公开(公告)号：US20140113454A1

公开(公告)日：2014-04-24

申请号：US14054902

申请日：2013-10-16

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Merritt Funk ,  Zhiying Chen

IPC: H01L21/3065 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/683

Abstract: A plasma processing apparatus includes a processing chamber having a plasma processing space therein and a substrate support in the processing chamber at a first end for supporting a substrate. A plasma source is coupled into the processing space and configured to form a plasma at a second end of the processing chamber opposite said first end. The apparatus further includes a magnetic grid having an intensity of a magnetic flux therein, a plurality of passageways penetrating from a first side to a second side, a thickness, a transparency, a passageway aspect ratio, and a position within the processing chamber between the second end and the substrate. The intensity, the thickness, the transparency, the passageway aspect ratio, and the position are configured to cause electrons having energies above an acceptable maximum level to divert from the direction. A method of obtaining low average electron energy flux onto the substrate is also provided.

Abstract translation: 等离子体处理装置包括其中具有等离子体处理空间的处理室和用于支撑基板的第一端处于处理室中的基板支撑件。 等离子体源耦合到处理空间中并且被配置为在与第一端相对的处理室的第二端处形成等离子体。 该装置还包括具有其中的磁通强度的磁栅格，从第一侧穿透到第二侧的多个通道，厚度，透明度，通道纵横比以及处理室内的位置 第二端和衬底。 强度，厚度，透明度，通道长宽比和位置被配置为使能量高于可接受的最大电平的电子从该方向转移。 还提供了一种在基板上获得低平均电子能量通量的方法。

公开(公告)号：US20130270997A1

公开(公告)日：2013-10-17

申请号：US13829959

申请日：2013-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H05H1/46 ,  H01F41/06 ,  C23F1/00

CPC classification number: H05H1/46 ,  C23F1/00 ,  H01F41/06 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/3065 ,  Y10T29/49016

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

公开(公告)号：US20130264938A1

公开(公告)日：2013-10-10

申请号：US13830090

申请日：2013-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有至少一个时隙的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型和第二凹陷构型，其中第一凹槽构型的至少一个第一凹槽的尺寸和/或形状与第二凹部构型的至少一个第二凹部不同。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

公开(公告)号：US10796916B2

公开(公告)日：2020-10-06

申请号：US15941901

申请日：2018-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

IPC: H01J37/32 ,  H01L21/268

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US09941126B2

公开(公告)日：2018-04-10

申请号：US14309090

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

IPC: H01L21/268 ,  H01J37/32

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US09799494B2

公开(公告)日：2017-10-24

申请号：US15088930

申请日：2016-04-01

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk

IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/515 ,  C23C16/517

CPC classification number: H01J37/32596 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32467 ,  H01L21/3065

Abstract: A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected into a processing chamber. The gas includes a high electron affinity gas species. A surface is provided in the plasma chamber onto which the gas species has a tendency to chemisorb. The gas species is exposed to the surface, chemisorbed onto it, and the surface is exposed to energy that causes negative ions of the chemisorbed gas species, that interact in the plasma to release secondary electrons. A neutralizer grid may be provided to separate from the chamber a second chamber in which forms a low energy secondary plasma for processing the substrate that is dense in electrons and contains high energy neutrals of the gas species and high energy positive ions of processing gas. Pulsed energy may be used to excite plasma or bias the substrate. A hollow cathode source is also provided.

公开(公告)号：US20160293386A1

公开(公告)日：2016-10-06

申请号：US15088930

申请日：2016-04-01

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32596 ,  C23C16/515 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32467 ,  H01L21/3065

Abstract: A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected into a processing chamber. The gas includes a high electron affinity gas species. A surface is provided in the plasma chamber onto which the gas species has a tendency to chemisorb. The gas species is exposed to the surface, chemisorbed onto it, and the surface is exposed to energy that causes negative ions of the chemisorbed gas species, that interact in the plasma to release secondary electrons. A neutralizer grid may be provided to separate from the chamber a second chamber in which forms a low energy secondary plasma for processing the substrate that is dense in electrons and contains high energy neutrals of the gas species and high energy positive ions of processing gas. Pulsed energy may be used to excite plasma or bias the substrate. A hollow cathode source is also provided.

Abstract translation: 提供一种处理方法和系统，用于在存在电负气体的情况下用等离子体处理衬底。 处理气体被注入到处理室中。 气体包括高电子亲和气体种类。 在等离子体室中设置表面，气体种类具有化学吸附的倾向。 气体物质暴露于表面，化学吸附到其上，并且表面暴露于引起化学吸附气体物质的负离子的能量，其在等离子体中相互作用以释放二次电子。 可以提供中和器栅格以与室隔开第二室，其中形成用于处理电子致密的基板的低能二次等离子体，并且包含处理气体的气体种类和高能正离子的高能中性物质。 脉冲能量可用于激发等离子体或偏置衬底。 还提供了一种空心阴极源。

公开(公告)号：US09301383B2

公开(公告)日：2016-03-29

申请号：US13829959

申请日：2013-03-14

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H05H1/46 ,  H01F41/06 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H05H1/46 ,  C23F1/00 ,  H01F41/06 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/3065 ,  Y10T29/49016

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

公开(公告)号：US09111873B2

公开(公告)日：2015-08-18

申请号：US14054902

申请日：2013-10-16

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Merritt Funk ,  Zhiying Chen

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/683

Abstract: A plasma processing apparatus includes a processing chamber having a plasma processing space therein and a substrate support in the processing chamber at a first end for supporting a substrate. A plasma source is coupled into the processing space and configured to form a plasma at a second end of the processing chamber opposite said first end. The apparatus further includes a magnetic grid having an intensity of a magnetic flux therein, a plurality of passageways penetrating from a first side to a second side, a thickness, a transparency, a passageway aspect ratio, and a position within the processing chamber between the second end and the substrate. The intensity, the thickness, the transparency, the passageway aspect ratio, and the position are configured to cause electrons having energies above an acceptable maximum level to divert from the direction. A method of obtaining low average electron energy flux onto the substrate is also provided.

Abstract translation: 等离子体处理装置包括其中具有等离子体处理空间的处理室和用于支撑基板的第一端处于处理室中的基板支撑件。 等离子体源耦合到处理空间中并且被配置为在与第一端相对的处理室的第二端处形成等离子体。 该装置还包括具有其中的磁通强度的磁栅格，从第一侧穿透到第二侧的多个通道，厚度，透明度，通道纵横比以及处理室内的位置 第二端和衬底。 强度，厚度，透明度，通道长宽比和位置被配置为使能量高于可接受的最大电平的电子从该方向转移。 还提供了一种在基板上获得低平均电子能量通量的方法。

公开(公告)号：US20150170925A1

公开(公告)日：2015-06-18

申请号：US14571806

申请日：2014-12-16

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Peter L.G. Ventzek ,  Barton G. Lane

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01J37/32045 ,  H01J37/32174 ,  H01J37/32642 ,  H01J37/32935

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may include a power electrode that may be opposite a bias electrode and a focus ring electrode that surrounds the substrate. In one embodiment, the power electrode may be coupled to a direct current (DC) source. Power applied to the bias electrode may be used to draw ions to the substrate. The plasma density may be made more uniform by applying a focus ring voltage to the focus ring that is disposed around the substrate and/or the bias electrode.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及等离子体处理系统，其可以包括可以与偏置电极相对的功率电极和围绕衬底的聚焦环电极。 在一个实施例中，功率电极可以耦合到直流（DC）源。 施加到偏置电极的功率可以用于将离子吸引到衬底。 通过向设置在基板和/或偏置电极周围的聚焦环施加聚焦环电压，可以使等离子体密度更均匀。