公开(公告)号：US20240021410A1

公开(公告)日：2024-01-18

申请号：US17865225

申请日：2022-07-14

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  John Carroll ,  Charles Schlechte ,  Peter Lowell George Ventzek

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32541 ,  H01J37/3299 ,  H01J2237/24564

Abstract: A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.

公开(公告)号：US20230399739A1

公开(公告)日：2023-12-14

申请号：US18454632

申请日：2023-08-23

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter Lowell George Ventzek ,  Toshihiko Iwao

IPC: C23C16/26 ,  C23C16/46 ,  C23C16/52 ,  C23C16/505

CPC classification number: C23C16/26 ,  C23C16/463 ,  C23C16/52 ,  C23C16/505

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate holder disposed in the chamber, and a radio frequency (RF) electrode disposed within the chamber, an RF power source configured to supply continuous wave RF power having frequency in the very high frequency range to the RF electrode, and a direct current (DC) power source configured to supply continuous wave DC power to the chamber through an RF choke. The DC power is supplied concurrently with the RF power. The RF power source is electrically coupled to the RF electrode through an impedance matching circuit and is separate from the DC power source. The RF electrode may be an upper electrode or a lower electrode, such as the substrate holder. The DC power may be supplied to an upper or lower electrode, or through a wall of the chamber.

公开(公告)号：US11830709B2

公开(公告)日：2023-11-28

申请号：US17498063

申请日：2021-10-11

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter Ventzek

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/3299 ,  H01J37/32146 ,  H01J37/32183 ,  H01L22/14 ,  H01J2237/332 ,  H01J2237/334

Abstract: An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.

公开(公告)号：US20220093395A1

公开(公告)日：2022-03-24

申请号：US17026168

申请日：2020-09-19

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter Ventzek ,  Toshihiko Iwao

IPC: H01L21/02 ,  C23C16/34

Abstract: A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: treating an unreactive surface of a substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux, and nitridating the reactive surface using a nitrogen-based gas to convert the reactive surface to a nitride layer including a subsequent unreactive surface.

公开(公告)号：US10388528B2

公开(公告)日：2019-08-20

申请号：US15164312

申请日：2016-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Lee Chen ,  Zhiying Chen ,  Jianping Zhao ,  Merritt Funk

IPC: H01J37/32 ,  H01L21/263 ,  H01L21/67

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

公开(公告)号：US09947516B2

公开(公告)日：2018-04-17

申请号：US14727660

申请日：2015-06-01

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Toshihisa Nozawa

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32238 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/3222 ,  H01L21/67069

Abstract: Techniques disclosed herein include an apparatus for treating substrates with plasma generated within a plasma processing chamber. In one embodiment, dielectric plates, of a plasma system can include structural features configured to assist in generating a uniform plasma. Such structural features define a surface shape, on a surface that faces the plasma. Such structural features can include a set of concentric rings having an approximately non-linear cross section, and protrude into the surface of the dielectric plate. Such structural features may include feature depth, width, and periodic patterns that may vary depth and width along the concentric rings.

公开(公告)号：US09947515B2

公开(公告)日：2018-04-17

申请号：US14204840

申请日：2014-03-11

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen ,  Toshihiko Iwao ,  Toshihisa Nozawa ,  Zhiying Chen ,  Peter Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32229 ,  H01J37/32211 ,  H01J37/32238 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

公开(公告)号：US09793095B2

公开(公告)日：2017-10-17

申请号：US14204887

申请日：2014-03-11

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen ,  Toshihiko Iwao ,  Toshihisa Nozawa ,  Zhiying Chen ,  Peter Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32229 ,  H01J37/32211 ,  H01J37/32238 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

公开(公告)号：US20160300738A1

公开(公告)日：2016-10-13

申请号：US15093031

申请日：2016-04-07

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Barton G. Lane ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32192 ,  H01J37/32568 ,  H01J37/32577

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

Abstract translation: 本发明提供了一种SWP（表面波等离子体）处理系统，其在低微波功率和高气体压力下工作时不会产生过度条件，从而实现更大的工艺窗口。 DC环形子系统可用于调整边缘到中心等离子体密度比，以实现SWP处理系统的均匀性控制。

公开(公告)号：US20160293389A1

公开(公告)日：2016-10-06

申请号：US15088834

申请日：2016-04-01

Applicant: Tokyo Electron Limited ,  University of Houston System

Inventor： Lee Chen ,  Demetre J. Economou ,  Jianping Zhao ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3222 ,  H01J37/32293

Abstract: A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.

Abstract translation: 提供了一种用于获得在处理室中的基板上的低平均电子能量通量的方法和装置。 处理室包括用于化学处理的基板支撑件。 能量源诱导的等离子体和离子推进装置将能量等离子体电子引导到衬底支撑。 垂直于离子行进方向施加偶极环磁场，以有效地防止高于可接受的最大能级的电子到达衬底保持器。 偶极磁场的旋转减小电子不均匀性。