公开(公告)号：US5679475A

公开(公告)日：1997-10-21

申请号：US368539

申请日：1995-01-04

申请人： Kenji Yamagata ,  Takao Yonehara

发明人： Kenji Yamagata ,  Takao Yonehara

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  B32B15/00

CPC分类号： H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  H01L2221/68363 ,  Y10S438/96 ,  Y10S438/977 ,  Y10T428/249953 ,  Y10T428/249967

摘要： A process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step of making a silicon monocrystalline thin film to epitaxially grow on a surface of the porous layer, a step of oxidizing the surface of the epitaxial growth layer, a step of forming a deposited film on the oxidized surface, thereby obtaining a first substrate, a step of closely contacting the deposited film of the first substrate to a second substrate, a step of heat treating the closely contacted substrates and a step of selectively etching the porous layer.

摘要翻译： 制备半导体衬底的方法包括使硅单晶衬底多孔化以形成多孔层的步骤，使硅单晶薄膜在多孔层的表面上外延生长的步骤，使多孔层的表面氧化的步骤 外延生长层，在氧化表面上形成沉积膜的步骤，从而获得第一基板，将第一基板的沉积膜紧密接触第二基板的步骤，对紧密接触的基板进行热处理的步骤和 选择性地蚀刻多孔层的步骤。

公开(公告)号：US5670411A

公开(公告)日：1997-09-23

申请号：US444015

申请日：1995-05-18

申请人： Takao Yonehara ,  Kenji Yamagata

发明人： Takao Yonehara ,  Kenji Yamagata

IPC分类号： H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  H01L21/76

CPC分类号： H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S148/012 ,  Y10S438/96

摘要： A process for forming a semiconductor substrate wherein an epitaxial layer is formed on a porous layer of a first substrate, an insulating layer is formed on the epitaxial layer, the insulating layer is bonded to a second substrate and the porous layer is selectively removed.

摘要翻译： 一种用于形成半导体衬底的方法，其中在第一衬底的多孔层上形成外延层，在外延层上形成绝缘层，绝缘层与第二衬底结合，并且选择性地去除多孔层。

公开(公告)号：US5363799A

公开(公告)日：1994-11-15

申请号：US979376

申请日：1992-11-19

申请人： Takao Yonehara ,  Yuji Nishigaki ,  Kenji Yamagata

发明人： Takao Yonehara ,  Yuji Nishigaki ,  Kenji Yamagata

IPC分类号： C30B25/18 ,  H01L21/20 ,  C30B25/02

CPC分类号： C30B25/18 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  Y10S117/913

摘要： A method for growth of a crystal wherein a monocrystalline seed is arranged on a substrate and a monocrystal is permitted to grow with the seed as the originating point, comprises the step of:(1) providing a substrate having a surface of smaller nucleation density;(2) arranging on the surface of the substrate primary seeds having sufficiently fine surface area to be agglomerated;(3) applying heat treatment to the primary seeds to cause agglomeration to occur, thereby forming a monocrystalline seed with a controlled face orientation; and(4) applying crystal growth treatment to permit a monocrystal to grow with the monocrystalline seed as the originating point.

摘要翻译： 一种生长晶体的方法，其中单晶种子布置在基底上并且允许单晶以种子作为起点生长，包括以下步骤：（1）提供具有较小成核密度的表面的基底; （2）在基材的表面上配置具有足够细小表面积的初级种子以使其团聚; （3）对初级种子进行热处理以引起团聚，从而形成具有受控面取向的单晶种子; 和（4）应用晶体生长处理以允许单晶以单晶种子为起点生长。

公开(公告)号：US5304820A

公开(公告)日：1994-04-19

申请号：US851238

申请日：1992-03-13

申请人： Hiroyuki Tokunaga ,  Kenji Yamagata ,  Takao Yonehara

发明人： Hiroyuki Tokunaga ,  Kenji Yamagata ,  Takao Yonehara

IPC分类号： C30B23/04 ,  C30B25/04 ,  H01L21/20 ,  H01L21/36 ,  H01L21/365 ,  H01L33/00

CPC分类号： C30B23/04 ,  C30B25/04 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.NDL) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in thata semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electroconduction type with change-over to one another into said gas phase, during said crystal forming treatment.

摘要翻译： 一种制备化合物半导体的方法包括在具有较小成核密度的包含非成核表面（SNDS）的自由表面的衬底上施加晶体形成处理，并且与晶体相邻地布置具有足够小的面积的成核表面（SNDL） 通过将底物暴露于任一气相，仅从单个核和较大的成核密度（NDL）生长而不是所述非成核表面（SNDS）的成核密度（NDS）;（a）含有 用于供给周期表的第II族原子的原料（II）和用于进料周期表的第Ⅵ族原子的原料（Ⅵ）和（b）含有用于进料的起始原料（Ⅲ）的气相（b） 周期表的第III族原子和用于进料周期表的V族原子的起始材料（V），从而在所述成核表面（SNDL）上仅形成单个核，并允许t的单晶 其化合物半导体从所述单核生长，其特征在于，通过馈送用于供给用于控制一种导电型掺杂剂的原料（Dn）和用于供给掺杂剂的起始材料（Dp），在所述单晶中形成半导体结 用于在所述晶体形成处理期间控制与所述电导型相反的导电类型，并且彼此转换成所述气相。

公开(公告)号：US20120282716A1

公开(公告)日：2012-11-08

申请号：US13550512

申请日：2012-07-16

申请人： Takao Yonehara ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

发明人： Takao Yonehara ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

IPC分类号： H01L33/60

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L21/7806 ,  H01L21/784 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/00

摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

摘要翻译： 提供了一种新颖的半导体制品制造方法等。 制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和 半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025） 半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

公开(公告)号：US20100026779A1

公开(公告)日：2010-02-04

申请号：US12442902

申请日：2007-10-25

申请人： Takao Yonehara ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

发明人： Takao Yonehara ,  Kenji Yamagata ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

IPC分类号： B41J2/45 ,  H01L21/18 ,  H01L29/06 ,  H01L21/306 ,  H01L33/00 ,  H01L21/762

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L21/7806 ,  H01L21/784 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/00

摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

摘要翻译： 提供了一种新颖的半导体制品制造方法等。 制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和 半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025） 半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

公开(公告)号：US06534382B1

公开(公告)日：2003-03-18

申请号：US09634542

申请日：2000-08-08

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida ,  Kenji Yamagata

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida ,  Kenji Yamagata

IPC分类号： H01L2130

CPC分类号： H01L21/76259 ,  B28D5/00 ,  G02F1/136277 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/304 ,  H01L21/76254 ,  H01L22/00 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

摘要翻译： 提供一种半导体制品的制造方法，其包括以下步骤：将膜粘合到具有多孔半导体层的基板上，并通过在剥离方向上对膜施加力而在多孔半导体层处将膜与基板分离。

公开(公告)号：US06383890B2

公开(公告)日：2002-05-07

申请号：US09211875

申请日：1998-12-15

申请人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

发明人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

IPC分类号： H01L2130

CPC分类号： H01L21/67092 ,  H01L21/6838

摘要： Two wafers are properly brought into contact with each other. The first wafer is supported by a wafer support table (3) having an annular peripheral portion (3d). The substrate support table (3) is in contact with only the peripheral portion (3d) of the first wafer. While the second wafer opposing the first wafer is supported, the lower surface of the second wafer is pressed near its central portion, so the first and second wafers come into contact with each other outward from the central portion. The central portion (3c) of the wafer support table (3) is not in contact with the first wafer. Even when particles adhere to the central portion, unevenness on the supported first wafer can be prevented. Therefore, no gas is left between the wafers. This invention also provides a wafer support table formed by fabricating a silicon wafer. A commercially available silicon wafer is fabricated by lithography to prepare a wafer support table (31). The wafer support table (31) has sealing portions (31a, 31b) and deflection prevention portions (31c). The wafer to be supported is chucked by reducing the pressure between the sealing portions (31a, 31b). The wafer to be supported is in contact only with the sealing portions (31a, 31b) and the deflection prevention portions (31c)

摘要翻译： 两个晶片正确地相互接触。 第一晶片由具有环形周边部分（3d）的晶片支撑台（3）支撑。 基板支撑台（3）仅与第一晶片的周边部分（3d）接触。 当与第一晶片相对的第二晶片被支撑时，第二晶片的下表面被压在其中心部分附近，因此第一和第二晶片从中心部分向外接触。 晶片支撑台（3）的中心部分（3c）不与第一晶片接触。 即使当颗粒粘附到中心部分时，也可以防止被支撑的第一晶片上的不均匀。 因此，晶片之间没有气体留下。 本发明还提供了通过制造硅晶片形成的晶片支撑台。 通过光刻制造市售硅晶片以制备晶片支撑台（31）。 晶片支撑台（31）具有密封部（31a，31b）和偏转防止部（31c）。 通过减小密封部（31a，31b）之间的压力来夹持待支撑的晶片。 待支撑的晶片仅与密封部分（31a，31b）和偏转防止部分（31c）接触，

公开(公告)号：US5453394A

公开(公告)日：1995-09-26

申请号：US10296

申请日：1993-01-28

申请人： Takao Yonehara ,  Kenji Yamagata

发明人： Takao Yonehara ,  Kenji Yamagata

IPC分类号： H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  H01L21/76

CPC分类号： H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S148/012 ,  Y10S438/96

摘要： A process for preparing a semiconductor substrate comprises bringing a first substrate provided with at least one of boron and phosphorus on the surface of an insulating layer formed on the surface of the substrate in contact with a second substrate, and integrating both of the substrates by a heat treatment.

摘要翻译： 制备半导体衬底的方法包括：在与第二衬底接触的基板的表面上形成的绝缘层的表面上带有设置有硼和磷中的至少一种的第一衬底，并且通过一个 热处理。

公开(公告)号：US5010033A

公开(公告)日：1991-04-23

申请号：US515351

申请日：1990-04-30

申请人： Hiroyuki Tokunaga ,  Kenji Yamagata ,  Takao Yonehara

发明人： Hiroyuki Tokunaga ,  Kenji Yamagata ,  Takao Yonehara

IPC分类号： C30B23/04 ,  C30B25/04 ,  H01L21/20 ,  H01L21/36 ,  H01L21/365

CPC分类号： C30B23/04 ,  C30B25/04 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  Y10S148/152 ,  Y10S438/925

摘要： A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.NDL) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in thata semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electrocondition type with change-over to one another into said gas phase, during said crystal forming treatment.