公开(公告)号：US20170241014A1

公开(公告)日：2017-08-24

申请号：US15435970

申请日：2017-02-17

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Gerrit J. Leusink ,  Cory Wajda ,  Tadahiro Ishizaka ,  Takahiro Hakamata

IPC: C23C16/16 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/16 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45523 ,  C23C16/45557

Abstract: A method for material deposition is described in several embodiments. According to one embodiment, the method includes providing a substrate defining features to receive a deposition of material, initiating a flow of a Ru carbonyl precursor to the substrate, the Ru carbonyl precursor decomposing within the defined features such that a Ru metal film is deposited on surfaces of the defined features and CO gas is released, and stopping the flow of the Ru carbonyl precursor to the substrate. The method further includes flowing additional CO gas to the substrate after stopping the flow of the Ru carbonyl precursor to the substrate, and repeatedly cycling between process steps of flowing the Ru carbonyl precursor to the substrate and flowing the additional CO gas to the substrate. In one embodiment, the Ru carbonyl precursor contains Ru3(CO)12.

公开(公告)号：US09711449B2

公开(公告)日：2017-07-18

申请号：US15172648

申请日：2016-06-03

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Gerrit J. Leusink ,  Cory Wajda ,  Tadahiro Ishizaka ,  Takahiro Hakamata

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L23/5226 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/53242

Abstract: A method is provided for at least partially filling a feature in a substrate. The method includes providing a substrate containing a feature, depositing a ruthenium (Ru) metal layer to at least partially fill the feature, and heat-treating the substrate to reflow the Ru metal layer in the feature.

公开(公告)号：US20140030886A1

公开(公告)日：2014-01-30

申请号：US14042198

申请日：2013-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takara FUKUSHIMA ,  Tadahiro Ishizaka ,  Atsushi Gomi ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  C23C14/046 ,  H01L21/2855 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A copper (Cu) wiring forming method includes forming a barrier film on the entire surface of a wafer which has a trench, forming a ruthenium (Ru) film on the barrier film, and filling the trench by forming a pure copper film on the ruthenium film by a physical vapor deposition (PVD). The method further includes forming a copper alloy film on the pure copper film by the PVD, forming a copper wiring by polishing the entire surface by a chemical mechanical polishing, forming a cap layer made of a dielectric material on the copper wiring, and segregating an alloy component included in the copper alloy film in a region including a portion corresponding an interface between the copper wiring and the cap layer.

Abstract translation: 铜（Cu）布线形成方法包括在具有沟槽的晶片的整个表面上形成阻挡膜，在阻挡膜上形成钌（Ru）膜，并通过在钌上形成纯铜膜来填充沟槽 膜通过物理气相沉积（PVD）。 该方法还包括通过PVD在纯铜膜上形成铜合金膜，通过化学机械抛光对整个表面进行抛光而形成铜布线，在铜布上形成由电介质材料制成的覆盖层，并将 包括在铜合金膜中的合金成分在包括对应于铜布线和盖层之间的界面的部分的区域中。

公开(公告)号：US12227841B2

公开(公告)日：2025-02-18

申请号：US18125236

申请日：2023-03-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka

IPC: H01L21/67 ,  C23C16/02 ,  C23C16/06 ,  C23C16/16 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

Abstract: A ruthenium film forming method includes: causing chlorine to be adsorbed to an upper portion of a recess at a higher density than to a lower portion of the recess by supplying a chlorine-containing gas to a substrate including an insulating film and having the recess; and forming a ruthenium film in the recess by supplying a Ru-containing precursor to the recess to which the chlorine is adsorbed.

公开(公告)号：US20230411142A1

公开(公告)日：2023-12-21

申请号：US18198355

申请日：2023-05-17

Applicant: Tokyo Electron Limited

Inventor： Ryota Yonezawa ,  Kai-Hung Yu ,  Tadahiro Ishizaka ,  Atsushi Gomi ,  Hidenao Suzuki

IPC: H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/02068 ,  H01L21/32051

Abstract: Improved process flows and methods are provided for processing a semiconductor substrate have exposed dielectric and metal-containing surfaces. More specifically, improved process flows and methods are provided for pre-cleaning the metal-containing surfaces prior to depositing a metal material onto the metal-containing surfaces. Hot vapor-phase etching is used to remove a native oxide film from the metal-containing surfaces. Prior to hot vapor-phase etching, the semiconductor substrate is exposed to a first silicon-containing gas to deposit an inhibitor film onto the exposed dielectric and metal-containing surfaces. The inhibitor film protects the dielectric surfaces while the native oxide film is being removed via the hot vapor-phase etching. In some embodiments, the semiconductor substrate is exposed to a second silicon-containing gas, after hot vapor-phase etching, to remove residues of the hot vapor-phase etching process from the pre-cleaned metal-containing surfaces.

公开(公告)号：US10199451B2

公开(公告)日：2019-02-05

申请号：US15386741

申请日：2016-12-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Masaki Koizumi ,  Masaki Sano ,  Seokhyoung Hong

IPC: H01L49/02

Abstract: A lower electrode is made of a TiN-based material and provided at a base of a dielectric film in a DRAM capacitor. The lower electrode includes first TiON films provided at opposite outer sides, the first TiON films having a relatively low oxygen concentration, and a second TiON film provided between the first TiON films, the second TiON film having a relatively high oxygen concentration.

公开(公告)号：US10096548B2

公开(公告)日：2018-10-09

申请号：US15072165

申请日：2016-03-16

Applicant: Tokyo Electron Limited

Inventor： Kenji Matsumoto ,  Tadahiro Ishizaka ,  Peng Chang ,  Osamu Yokoyama ,  Takashi Sakuma ,  Hiroyuki Nagai

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285

Abstract: In a Cu wiring manufacturing method, a MnOx film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOx film to reduce the surface of the MnOx film. A Ru film is formed by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.

公开(公告)号：US09932669B2

公开(公告)日：2018-04-03

申请号：US15157599

申请日：2016-05-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka

IPC: H01L21/28 ,  C23C16/16 ,  H01L29/423 ,  H01L27/11524 ,  H01L27/11556

CPC classification number: C23C16/16 ,  C23C16/04 ,  C23C16/45523 ,  H01L21/28273 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/42332

Abstract: A metal nanodot formation method includes: loading a target substrate inside a processing container of a processing apparatus; depositing a plurality of metal nanodots on a surface of the target substrate by a sequence of: supplying a CO gas from a CO gas container which stores the CO gas into a raw material container which stores a metal carbonyl compound; generating gas of the metal carbonyl compound; introducing the generated gas of the metal carbonyl compound as a mixture gas containing the CO gas into the processing container; and decomposing the metal carbonyl compound on the target substrate, and directly introducing the CO gas from the CO gas container into the processing container, in a state where the introduction of the mixture gas into the processing container is stopped, such that the CO gas is brought into contact with the metal nanodots on the surface of the target substrate.

公开(公告)号：US09540733B2

公开(公告)日：2017-01-10

申请号：US14697824

申请日：2015-04-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  C23C16/06 ,  C23C16/46 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44 ,  H01L23/532 ,  C23C16/16

CPC classification number: C23C16/46 ,  C23C16/06 ,  C23C16/16 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/52 ,  H01L21/02107 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A film forming method in which in a state in which a target substrate is loaded on a loading table body of a loading table installed in a processing container and an interior of the processing container is evacuated, a film forming material gas is supplied into the processing container while heating the target substrate with a heater installed in the loading table body, to be thermally decomposed or reacted on a surface of the target substrate to form a predetermined film on the target substrate, includes introducing a heat transfer gas containing an H2 gas or an He gas into the processing container to transfer heat of the loading table body to a radially outer side of the loading table body, before the film forming material gas is supplied.

Abstract translation: 一种成膜方法，其中在将目标基底装载在安装在处理容器中的装载台的装载台体和处理容器的内部的状态下，将成膜材料气体供给到处理 容器，同时用安装在装载台主体中的加热器加热目标基板，在目标基板的表面上热分解或反应以在目标基板上形成预定的膜，包括引入含有H 2气体的传热气体或 在供给成膜材料气体之前，将He气体输送到加工容器中，以将装载台体的热量传递到装载台体的径向外侧。

公开(公告)号：US20160240433A1

公开(公告)日：2016-08-18

申请号：US15043675

申请日：2016-02-15

Applicant: Tokyo Electron Limited

Inventor： Tadahiro Ishizaka

IPC: H01L21/768 ,  C23C16/455 ,  H01L21/285

CPC classification number: H01L21/28556 ,  C23C16/16 ,  C23C16/4481 ,  C23C16/45523 ,  C23C16/45561 ,  H01L21/76843 ,  H01L23/53238

Abstract: A ruthenium film forming method includes a deposition process of introducing a mixed gas of a ruthenium carbonyl gas and a CO gas into a processing vessel 1 by supplying the CO gas as a carrier gas from a CO gas container 43 configured to contain the CO gas into a film forming source container 41 configured to contain ruthenium carbonyl in a solid state as a film forming source material, and forming ruthenium film by decomposing the ruthenium carbonyl on a wafer W; and a CO gas introduction process of bringing the CO gas into contact with a surface of the wafer W by introducing the CO gas directly into the processing vessel 1 from the CO gas container 43 after stopping the introducing of the mixed gas into the processing vessel 1. The deposition process and the CO gas introduction process are repeated multiple times.

Abstract translation: 钌膜形成方法包括通过从构成为含有CO气体的CO气体容器43供给作为载气的CO气体而将羰基羰基钌和CO气体的混合气体导入处理容器1的沉积工序 成膜源容器41，其被配置为含有固态的羰基钌作为成膜源材料，并通过在晶片W上分解羰基钌来形成钌膜; 以及通过在停止将混合气体引入到处理容器1中之后，将CO气体从CO气体容器43直接引入处理容器1中而使CO气体与晶片W的表面接触的CO气体导入工序 沉积过程和CO气体引入过程重复多次。