公开(公告)号：US20120304485A1

公开(公告)日：2012-12-06

申请号：US13482318

申请日：2012-05-29

申请人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

发明人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

IPC分类号： F26B7/00

CPC分类号： H01L21/67028 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/02101

摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

摘要翻译： 一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。 基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷， 将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。

公开(公告)号：US20140250714A1

公开(公告)日：2014-09-11

申请号：US14283874

申请日：2014-05-21

申请人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazayuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazayuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： H01L21/02

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US08372212B2

公开(公告)日：2013-02-12

申请号：US13369970

申请日：2012-02-09

申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B3/04

CPC分类号： F26B3/02

摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。

公开(公告)号：US20120132230A1

公开(公告)日：2012-05-31

申请号：US13301936

申请日：2011-11-22

申请人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

发明人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

IPC分类号： B08B3/04 ,  B08B3/02 ,  B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/04 ,  H01L21/02101 ,  H01L21/67017 ,  H01L21/6719

摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。

公开(公告)号：US20070134431A1

公开(公告)日：2007-06-14

申请号：US11606930

申请日：2006-12-01

申请人： Kenichi Hara ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Takehiko Orii

发明人： Kenichi Hara ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Takehiko Orii

IPC分类号： B05D5/12 ,  B05D1/18 ,  B05C5/00

CPC分类号： H01L21/68728 ,  C23C18/1619 ,  C23C18/1628 ,  H01L21/6715 ,  H01L21/6723

摘要： An electroless plating apparatus performs electroless plating on a wiring portion with a plating solution using a reducer having low reduction power. The electroless plating apparatus includes a support member with a conductive portion, which supports a substrate; a plating-solution feeding mechanism which feeds the plating solution to a top surface of the substrate supported by the support member; a metal member which is provided at the support member in such a way as to be contactable to the plating solution and dissolves into the plating solution when in contact therewith to thereby generate electrons; and an electron supply passage which supplies the electrons generated by the dissolved metal member to the wiring portion on the substrate via the conductive portion of the support member.

摘要翻译： 无电解电镀装置使用具有低还原能力的还原剂在具有电镀液的布线部分上进行无电镀。 无电解电镀装置包括：支撑构件，其具有导电部分，其支撑基板; 电镀液供给机构，其将所述电镀液供给到由所述支撑部件支撑的所述基板的上表面; 金属构件，其设置在所述支撑构件上，以便能够与所述电镀液接触，并且在与所述电镀液接触时溶解到所述电镀液中，从而产生电子; 以及电子供给路径，其经由所述溶解金属构件产生的电子经由所述支撑构件的导电部向所述基板上的配线部供给。

公开(公告)号：US09236280B2

公开(公告)日：2016-01-12

申请号：US13301936

申请日：2011-11-22

申请人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

发明人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Yuji Kamikawa ,  Mikio Nakashima

IPC分类号： B08B3/04 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  B08B3/04 ,  H01L21/02101 ,  H01L21/67017 ,  H01L21/6719

摘要： Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

摘要翻译： 公开了一种基板处理装置，其包括处理容器，其中通过使用超临界状态或亚临界状态的高压流体处理目标基板W，以及分割成第一管构件和第二管构件的管 流体的流动方向和流体循环连接到处理容器。 连接/断开机构将第一和第二管件中的至少一个移动到第一管件和第二管件之间的连接位置和分离位置之间，并且开/关阀安装在第一和第二管件中的每一个中，并且 在分离管件时关闭。

公开(公告)号：US08771429B2

公开(公告)日：2014-07-08

申请号：US13420870

申请日：2012-03-15

申请人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B7/00

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US09777379B2

公开(公告)日：2017-10-03

申请号：US14129698

申请日：2012-06-04

申请人： Yuichiro Inatomi ,  Takashi Tanaka ,  Mitsuaki Iwashita

发明人： Yuichiro Inatomi ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC分类号： B05D3/10 ,  C23C18/16 ,  C23C18/18

CPC分类号： C23C18/163 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1655 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/18 ,  C23C18/50 ,  H05K3/187 ,  H05K2203/0165 ,  H05K2203/072 ,  H05K2203/075

摘要： A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. Further, the discharging device 21 includes a first nozzle 40 having a multiple number of discharge openings 41 arranged in a radial direction of the substrate 2 or having a discharge opening 42 extended in the radial direction of the substrate 2; and a second nozzle 45 having a discharge opening 46 configured to be positioned closer to a central portion of the substrate 2 than the discharge opening of the first nozzle 40.

公开(公告)号：US20050214683A1

公开(公告)日：2005-09-29

申请号：US11064088

申请日：2005-02-24

申请人： Eiichi Nishimura ,  Takashi Tanaka ,  Gen You ,  Minoru Honda ,  Mitsuaki Iwashita

发明人： Eiichi Nishimura ,  Takashi Tanaka ,  Gen You ,  Minoru Honda ,  Mitsuaki Iwashita

IPC分类号： G03F7/40 ,  A61N5/00 ,  G03C5/00 ,  G21G5/00 ,  H01L21/027

CPC分类号： G03F7/40

摘要： In a film reforming method for reforming a film layer to be reformed by irradiating electron beams thereon, the electron beams are irradiated in a state where the film layer is cooled. Further, in a slimming amount controlling method for controlling a slimming amount of a resist film layer, the slimming amount thereof is controlled by the irradiation amount of electron beams irradiated thereon in a state where the resist film layer having a specified opening dimension is cooled. Furthermore, in a film reforming apparatus including a mounting unit for mounting thereon an object to be processed and an electron beam irradiating unit for irradiating electron beams on the object disposed on the mounting unit to thereby reform a film layer to be reformed, formed on an object, the electron beams are irradiated from the electron beam irradiating unit in a state where the film layer is cooled by a cooling unit provided in the mounting unit.

摘要翻译： 在通过在其上照射电子束来重整薄膜层的薄膜重整方法中，在薄膜层被冷却的状态下照射电子束。 此外，在用于控制抗蚀剂膜层的减肥量的减肥量控制方法中，在具有指定的开口尺寸的抗蚀剂膜层被冷却的状态下，通过照射在其上的电子束的照射量来控制其减肥量。 此外，在包括用于在其上安装待处理物体的安装单元和用于在设置在安装单元上的物体上照射电子束的电子束照射单元的薄膜重整设备中，从而将形成在其上的膜层重新形成 在由设置在安装单元中的冷却单元冷却膜层的状态下，从电子束照射单元照射电子束。

公开(公告)号：US20150303103A1

公开(公告)日：2015-10-22

申请号：US14343509

申请日：2012-08-08

申请人： Shoso Shinguhara ,  Fumihiro Inoue ,  Hiroshi Miyake ,  Ryohei Arima ,  Mitsuaki Iwashita ,  Takashi Tanaka

发明人： Shoso Shinguhara ,  Fumihiro Inoue ,  Hiroshi Miyake ,  Ryohei Arima ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC分类号： H01L21/768 ,  C23C18/16

CPC分类号： H01L21/76874 ,  C23C18/1608 ,  C23C18/1619 ,  C23C18/1806 ,  C23C18/1831 ,  H01L21/288 ,  H01L21/76898

摘要： A catalyst adsorption method can sufficiently adsorb a catalyst to a lower portion of a recess formed in a substrate. A substrate 20 in which a recess 22 is formed is prepared. Then, a catalyst 23 formed of nanoparticles coated with a dispersant is adsorbed to a surface of the substrate 20 by bringing the substrate 20 into contact with a catalyst solution 12 containing the catalyst by a catalyst adsorption device 10. At that time, a high frequency vibration is applied to the catalyst solution 12.

摘要翻译： 催化剂吸附方法可以将催化剂充分地吸附到形成在基板中的凹部的下部。 准备形成有凹部22的基板20。 然后，通过使催化剂吸附装置10使基板20与含有催化剂的催化剂溶液12接触，将由分散剂涂布的纳米粒子形成的催化剂23吸附在基板20的表面。此时， 对催化剂溶液12施加振动。