公开(公告)号：US07852270B2

公开(公告)日：2010-12-14

申请号：US12203547

申请日：2008-09-03

申请人： Atsushi Yamada ,  Keisuke Satoh ,  Hiroki Tanaka

发明人： Atsushi Yamada ,  Keisuke Satoh ,  Hiroki Tanaka

IPC分类号： H01Q1/38

CPC分类号： H01Q13/02 ,  H01Q19/062 ,  H01Q21/0025

摘要： A wireless communication device including an antenna-integrated module which realizes a high-end antenna having an improved antenna efficiency includes a mounting board having a through hole whose cross-sectional shape is rectangular; and an antenna-integrated module mounted on the mounting board so as to cover over the through hole, a patch antenna, which radiates radiation wave, being provided on a surface of the antenna-integrated module, which surface is exposed in the through hole, an annular grounding sheet being provided between the antenna-integrated module and the mounting board so as to surround the patch antenna, and the through hole having a longer side whose length satisfies λ/2≦a≦λ, where λ is a wavelength of the radiation wave.

摘要翻译： 包括实现具有改善的天线效率的高端天线的天线集成模块的无线通信装置包括具有截面形状为矩形的通孔的安装板， 以及安装在安装板上以覆盖通孔的天线集成模块，辐射辐射波的贴片天线设置在天线集成模块的表面上，该表面暴露在通孔中， 环形接地片设置在天线集成模块和安装板之间以围绕贴片天线，并且通孔具有长度满足λ/ 2和nlE的长边; a＆nlE;λ，其中λ是波长 辐射波。

公开(公告)号：US07813398B2

公开(公告)日：2010-10-12

申请号：US12067601

申请日：2006-09-27

申请人： Hiroshi Mori ,  Atsushi Yamada ,  Takahiro Samejima

发明人： Hiroshi Mori ,  Atsushi Yamada ,  Takahiro Samejima

IPC分类号： H01S5/00

CPC分类号： H01S5/227 ,  H01L33/0045 ,  H01S5/02284 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1085 ,  H01S5/14 ,  H01S5/141 ,  H01S5/142 ,  H01S5/143 ,  H01S5/146

摘要： The present invention provides a semiconductor optical element applicable to an EC-LD or an SLD, and an external cavity laser having the semiconductor optical element. The semiconductor optical element has a pair of cleavage surfaces, and comprises a semiconductor substrate 11 having a base surface and a planer structure provided on the base surface and provided with a waveguide 1G having an active layer. The waveguide 1G has an end surface with low reflectivity and another end surface with certain reflectivity. The waveguide 1G includes an end portion having a first optical axis in the vicinity of the first end surface 1TL and an end portion having a second optical axis in the vicinity of the second end surface 1TH, the first optical axis being inclined at a first angle ΦL other than zero degree with respect to a normal to the first end surface 1TL, the second optical axis being inclined at a second angle ΦH other than zero degree with respect to a normal to the second end surface 1TH, the first angle ΦL being different from the second angle ΦH. The end portion of the waveguide 1G is different in width from the other end portion of the waveguide 1G.

摘要翻译： 本发明提供一种适用于EC-LD或SLD的半导体光学元件和具有该半导体光学元件的外部空腔激光器。 半导体光学元件具有一对解理面，并且包括具有基面的半导体基板11和设置在基面上的平面结构，并设置有具有有源层的波导管1G。 波导1G具有低反射率的端面和具有一定反射率的另一端面。 波导管1G包括在第一端面1TL附近具有第一光轴的端部和在第二端面1TH附近具有第二光轴的端部，第一光轴以第一角度倾斜 ΦL相对于第一端面1TL的法线为零度以下，第二光轴相对于第二端面1TH的法线倾斜成零度以外的第二角度ΦH，第一角度ΦL不同 从第二角度ΦH。 波导1G的端部宽度与波导管1G的另一端部不同。

公开(公告)号：US20100163928A1

公开(公告)日：2010-07-01

申请号：US12618384

申请日：2009-11-13

申请人： Tadahiro Imada ,  Atsushi Yamada

发明人： Tadahiro Imada ,  Atsushi Yamada

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/0619 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7832

摘要： An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are provided. A recess portion is formed inside an area between the source electrode and the drain electrode of the n-GaN layer (compound semiconductor layer) and at a portion separating from the gate electrode.

摘要翻译： 在i-GaN层（电子传输层）上形成的i-GaN层（电子迁移层），n-GaN层（化合物半导体层）以及形成在n-GaN层上的源电极，漏电极和栅电极 -GaN层（化合物半导体层）。 在n-GaN层（化合物半导体层）的源电极和漏电极之间的区域内以及与栅电极分离的部分的内部形成有凹部。

公开(公告)号：US07522022B2

公开(公告)日：2009-04-21

申请号：US10535948

申请日：2003-11-18

申请人： Atsushi Yamada

发明人： Atsushi Yamada

IPC分类号： H03H7/00 ,  H01P3/08

CPC分类号： H01P1/20372 ,  H01P1/20381

摘要： A planar filter has first and second U-shaped open transmission line resonators (103, 105) and a crank-shaped open transmission line resonator (104), so that it is possible to decrease an area to be virtually occupied by the filter on a dielectric substrate (110) and enhance the attenuation characteristic.

摘要翻译： 平面滤波器具有第一和第二U形开放传输线谐振器（103,105）和曲柄形开放传输线谐振器（104），使得可以减少由滤波器实际占据的面积 电介质基板（110）并增强衰减特性。

公开(公告)号：US07483470B2

公开(公告)日：2009-01-27

申请号：US10553161

申请日：2005-03-15

申请人： Yasuaki Nagashima ,  Atsushi Yamada ,  Yoshiharu Shimose ,  Tomoyuki Kikugawa

发明人： Yasuaki Nagashima ,  Atsushi Yamada ,  Yoshiharu Shimose ,  Tomoyuki Kikugawa

IPC分类号： H01S3/098 ,  H01S3/08

CPC分类号： G02B6/4202 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/028 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34306 ,  H01S5/34326 ,  H01S2301/185

摘要： A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 μm on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber.

摘要翻译： 半导体激光器包括由InP构成的基板，在基板上形成为宽度为7〜14μm的n型包层，以及由InGaAsP和p型包层构成的n型包层的包括多量子阱结构的有源层 由InP制成的层，它们形成在衬底上，其间插入有源层。 半导体激光器仅在基本横向模式下振荡，并且从出射小面发射的光可以与外部单模光纤光学耦合。

公开(公告)号：US20060285560A1

公开(公告)日：2006-12-21

申请号：US10553161

申请日：2005-03-15

申请人： Yasuaki Nagashima ,  Atsushi Yamada ,  Yoshiharu Shimon ,  Tomoyuki Kikugawa

发明人： Yasuaki Nagashima ,  Atsushi Yamada ,  Yoshiharu Shimon ,  Tomoyuki Kikugawa

IPC分类号： H01S3/098 ,  H01S5/00 ,  H01S3/08

CPC分类号： G02B6/4202 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/028 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34306 ,  H01S5/34326 ,  H01S2301/185

摘要： A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 μm on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber.

公开(公告)号：US07116549B2

公开(公告)日：2006-10-03

申请号：US11347714

申请日：2006-02-03

申请人： Naoki Anzai ,  Shogo Aizawa ,  Tomohiro Matsuzaki ,  Norihito Fukui ,  Atsushi Yoshizawa ,  Hidehiko Itoh ,  Atsushi Yamada ,  Katsumi Abe

发明人： Naoki Anzai ,  Shogo Aizawa ,  Tomohiro Matsuzaki ,  Norihito Fukui ,  Atsushi Yoshizawa ,  Hidehiko Itoh ,  Atsushi Yamada ,  Katsumi Abe

IPC分类号： H01G4/32 ,  H01G9/04 ,  H01G9/02

CPC分类号： H01G9/028 ,  H01G9/0036 ,  H01G9/02 ,  H01G9/151 ,  Y10T29/417

摘要： A cathode foil and an anode foil, with an oxidized film layer formed on the surface and a separator interposed therebetween, are wound together to form a capacitor element, and prior to subjecting the capacitor element to chemical repair the content of the binder in the separator is adjusted to 10 to 20% with respect to the total weight of the separator. After the chemical repair, the capacitor element is immersed in mixed liquid prepared by mixing a polymerizable monomer and an oxidizing agent together with a predetermined solvent, a polymerization reaction of the electroconductive polymer is induced in the capacitor element, and a solid electrolyte layer is formed. The capacitor element is then inserted in an outer case; sealing rubber is mounted in the open-end portion and sealed with a tightening operation; and the unit is thereafter aged to form a solid electrolytic capacitor.

公开(公告)号：US20060131493A1

公开(公告)日：2006-06-22

申请号：US11316402

申请日：2005-12-22

申请人： Yoshihito Narita ,  Shigeyuki Kimura ,  Fuminori Sato ,  Atsushi Yamada

发明人： Yoshihito Narita ,  Shigeyuki Kimura ,  Fuminori Sato ,  Atsushi Yamada

IPC分类号： H01J40/14

CPC分类号： G01Q60/22

摘要： A near field analysis apparatus comprising: an irradiation optical system comprising an irradiation-side adjustable optical system for adjusting the position or angle of an optical axis thereof, and irradiating irradiation-side guide light onto an adjustment surface via the irradiation-side adjustable optical system; a light collecting optical system comprising a light-collection-side adjustable optical system for adjusting the position or angle of an optical axis thereof, and irradiating light-collection-side guide light onto the adjustment surface via the light-collection-side adjustable optical system; an irradiation-side adjustment device for adjusting the position or angle of the irradiation-side adjustable optical system such that the spots of the guide light, which are observed at the adjustment surface, match; and a light-collection-side adjustment device for adjusting the position or angle of the light-collection-side adjustable optical system such that the spots of the guide light, which are observed at the adjustment surface, match.

摘要翻译： 一种近场分析装置，包括：照射光学系统，包括用于调节其光轴的位置或角度的照射侧可调节光学系统，并且经由照射侧可调节光学系统将照射侧引导光照射到调整表面上 ; 光收集光学系统，包括用于调节其光轴的位置或角度的采光侧可调光学系统，以及经由采光侧可调节光学系统将光收集侧引导光照射到调节表面上 ; 照射侧调节装置，用于调节照射侧可调节光学系统的位置或角度，使得在调节表面观察到的引导光点相匹配; 以及采集侧调整装置，其用于调整所述收光侧可调光学系统的位置或角度，使得在所述调整面观察到的所述引导光的光斑匹配。

公开(公告)号：US07027292B2

公开(公告)日：2006-04-11

申请号：US10509550

申请日：2003-03-28

申请人： Naoki Anzai ,  Shogo Aizawa ,  Tomohiro Matsuzaki ,  Norihito Fukui ,  Atsushi Yoshizawa ,  Hidehiko Itoh ,  Atsushi Yamada ,  Katsumi Abe

发明人： Naoki Anzai ,  Shogo Aizawa ,  Tomohiro Matsuzaki ,  Norihito Fukui ,  Atsushi Yoshizawa ,  Hidehiko Itoh ,  Atsushi Yamada ,  Katsumi Abe

IPC分类号： H01G4/32 ,  H01G9/04 ,  H01G9/02

CPC分类号： H01G9/028 ,  H01G9/0036 ,  H01G9/02 ,  H01G9/151 ,  Y10T29/417

摘要： Negative electrode foil and positive electrode foil having an oxide coating layer formed on the surface thereof with a separator, the separator containing a binder constituted of a compound having a vinyl group, interposed therebetween are wound up to thereby form a capacitor element. The content of binder in the separator is adjusted to 10–20% based on the total weight of separator before subjecting the capacitor element to restoration and chemical conversion. After the restoration and chemical conversion, the capacitor element is immersed in a liquid mixture prepared by mixing a polymerizable monomer, an oxidizer and a given solvent together so that polymerization reaction of conductive polymer is effected in the capacitor element to thereby form a solid electrolyte layer. The thus obtained capacitor element is inserted in a sheath case, and its opening end is fitted with sealing rubber. Sealing is accomplished by fastening operation, and aging is performed. Thus, a solid electrolytic capacitor is obtained.

摘要翻译： 在其表面上形成有隔膜的负极箔和正极箔，其中含有由具有乙烯基的化合物构成的粘结剂的隔膜夹在中间，从而形成电容器元件。 在对电容器元件进行恢复和化学转化之前，将隔板中的粘合剂的含量基于隔板的总重量调节至10-20％。 在恢复和化学转化后，将电容器元件浸入通过将可聚合单体，氧化剂和给定溶剂混合在一起而制备的液体混合物中，使得在电容器元件中进行导电聚合物的聚合反应，从而形成固体电解质层 。 将如此获得的电容器元件插入护套壳体中，其开口端装有密封橡胶。 通过紧固操作实现密封，并进行老化。 因此，得到固体电解电容器。

公开(公告)号：US06987285B2

公开(公告)日：2006-01-17

申请号：US10692125

申请日：2003-10-23

申请人： Yasuaki Nagashima ,  Yoshiharu Shimose ,  Atsushi Yamada ,  Tomoyuki Kikugawa

发明人： Yasuaki Nagashima ,  Yoshiharu Shimose ,  Atsushi Yamada ,  Tomoyuki Kikugawa

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： B82Y20/00 ,  H01S5/2004 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/3409

摘要： The semiconductor light emitting device includes a semiconductor substrate formed from InP, an active layer, an n-type cladding layer formed from InGaAsP, and a p-type cladding layer formed from InP. The active layer is formed at the upper side of the semiconductor substrate. The n-type cladding layer and the p-type cladding layer are formed so as to hold the active layer therebetween. The semiconductor light emitting device is, given that, a refractive index of the n-type cladding layer is na, and a refractive index of the p-type cladding layer is nb, set so as to be the relationship of na>nb in which the refractive index na of the n-type cladding layer is higher than the refractive index nb of the p-type cladding layer, and due to the distribution of light generated by the active layer being deflected to the n-type cladding layer side, optical loss by intervalence band light absorption at the p-type cladding layer is suppressed, and high-power light output can be obtained.

摘要翻译： 半导体发光器件包括由InP形成的半导体衬底，有源层，由InGaAsP形成的n型覆层，以及由InP形成的p型覆层。 有源层形成在半导体衬底的上侧。 形成n型包覆层和p型包覆层，以将活性层保持在其间。 假定n型包覆层的折射率为na，p型包覆层的折射率为nb，则为半导体发光元件，其设定为na> nb的关系，其中 n型包覆层的折射率na高于p型包层的折射率nb，由于由有源层产生的光被分散到n型包层侧，所以光学 抑制p型包覆层的间隔带光吸收的损失，能够获得高功率光输出。