公开(公告)号：US5304820A

公开(公告)日：1994-04-19

申请号：US851238

申请日：1992-03-13

申请人： Hiroyuki Tokunaga ,  Kenji Yamagata ,  Takao Yonehara

发明人： Hiroyuki Tokunaga ,  Kenji Yamagata ,  Takao Yonehara

IPC分类号： C30B23/04 ,  C30B25/04 ,  H01L21/20 ,  H01L21/36 ,  H01L21/365 ,  H01L33/00

CPC分类号： C30B23/04 ,  C30B25/04 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.NDL) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in thata semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electroconduction type with change-over to one another into said gas phase, during said crystal forming treatment.

摘要翻译： 一种制备化合物半导体的方法包括在具有较小成核密度的包含非成核表面（SNDS）的自由表面的衬底上施加晶体形成处理，并且与晶体相邻地布置具有足够小的面积的成核表面（SNDL） 通过将底物暴露于任一气相，仅从单个核和较大的成核密度（NDL）生长而不是所述非成核表面（SNDS）的成核密度（NDS）;（a）含有 用于供给周期表的第II族原子的原料（II）和用于进料周期表的第Ⅵ族原子的原料（Ⅵ）和（b）含有用于进料的起始原料（Ⅲ）的气相（b） 周期表的第III族原子和用于进料周期表的V族原子的起始材料（V），从而在所述成核表面（SNDL）上仅形成单个核，并允许t的单晶 其化合物半导体从所述单核生长，其特征在于，通过馈送用于供给用于控制一种导电型掺杂剂的原料（Dn）和用于供给掺杂剂的起始材料（Dp），在所述单晶中形成半导体结 用于在所述晶体形成处理期间控制与所述电导型相反的导电类型，并且彼此转换成所述气相。

公开(公告)号：US5010033A

公开(公告)日：1991-04-23

申请号：US515351

申请日：1990-04-30

申请人： Hiroyuki Tokunaga ,  Kenji Yamagata ,  Takao Yonehara

发明人： Hiroyuki Tokunaga ,  Kenji Yamagata ,  Takao Yonehara

IPC分类号： C30B23/04 ,  C30B25/04 ,  H01L21/20 ,  H01L21/36 ,  H01L21/365

CPC分类号： C30B23/04 ,  C30B25/04 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  Y10S148/152 ,  Y10S438/925

摘要： A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.NDL) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus, characterized in thata semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electrocondition type with change-over to one another into said gas phase, during said crystal forming treatment.

公开(公告)号：US06706618B2

公开(公告)日：2004-03-16

申请号：US10206214

申请日：2002-07-29

申请人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

发明人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

IPC分类号： H01L2176

CPC分类号： H01L21/67092 ,  H01L21/2007

摘要： The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.

摘要翻译： 吸盘槽3a和3b中的空间被抽真空以将晶片1的整个表面吸附到晶片支撑台3的卡盘表面并使晶片1弯曲。晶片2与晶片1水平相对， 晶片2被压销6a按压。 两个晶片1和2的中心接触，并且接触部分逐渐扩展到中心部分3c的周边附近并呈现大致圆形。 之后，由卡盘槽3a卡住停止。 因此，晶片1变平，晶片1和2的整个表面接触。

公开(公告)号：US6156624A

公开(公告)日：2000-12-05

申请号：US832859

申请日：1997-04-04

申请人： Kenji Yamagata ,  Takao Yonehara ,  Tadashi Atoji ,  Kiyofumi Sakaguchi

发明人： Kenji Yamagata ,  Takao Yonehara ,  Tadashi Atoji ,  Kiyofumi Sakaguchi

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786 ,  H01L21/306

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  Y10S438/977

摘要： This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO.sub.2 surface and a second substrate possessing a Si surface on the SiO.sub.2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate, thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.

摘要翻译： 本发明解决了在其周边部分产生空隙的粘贴SOI衬底的问题，从而减少了从其导出的器件的数量。 本发明涉及制备通过在SiO 2表面和Si表面上粘贴具有SiO 2表面的第一Si衬底和具有Si表面的第二衬底而获得的SOI衬底的方法，该方法包括：将第二Si的Si表面 从而在将第一Si衬底和第二Si衬底粘贴在一起之前对Si表面赋予疏水性。

公开(公告)号：US06103598A

公开(公告)日：2000-08-15

申请号：US678694

申请日：1996-07-11

申请人： Kenji Yamagata ,  Takao Yonehara ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi

发明人： Kenji Yamagata ,  Takao Yonehara ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi

IPC分类号： H01L21/306 ,  H01L21/762

CPC分类号： H01L21/76256 ,  H01L21/0203 ,  H01L21/76243

摘要： A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.

摘要翻译： 提供一种制造半导体衬底的方法，其包括：通过使衬底硅多孔化和多孔硅层上外延生长的无孔单晶硅层，提供由其上形成有多孔硅层的硅制成的第一衬底，将第一衬底层压到 第二基板，其中第一和第二基板的至少一个层叠面具有氧化硅层，并且无孔单晶硅层插入在层压基板之间，并且通过蚀刻去除多孔硅层，其中多孔 通过蚀刻除去硅层，蚀刻剂以不大于10埃每分钟的蚀刻速率蚀刻无孔单晶硅层和氧化硅层。

公开(公告)号：US07550305B2

公开(公告)日：2009-06-23

申请号：US11874452

申请日：2007-10-18

申请人： Kenji Yamagata ,  Takao Yonehara ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

发明人： Kenji Yamagata ,  Takao Yonehara ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L33/20

摘要： An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.

摘要翻译： 本发明的目的是提供一种以比常规成本低的成本形成发光元件的方法，与常规的基板再循环方法相比，可以抑制由于热变形引起的基板的劣化，并且还具有 其效果与回收基材的方法相同。 通过在第一基板上依次生长分离层和发光层来形成发光元件的方法，将发光层接合到第二基板上，并且去除分离层以形成发光 包括在第一基板上生长各自包含分离层和发光层的多个基团; 将作为最上层存在的发光层图案化为岛状，然后将发光层接合到第二基板上，并且蚀刻与图案化为岛状的发光层相邻的分离层，以形成光 在第二基板上图案化成岛状的发光层。

公开(公告)号：US06309505B1

公开(公告)日：2001-10-30

申请号：US09037479

申请日：1998-03-10

申请人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

发明人： Toru Takisawa ,  Takao Yonehara ,  Kenji Yamagata

IPC分类号： B65G4907

CPC分类号： H01L21/68728 ,  H01L21/67092 ,  Y10T29/53191 ,  Y10T156/1744

摘要： One wafer is placed on a wafer support table with its frontside facing upward, and the other wafer is chucked by a wafer chuck portion with its frontside facing upward. The wafer chuck portion is pivoted about a shaft through about 180° to make the two wafers face each other substantially parallel. In response to the cancel of the chucking of the upper wafer by the wafer chuck portion, the central portion of the upper wafer is pressed by a press pin to superimpose the two wafers.

摘要翻译： 将一个晶片放置在晶片支撑台上，其前侧面向上，另一个晶片被其前侧朝上的晶片卡盘部分卡住。 晶片卡盘部分围绕轴枢转大约180°以使两个晶片彼此面对大致平行。 响应于通过晶片卡盘部分取消上晶片的夹持，上晶片的中心部分被压针按压以叠加两个晶片。

公开(公告)号：US06100166A

公开(公告)日：2000-08-08

申请号：US993034

申请日：1997-12-18

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida ,  Kenji Yamagata

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida ,  Kenji Yamagata

IPC分类号： B28D5/00 ,  G02F1/1362 ,  H01L21/18 ,  H01L21/20 ,  H01L21/304 ,  H01L21/66 ,  H01L31/068 ,  H01L31/18 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  B28D5/00 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/304 ,  H01L21/76254 ,  H01L22/00 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  G02F1/136277 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

公开(公告)号：US5466631A

公开(公告)日：1995-11-14

申请号：US392685

申请日：1995-02-23

申请人： Takeshi Ichikawa ,  Takao Yonehara ,  Masaru Sakamoto ,  Yasuhiro Naruse ,  Jun Nakayama ,  Kenji Yamagata ,  Kiyofumi Sakaguchi

发明人： Takeshi Ichikawa ,  Takao Yonehara ,  Masaru Sakamoto ,  Yasuhiro Naruse ,  Jun Nakayama ,  Kenji Yamagata ,  Kiyofumi Sakaguchi

IPC分类号： H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  H01L21/76

CPC分类号： H01L21/76264 ,  H01L21/30604 ,  H01L21/76256 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76289 ,  Y10S148/012 ,  Y10S438/96 ,  Y10S438/977

摘要： A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.

摘要翻译： 一种制造半导体产品的方法包括以下步骤：在多孔半导体区域上制备具有无孔半导体层的第一衬底，在所述第一衬底的所述半导体层侧的表面上形成凹凸; 将形成有所述凹凸的所述第一基板的表面接合到所述第二基板的表面以彼此接触，并且在所述半导体层接合到所述第二基板的状态下去除所述多孔半导体，从而转移 所述半导体层从所述第一衬底到所述第二衬底上。

公开(公告)号：US5250460A

公开(公告)日：1993-10-05

申请号：US958724

申请日：1992-10-09

申请人： Kenji Yamagata ,  Takao Yonehara

发明人： Kenji Yamagata ,  Takao Yonehara

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  H01L31/18 ,  H01L21/76

CPC分类号： H01L21/76256 ,  H01L21/0203 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/76251 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/15

摘要： A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO.sub.2 as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched.