric film contains an a-axis oriented crystal and a c-axis oriented crystal, where a difference in lattice constant between the a-axis oriented crystal and the c-axis oriented crystal is not more than 0.06 Å. The present inventors have newly found that a stress accumulated in the piezoelectric film can be reduced while maintaining favorable piezoelectric properties when a condition that the difference in lattice constant between the a-axis oriented crystal and the c-axis oriented crystal is not more than 0.06 Å is satisfied. When the condition is satisfied, the c-axis oriented crystal and the a-axis oriented crystal are properly balanced and as a result crystal particles of the piezoelectric film are closest-packed on its base in an ideal state, which contributes to a reduced stress.

    摘要翻译： 提供了具有能够使压电膜形成为无应力状态的晶体结构的压电元件。 压电膜包含a轴取向晶体和c轴取向晶体，其中a轴取向晶体和c轴取向晶体之间的晶格常数差不大于0.06。 本发明人新发现，当a轴取向晶体和c轴取向晶体之间的晶格常数差不大于0.06的条件时，可以在保持良好的压电特性的同时，减小在压电膜中累积的应力 Å满意 当满足条件时，c轴取向晶体和a轴取向晶体被适当地平衡，结果在理想状态下，压电膜的晶体颗粒在其基极上最紧密堆积，这有助于减小应力 。

    Angular velocity sensor and angular velocity sensing device
    27.
    发明授权
    Angular velocity sensor and angular velocity sensing device 有权
    角速度传感器和角速度检测装置

    公开(公告)号：US07714486B2

    公开(公告)日：2010-05-11

    申请号：US12078050

    申请日：2008-03-26

    申请人： Kenichi Tochi ,  Tatsuo Namikawa ,  Ken Unno ,  Takao Noguchi

    发明人： Kenichi Tochi ,  Tatsuo Namikawa ,  Ken Unno ,  Takao Noguchi

    IPC分类号： H01L41/08

    CPC分类号： G01C19/5628 ,  B81B2201/025 ,  B81C1/0023 ,  G01C25/00 ,  H01L41/1132

    摘要： The present invention provides an angular velocity sensor in which higher sensitivity for sensors is available even with a smaller base portion. The angular velocity sensor includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm and a lower detection arm, each of them being connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion in such a manner as to form a pair of arms with the upper detection arm in between and extending in a direction parallel to the extending direction of the upper detection arm.

    摘要翻译： 本发明提供了一种角速度传感器，其中传感器的更高的灵敏度即使在较小的基部也可获得。 角速度传感器包括固定到壳体的传感器元件支撑部分的上表面的固定部分，上检测臂和下检测臂，它们各自连接到彼此相对的侧面上的固定部分，并且延伸 沿着平行于传感器元件支撑部分的顶表面的平面，以及一对上部振动臂，其以固定部分的方式连接，以便形成一对臂，其中上部检测臂在其中并且在方向 平行于上检测臂的延伸方向。

    Multilayer thin film and its fabrication process as well as electron device
    28.
    发明授权
    Multilayer thin film and its fabrication process as well as electron device 有权
    多层薄膜及其制造工艺以及电子器件

    公开(公告)号：US06709776B2

    公开(公告)日：2004-03-23

    申请号：US09842805

    申请日：2001-04-27

    申请人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

    发明人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

    IPC分类号： B32B900

    CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  Y10T428/2495

    摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

    摘要翻译： 本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。 为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成 缓冲层和铁电薄膜，其制造工艺和电子器件。

    Process for preparing ferroelectric thin films
    29.
    发明授权
    Process for preparing ferroelectric thin films 有权
    制备铁电薄膜的工艺

    公开(公告)号：US06387712B1

    公开(公告)日：2002-05-14

    申请号：US09453505

    申请日：1999-12-03

    申请人： Yoshihiko Yano ,  Takao Noguchi

    发明人： Yoshihiko Yano ,  Takao Noguchi

    IPC分类号： H01L2100

    CPC分类号： C23C14/08 ,  C23C14/0026 ,  H01L21/31691 ,  H01L29/516 ,  Y10S438/909

    摘要： In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8≦(Pb+Rn)/Ti≦1.3 and 0.5≦Pb/(Pb+Rn)≦0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.

    摘要翻译： 在包含在基板上形成的铁电薄膜的薄膜结构体中，铁电薄膜含有原子比为0.8 <=（Pb + Rn）/ 2的稀土元素（Rn），Pb，Ti和O。 Ti <= 1.3和0.5 <= Pb /（Pb + Rn）<= 0.99，具有钙钛矿型晶体结构，为（001）单向取向或（001）取向和（100）取向的混合物。 铁电薄膜可以形成在硅（100）衬底上，通常通过在真空室中蒸发氧化铅和TiO x，同时在其中引入氧化气体。