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公开(公告)号：US12170217B2
公开(公告)日：2024-12-17
申请号：US17652545
申请日：2022-02-25
Applicant: Tokyo Electron Limited
Inventor： Hiroaki Chihaya , Yasuhiko Kojima , Einstein Noel Abarra , Tetsuya Miyashita
IPC: H01L21/683
Abstract: A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck.
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公开(公告)号：US12163215B2
公开(公告)日：2024-12-10
申请号：US17631188
申请日：2020-07-02
Applicant: TOKYO ELECTRON LIMITED
Inventor： Koji Maeda , Atsushi Shimada , Katsushi Oikawa , Tetsuya Miyashita
Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.
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Patent Agency Ranking
公开(公告)号：US11410837B2
公开(公告)日：2022-08-09
申请号：US16346705
申请日：2017-10-23
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroyuki Toshima , Tatsuo Hatano , Tetsuya Miyashita , Shinji Furukawa , Junichi Takei
Abstract: A film-forming device according to one embodiment includes a chamber body, a support, a moving device, a shielding member, a first holder and a second holder, in the film-forming device, a substrate supported by the support is linearly moved. The shielding member is disposed above an area where the substrate is moved, and includes a slit extending in a direction perpendicular to a movement direction of the substrate. The first holder and the second holder hold a first target and a second target, respectively, above the shielding member. The first target and the second target are arranged symmetrically with respect to a vertical plane including a linear path on which the center of the substrate is moved.
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公开(公告)号：US11193200B2
公开(公告)日：2021-12-07
申请号：US16202238
申请日：2018-11-28
Applicant: Tokyo Electron Limited
Inventor： Koji Maeda , Hiroyuki Yokohara , Hiroshi Sone , Tetsuya Miyashita
Abstract: Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.
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公开(公告)号：US10392688B2
公开(公告)日：2019-08-27
申请号：US15832591
申请日：2017-12-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Junichi Takei , Naoyuki Suzuki , Tetsuya Miyashita
Abstract: A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.
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公开(公告)号：US09303788B2
公开(公告)日：2016-04-05
申请号：US14070121
申请日：2013-11-01
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masamichi Hara , Tetsuya Miyashita
CPC classification number: F16K51/02 , H01L21/67201 , Y10T137/86083
Abstract: Provided is a load lock device which includes: a container with an opening formed therein and configured to be selectively maintained at an atmospheric environment and a vacuum atmosphere; a holding unit arranged within the container and configured to hold objects to be processed; an elevation mechanism configured to vertically move the holding unit; and a pressure regulating mechanism configured to vacuum-evacuate the container through the opening of the container. The elevation mechanism includes at least two vertically-extended elevation shaft members connected to the holding unit; and a drive unit configured to vertically move the elevation shaft members. The elevation shaft members are arranged opposite each other with the opening interposed therebetween.
Abstract translation: 本发明提供一种装载锁定装置，其特征在于，包括：容器，其开口部形成于所述容器中，并且能够选择性地保持在大气环境和真空气氛中; 保持单元，其布置在所述容器内并且构造成保持要处理的物体; 升降机构，其构造成使所述保持单元垂直移动; 以及压力调节机构，其构造成通过容器的开口对容器进行真空抽真空。 升降机构包括连接到保持单元的至少两个垂直延伸的仰角轴构件; 以及构造成垂直移动仰角轴构件的驱动单元。 升降轴构件彼此相对地布置，并且其间插入开口。
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公开(公告)号：US20150187549A1
公开(公告)日：2015-07-02
申请号：US14404143
申请日：2013-03-28
Applicant: TOKYO ELECTRON LIMITED
Inventor： Toru Kitada , Kanto Nakamura , Atsushi Gomi , Tetsuya Miyashita
IPC: H01J37/34
CPC classification number: H01J37/3455 , C23C14/35 , H01J37/3405 , H01J37/3417 , H01J37/3447 , H01J37/3452 , H01J2237/332
Abstract: To provide technology that can increase the productivity of an apparatus when magnetron sputtering is carried out using a target formed from magnetic material. The present disclosure is an apparatus provided with: a cylindrical body that is a target formed from magnetic material, disposed above a substrate; a rotating mechanism that rotates this cylindrical body around the axis of the cylindrical body; a magnet array provided inside a hollow part of the cylindrical body; and a power supply that applies voltage to the cylindrical body. Furthermore, the magnet array has a cross sectional profile, orthogonal to the axis of the cylindrical body. Thus, even if a target with a comparatively large thickness is used, reductions in the intensity of the magnetic field that leaks from the target can be suppressed, and local progress in erosion can be suppressed.
Abstract translation: 提供使用由磁性材料形成的靶进行磁控溅射时能够提高装置的生产率的技术。 本公开是一种设备，其具有：设置在基板上方的由磁性材料形成的靶的圆筒体; 旋转机构，其使该圆筒体围绕圆柱体的轴线旋转; 设置在所述圆筒体的中空部内的磁体阵列; 以及向圆柱体施加电压的电源。 此外，磁体阵列具有与圆柱体的轴线正交的横截面轮廓。 因此，即使使用厚度较大的靶，也能够抑制从目标泄漏的磁场强度的降低，能够抑制局部的侵蚀。
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