公开(公告)号：US4992403A

公开(公告)日：1991-02-12

申请号：US394560

申请日：1989-08-16

申请人： Yasuhito Takahashi ,  Tomio Kawaguchi ,  Shigeru Sakai

发明人： Yasuhito Takahashi ,  Tomio Kawaguchi ,  Shigeru Sakai

IPC分类号： B01J37/20 ,  C10G49/04

CPC分类号： B01J37/20 ,  C10G49/04

摘要： Catalysts for hydrotreating hydrocarbons are composed of a carrier substance consisting essentially of an oxide of aluminum and/or an oxide hydrate of aluminum, at least one compound selected from water-soluble compounds of metals of Group VI and Group VIII of the Periodic Table and at least one organic compound selected from mercapto-carboxylic acids of formula HS--(CH.sub.2).sub.n --COOR (where n is 1 to 3; R is H, alkali metal, alkaline earth metal or ammonium group or alkyl group with 1-10 carbons), thio-acids of formula R'--COSH (where R' is monovalent hydrocarbon with 1-15 carbons), amino-substituted mercaptans of formula H.sub.2 N--R"--SH (R" is divalent hydrocarbon with 1-15 carbons), dimercaptans of formula HS--R"--SH (R" is same as above) and mercapto-alcohols of formula (R.sup.a S--R"'--(OH).sub.n (where R"' is hydrocarbon with 1-15 carbons; R.sup.a is H or alkyl group with 1-2 carbons; and n is 1-2), and optionally phosphoric acid. The catalysts require neither presulfurization nor heat-treatment and can be directly applied to hydrotreating hydrocarbons.

公开(公告)号：US4747110A

公开(公告)日：1988-05-24

申请号：US829090

申请日：1986-02-13

申请人： Yasuhito Takahashi ,  Mototsugu Ogura ,  Nobuyasu Hase

发明人： Yasuhito Takahashi ,  Mototsugu Ogura ,  Nobuyasu Hase

IPC分类号： H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/40 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/4031 ,  H01S5/2238 ,  H01S5/3203 ,  H01S5/3413 ,  H01S5/4037 ,  H01S5/4087

摘要： A semiconductor laser device has a compound semiconductor substrate, a first semiconductor layer disposed on the compound semiconductor substrate, and a second semiconductor layer disposed on the first semiconductor layer. The second semiconductor layer has at least three thin film layers of at least two different semiconductor compounds, the film layers being laminated with the different semiconductor compound layers alternating. An electrically isolating region extends through the thickness of the second semiconductor layer and electrically divides the second semiconductor layer into first and second portions which differ in quantum level from each other. A third semiconductor layer is disposed on the second semiconductor layer, and first and second electrodes are disposed on the third semiconductor layer in positions for supplying current to the first and second portions, respectively, and a third electrode is disposed on the substrate at the surface thereof opposite to the first and second electrodes. When a voltage is applied between the third and first electrodes and the third and second electrodes, laser beams having different wavelengths are emitted from the first and second portions of the second semiconductor layer, respectively.

摘要翻译： 半导体激光器件具有化合物半导体衬底，设置在化合物半导体衬底上的第一半导体层和设置在第一半导体层上的第二半导体层。 第二半导体层具有至少三个至少两个不同半导体化合物的薄膜层，膜层与不同的半导体化合物层交替层叠。 电绝缘区域延伸穿过第二半导体层的厚度，并且将第二半导体层电分离成彼此不同的量子水平的第一和第二部分。 第三半导体层设置在第二半导体层上，并且第一和第二电极分别设置在第三半导体层上用于向第一和第二部分提供电流的位置，第三电极设置在基板上的表面 其与第一和第二电极相对。 当在第三和第一电极和第三和第二电极之间施加电压时，分别从第二半导体层的第一和第二部分发射具有不同波长的激光束。

公开(公告)号：US08231726B2

公开(公告)日：2012-07-31

申请号：US12161393

申请日：2007-01-19

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Yasutoshi Kawaguchi ,  Yasuhito Takahashi ,  Yoshiaki Hasegawa

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Yasutoshi Kawaguchi ,  Yasuhito Takahashi ,  Yoshiaki Hasegawa

IPC分类号： H01L33/30 ,  C30B19/02 ,  C30B19/04

CPC分类号： H01S5/32341 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/22 ,  H01S5/305

摘要： An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm−3. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.

摘要翻译： 本发明的目的是为了获得使用III族氮化物半导体衬底的半导体发光元件，通过选择特定的衬底掺杂剂并控制其浓度来获得具有优异的光提取性能的半导体发光元件 。 半导体发光元件包括由包含锗（Ge）作为掺杂剂的III族氮化物半导体构成的衬底，由形成在衬底上的III族氮化物半导体构成的n型半导体层，由组 形成在n型半导体层上的III族氮化物半导体以及形成在有源层上形成的III族氮化物半导体的p型半导体层，其中基板的锗（Ge）浓度为2×1017〜2×1019 cm-3。 使用包含至少III族元素，碱金属或碱土金属和锗（Ge）和氮的熔体在含氮气氛中生产基材。

公开(公告)号：US07435295B2

公开(公告)日：2008-10-14

申请号：US10598095

申请日：2005-02-18

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Yasuhito Takahashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Yasuhito Takahashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B25/12

CPC分类号： C30B29/406 ,  C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B19/064 ,  Y10T117/1016

摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.

摘要翻译： 本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。 在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。 通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。 此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。 因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

公开(公告)号：US20080037100A1

公开(公告)日：2008-02-14

申请号：US11571218

申请日：2005-06-29

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Takayuki Negami ,  Yasuhito Takahashi ,  Toshimi Nishiyama ,  Kimihiko Shibuya

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Takayuki Negami ,  Yasuhito Takahashi ,  Toshimi Nishiyama ,  Kimihiko Shibuya

IPC分类号： G02F1/33

CPC分类号： G02F1/0072

摘要： The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane. Light from the light source is diffracted by the acoustooptic device in accordance with a signal from the driving circuit and the resultant diffracted light forms an image on the image plane. An acoustooptic medium of the acoustooptic device is formed of a Group III nitride crystal.

摘要翻译： 本发明提供即使在紫外线区域中的光也可以使用，没有激光损伤和光学损伤以及良好的声光性能的光学装置和使用该光学装置的光学成像装置。 根据本发明的声光装置包括高频信号输入部分（65），换能器部分（64）和声光介质（6）。 从高频信号输入部（65）输入的高频信号由换能器部（64）转换为机械振动，声光介质（6）的光学特性根据机械振动而变化。 声光介质由III族氮化物晶体形成。 根据本发明的光学成像装置包括光源，声光装置，驱动电路和图像平面。 来自光源的光根据来自驱动电路的信号被声光装置衍射，并且所得到的衍射光在图像平面上形成图像。 声光装置的声光介质由III族氮化物晶体形成。

公开(公告)号：US20070215035A1

公开(公告)日：2007-09-20

申请号：US10598095

申请日：2005-02-18

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Yasuhito Takahashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kwamura

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Yasuhito Takahashi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kwamura

IPC分类号： C30B25/00

CPC分类号： C30B29/406 ,  C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B19/064 ,  Y10T117/1016

摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.

摘要翻译： 本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。 在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。 通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。 此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。 因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

公开(公告)号：US06935124B2

公开(公告)日：2005-08-30

申请号：US10447878

申请日：2003-05-29

申请人： Yasuhito Takahashi ,  Katutosi Tusima ,  Takumi Kida ,  Yuko Ishii ,  Hiroshi Tatsui ,  Kazuyuki Hamada

发明人： Yasuhito Takahashi ,  Katutosi Tusima ,  Takumi Kida ,  Yuko Ishii ,  Hiroshi Tatsui ,  Kazuyuki Hamada

IPC分类号： F25C1/04 ,  F25C1/18 ,  F25C5/08 ,  F25C1/12

CPC分类号： F25C5/08 ,  F25C1/04 ,  F25C1/18 ,  F25C2305/022 ,  F25C2400/10 ,  F25C2400/14 ,  F25C2600/04

摘要： A clear ice making apparatus includes: a freezing space; a tray placed in the freezing space and having a lower temperature at a bottom part thereof than at an upper part thereof; and a water supply unit of supplying water to the tray from the top thereof, in which ice is made at an ice making rate of 5 μm/s or lower, a part of a liquid-phase section of water in the tray which part is in contact with atmosphere is frozen to complete the ice making, the liquid-phase section of water is not entirely supercooled before the ice making is completed, and the concentration of air in the liquid-phase section of water in the tray is equal to or lower than an excessive concentration of air.

摘要翻译： 一个明确的制冰装置包括：一个冷冻空间; 放置在冷冻空间中并且在其底部具有比在其上部具有较低温度的托盘; 以及供水单元，其从其顶部向冰盘供水，其中制冰量为5mum / s或更低的制冰速率，所述托盘中的水的液相部分的一部分为 在与大气接触的情况下被冷冻以完成制冰，在制冰完成之前，水的液相部分不完全过冷，并且托盘中的水的液相部分中的空气浓度等于或等于 低于过高的空气浓度。

公开(公告)号：US06869665B2

公开(公告)日：2005-03-22

申请号：US10644004

申请日：2003-08-20

申请人： Motoaki Tani ,  Nobuyuki Hayashi ,  Tomoyuki Abe ,  Yasuhito Takahashi ,  Yoshiyasu Saeki

发明人： Motoaki Tani ,  Nobuyuki Hayashi ,  Tomoyuki Abe ,  Yasuhito Takahashi ,  Yoshiyasu Saeki

IPC分类号： H05K1/11 ,  H01L23/12 ,  H01L23/14 ,  H05K1/03 ,  H05K1/05 ,  H05K3/46 ,  B32B3/00

CPC分类号： H05K1/056 ,  H05K3/4608 ,  H05K2201/0209 ,  H05K2201/0281 ,  H05K2201/0323 ,  H05K2201/068 ,  Y10S428/901 ,  Y10T428/24917

摘要： A wiring board includes a core layer and a pair of multilayer wiring portions. The core layer, having an upper surface and a lower surface, is formed from a resin composite which contains resin filler and encloses several pieces of carbon fiber cloth. One of the multilayer wiring portions is stacked on the upper surface of the core layer, while the other is stacked on the lower surface of the core layer. Each multilayer wiring portion is composed of a number of insulating layers and wiring patterns stacked alternately with the insulating layers. The wiring patterns of the upper and the lower wiring portions are connected to each other by conductors extending through the entire thickness of the core layer.

摘要翻译： 布线板包括芯层和一对多层布线部。 具有上表面和下表面的芯层由包含树脂填料的树脂复合材料形成，并包围几片碳纤维布。 多层布线部分中的一个堆叠在芯层的上表面上，而另一个层叠在芯层的下表面上。 每个多层布线部分由与绝缘层交替堆叠的多个绝缘层和布线图形组成。 上布线部分和下布线部分的布线图案通过延伸穿过芯层整个厚度的导体彼此连接。

公开(公告)号：US5499260A

公开(公告)日：1996-03-12

申请号：US282919

申请日：1994-07-29

申请人： Yasuhito Takahashi ,  Ayumu Tsujimura

发明人： Yasuhito Takahashi ,  Ayumu Tsujimura

IPC分类号： H01L33/10 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01S3/18

CPC分类号： H01S5/327 ,  H01S5/22 ,  H01S2304/04 ,  H01S5/2214 ,  H01S5/2227 ,  H01S5/2231

摘要： An n-ZnMgSSe lower cladding layer, an n-ZnSSe light guiding layer, an undopad CdZnSe active layer, a p-ZnSSe light guiding layer, a p-ZnMgSSe upper cladding layer, and a p-ZnSe cap layer are successively formed on an n-GaAs substrate. Then, grooves and a ridge are formed in the respective p-type layers by etching. A current blocking layer formed by laminating SiO.sub.2 layers and TiO.sub.2 layers in multiple layers is formed so as to bury the grooves. On the top surface of the ridge where the current blocking layer is not formed, an upper electrode is formed. On the bottom surface of the n-GaAs substrate, a lower electrode is formed, and thus the ridge type semiconductor laser is fabricated. This semiconductor laser is capable of emitting blue light with an oscillating wavelength of around 500 nm. The current blocking layer of the lamination of the SiO.sub.2 and TiO.sub.2 layers allows effective confinement of both light and carriers and a drastic decrease in the threshold current for a laser oscillation.

摘要翻译： 在n-ZnMgSSe下包层，n-ZnSSe导光层，未掺杂的CdZnSe有源层，p-ZnSSe导光层，p-ZnMgSSe上包层和p-ZnSe覆盖层上依次形成 n-GaAs衬底。 然后，通过蚀刻在各个p型层中形成沟槽和脊。 形成通过层叠多层SiO 2层和TiO 2层而形成的电流阻挡层，以便掩埋沟槽。 在没有形成电流阻挡层的脊的顶表面上形成上电极。 在n-GaAs衬底的底表面上形成下电极，由此制造脊型半导体激光器。 该半导体激光器能够发射具有约500nm的振荡波长的蓝光。 SiO 2和TiO 2层的层压的电流阻挡层允许光和载流子的有效约束，并且激光振荡的阈值电流急剧下降。

公开(公告)号：US08800142B2

公开(公告)日：2014-08-12

申请号：US12929680

申请日：2011-02-08

申请人： Hnin Nway San Nang ,  Kazuya Arai ,  Kei Fukui ,  Shinpei Ikegami ,  Yasuhito Takahashi ,  Hideaki Yoshimura ,  Hitoshi Suzuki

发明人： Hnin Nway San Nang ,  Kazuya Arai ,  Kei Fukui ,  Shinpei Ikegami ,  Yasuhito Takahashi ,  Hideaki Yoshimura ,  Hitoshi Suzuki

IPC分类号： H01K3/10 ,  H05K3/10

CPC分类号： H05K3/107 ,  B23K1/0016 ,  B23K3/0623 ,  B23K2101/42 ,  H01L23/49811 ,  H01L23/49822 ,  H01L2224/16225 ,  Y10T29/49165

摘要： A semiconductor chip mounting layer of a package substrate unit includes an insulation layer, a conductive seed metal layer formed on the top surface of the insulation layer, conductive pads formed on the top surface of the conductive seed metal layer, metal posts formed substantially in the central portion on the top surface of the conductive pads, and a solder resist layer that is formed to surround the conductive pads and the metal posts.

摘要翻译： 封装基板单元的半导体芯片安装层包括绝缘层，形成在绝缘层的顶表面上的导电种子金属层，形成在导电种子金属层的顶表面上的导电焊盘，基本上形成在金属柱 导电焊盘的顶表面上的中心部分，以及形成为围绕导电焊盘和金属柱的阻焊层。