公开(公告)号：US10668885B2

公开(公告)日：2020-06-02

申请号：US15816502

申请日：2017-11-17

申请人： Seiji Hioda ,  Yoshinori Beppu ,  Atsushi Yamada ,  Takuya Sudo

发明人： Seiji Hioda ,  Yoshinori Beppu ,  Atsushi Yamada ,  Takuya Sudo

IPC分类号： B60R21/21 ,  B60R21/2165 ,  B60R21/239 ,  B60R21/231 ,  B60R21/215 ,  B60R21/00 ,  B60R21/235 ,  B60R21/23 ,  B60R21/233

摘要： A side airbag device for a rear seat relating to the technique of the present disclosure includes: an airbag module that is provided at an interior of a side garnish that is disposed between a vehicle body side portion and a vehicle transverse direction outer side of a seatback of a rear seat; a tubular flow regulating cloth that is provided at an interior of a side airbag of the airbag module, at a periphery of an inflator; and an airbag door that is provided at the side garnish, and that has a hinge portion and a tear portion at a periphery thereof, and that is pushed by the tubular flow regulating cloth when gas is generated from the inflator, wherein the tubular flow regulating cloth has openings at both ends thereof, and has exhaust holes in a peripheral wall thereof.

公开(公告)号：US20180194318A1

公开(公告)日：2018-07-12

申请号：US15816502

申请日：2017-11-17

申请人： Seiji Hioda ,  Yoshinori Beppu ,  Atsushi Yamada ,  Takuya Sudo

发明人： Seiji Hioda ,  Yoshinori Beppu ,  Atsushi Yamada ,  Takuya Sudo

IPC分类号： B60R21/21 ,  B60R21/2165 ,  B60R21/239 ,  B60R21/231

摘要： A side airbag device for a rear seat relating to the technique of the present disclosure includes: an airbag module that is provided at an interior of a side garnish that is disposed between a vehicle body side portion and a vehicle transverse direction outer side of a seatback of a rear seat; a tubular flow regulating cloth that is provided at an interior of a side airbag of the airbag module, at a periphery of an inflator; and an airbag door that is provided at the side garnish, and that has a hinge portion and a tear portion at a periphery thereof, and that is pushed by the tubular flow regulating cloth when gas is generated from the inflator, wherein the tubular flow regulating cloth has openings at both ends thereof, and has exhaust holes in a peripheral wall thereof.

公开(公告)号：US09334211B2

公开(公告)日：2016-05-10

申请号：US14239863

申请日：2012-08-22

申请人： Kiyotaka Yoshii ,  Atsushi Yamada

发明人： Kiyotaka Yoshii ,  Atsushi Yamada

IPC分类号： C07C29/10 ,  C10G47/10 ,  C10G47/04 ,  C07C29/132 ,  B01J37/10 ,  B01J23/46 ,  B01J23/652 ,  B01J23/89 ,  B01J23/68 ,  B01J23/656

CPC分类号： C07C29/103 ,  B01J23/464 ,  B01J23/468 ,  B01J23/6525 ,  B01J23/6527 ,  B01J23/6567 ,  B01J23/688 ,  B01J23/8986 ,  B01J37/10 ,  C07C29/132 ,  C10G47/04 ,  C10G47/10 ,  C07C31/20

摘要： The present invention provides a hydrocracking catalyst obtainable by mixing a metal compound (A) including any one metal of Groups 3 to 11 of the Periodic Table, a compound (B) including at least one compound selected from the group consisting of a ruthenium oxide compound (B1) and a high-valence compound (B2) including any metal of Groups 8 to 11 of the Periodic Table, and a metal oxide (C) including a metal of Group 5, Group 6 or Group 7 of the Periodic Table, and conducting reduction treatment.

摘要翻译： 本发明提供一种加氢裂化催化剂，其通过将包含元素周期表第3〜11族的金属化合物（A），包含至少一种选自氧化钌化合物 （B1）和包含元素周期表第8〜11族金属的高价化合物（B2）和包含元素周期表第5族，第6族或第7族金属的金属氧化物（C），以及 进行还原处理。

公开(公告)号：US08963164B2

公开(公告)日：2015-02-24

申请号：US13301331

申请日：2011-11-21

申请人： Sanae Shimizu ,  Kenji Imanishi ,  Atsushi Yamada ,  Toyoo Miyajima

发明人： Sanae Shimizu ,  Kenji Imanishi ,  Atsushi Yamada ,  Toyoo Miyajima

IPC分类号： H01L29/16 ,  H01L29/778 ,  H01L21/02 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/66462

摘要： A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less.

摘要翻译： 一种化合物半导体器件，包括：衬底; 形成在所述基板上的电子转移层; 形成在电子转移层上的电子供应层; 以及形成在所述基板和所述电子转移层之间并且包括Al x Ga 1-x N（0＆lt; n 1; x＆n 1; 1）的缓冲层，其中所述x值表示所述缓冲层的厚度方向上的多个最大值和多个最小值 并且在缓冲层中具有1nm厚度的任何区域中的x的变化为0.5以下。

公开(公告)号：US08955874B2

公开(公告)日：2015-02-17

申请号：US13980163

申请日：2012-01-17

申请人： Minhun Kim ,  Jinhua Piao ,  Atsushi Yamada

发明人： Minhun Kim ,  Jinhua Piao ,  Atsushi Yamada

IPC分类号： B60R21/213 ,  B60R21/16 ,  B60R21/237

CPC分类号： B60R21/213 ,  B60R21/237 ,  B60R2021/161

摘要： A cover used for an airbag device capable of accurately and easily adjusting a deployment direction of an airbag during a side collision according to a deployment position. The cover includes a protecting portion formed along a rolled airbag, and a plurality of attachment portions formed so as to be attached to a body of a vehicle. The protecting portion includes a slit capable of controlling the deployment direction of the airbag by changing a position through which the tab passes toward the body of the vehicle in a rolling direction of the airbag.

摘要翻译： 一种用于安全气囊装置的盖子，其能够根据展开位置在侧面碰撞期间准确且容易地调整气囊的展开方向。 所述盖包括沿着滚动的安全气囊形成的保护部分，以及形成为附接到车辆本体的多个附接部分。 保护部包括能够通过改变突片在气囊的滚动方向上朝向车身行进的位置的变化来控制安全气囊的展开方向的狭缝。

公开(公告)号：US08933543B2

公开(公告)日：2015-01-13

申请号：US13503972

申请日：2011-03-15

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

IPC分类号： H01L33/16 ,  H01L21/02 ,  H01L33/40 ,  H01L23/532 ,  H01L33/00 ,  H01L33/32 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L21/02579 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L23/53247 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/13 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341 ,  H01L2924/00

摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面倾斜不小于1°的角度， 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。

公开(公告)号：US08921868B2

公开(公告)日：2014-12-30

申请号：US13315682

申请日：2011-12-09

申请人： Atsushi Yamada

发明人： Atsushi Yamada

IPC分类号： H01L29/772 ,  H01L29/66 ,  H01L29/778 ,  H01L21/28 ,  H01L29/20

摘要： A semiconductor device includes: a semiconductor layer disposed above a substrate; an insulating film formed by oxidizing a portion of the semiconductor layer; and an electrode disposed on the insulating film, wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide.

公开(公告)号：US08878248B2

公开(公告)日：2014-11-04

申请号：US13544023

申请日：2012-07-09

申请人： Tetsuro Ishiguro ,  Atsushi Yamada

发明人： Tetsuro Ishiguro ,  Atsushi Yamada

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/778 ,  H01L29/66 ,  H01L29/10 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device includes a first semiconductor layer formed on a substrate, the first semiconductor containing an impurity element; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; and a gate electrode, a source electrode and a drain electrode that are formed on the third semiconductor layer. In the semiconductor device, the second semiconductor layer includes an impurity diffusion region in which an impurity element contained in the first semiconductor layer is diffused, the impurity diffusion region being located directly beneath the gate electrode and being in contact with the first semiconductor layer, and the impurity element causes the impurity diffusion region to be a p-type impurity diffusion region.

摘要翻译： 半导体器件包括形成在衬底上的第一半导体层，第一半导体含有杂质元素; 形成在所述第一半导体层上的第二半导体层; 形成在所述第二半导体层上的第三半导体层; 以及形成在第三半导体层上的栅电极，源电极和漏电极。 在半导体器件中，第二半导体层包括杂质扩散区，其中包含在第一半导体层中的杂质元素扩散，杂质扩散区位于栅电极正下方并与第一半导体层接触， 杂质元素使杂质扩散区域成为p型杂质扩散区域。

公开(公告)号：US08729587B2

公开(公告)日：2014-05-20

申请号：US13596849

申请日：2012-08-28

申请人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

发明人： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

IPC分类号： H01L33/30 ,  H01L33/50

CPC分类号： H01L33/40 ,  B82Y20/00 ,  H01L29/045 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/32341

摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.

摘要翻译： 示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多 超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。 电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。

公开(公告)号：US08669592B2

公开(公告)日：2014-03-11

申请号：US13551775

申请日：2012-07-18

申请人： Toyoo Miyajima ,  Kenji Imanishi ,  Atsushi Yamada ,  Norikazu Nakamura

发明人： Toyoo Miyajima ,  Kenji Imanishi ,  Atsushi Yamada ,  Norikazu Nakamura

IPC分类号： H01L29/66

CPC分类号： H01L29/045 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7787

摘要： A compound semiconductor multilayer structure is formed on a Si substrate. The compound semiconductor multilayer structure includes an electrode transit layer, an electrode donor layer formed above the electron transit layer, and a cap layer formed above the electron donor layer. The cap layer contains a first crystal polarized in the same direction as the electron transit layer and the electron donor layer and a second crystal polarized in the direction opposite to the polarization direction of the electron transit layer and the electron donor layer.

摘要翻译： 在Si衬底上形成化合物半导体多层结构。 化合物半导体多层结构包括电极转移层，形成在电子转移层上方的电极施主层和形成在电子供体层上方的覆盖层。 盖层包含沿与电子转移层和电子供体层相同的方向偏振的第一晶体和在与电子转移层和电子供体层的偏振方向相反的方向偏振的第二晶体。