公开(公告)号：US6081607A

公开(公告)日：2000-06-27

申请号：US772720

申请日：1996-12-23

Applicant: Toru Mori ,  Yuji Kuno ,  Osamu Yamakita ,  Mitsuyoshi Tsukada

Inventor： Toru Mori ,  Yuji Kuno ,  Osamu Yamakita ,  Mitsuyoshi Tsukada

IPC: A61B3/14 ,  A01K11/00 ,  A01K29/00 ,  A61B3/12 ,  A61B5/117 ,  G06K9/00 ,  G06T7/00

CPC classification number: A01K11/006 ,  A01K29/00 ,  A61B3/1216 ,  G06K9/00597

Abstract: An animal body identifying device of the present invention includes a camera for photographing an eye of an animal, a body data capturer for capturing body data for the photographed animal from an image photographed by the camera, a body data registry for pre-storing a plurality of body data and a body data collator for correlating body data stored in the body data registry with body data captured by the body data capturer and identifying whether or not the photographed animal is a registered animal. An animal body identifying system of the present invention includes a body data capturing device for photographing an eye of an animal and capturing body data for the animal and a body data comparing device for collating body data obtained from the body data capturing device with pre-registered body data and determining whether or not the photographed animal is a registered animal.

Abstract translation: 本发明的动物身体识别装置包括摄像机，用于拍摄动物的眼睛;身体数据捕获器，用于从由照相机拍摄的图像拍摄拍摄的动物的身体数据;身体数据登记器，用于预先存储多个 身体数据整理器，用于将存储在身体数据注册表中的身体数据与身体数据捕获器捕获的身体数据相关联，并识别被拍摄的动物是否是注册动物。 本发明的动物体识别系统包括拍摄动物的眼睛并捕获动物的身体数据的身体数据捕获装置和用于将从身体数据捕获装置获得的身体数据与预先登记的身体数据比较装置 确定拍摄的动物是否为注册动物。

公开(公告)号：US5275988A

公开(公告)日：1994-01-04

申请号：US865445

申请日：1992-04-09

Applicant: Toru Mori ,  Mitsuru Furuya ,  Atsushi Ochi

Inventor： Toru Mori ,  Mitsuru Furuya ,  Atsushi Ochi

IPC: C04B35/499 ,  C04B35/46

CPC classification number: C04B35/499

Abstract: A ceramic composition is herein disclosed, which is a lead-type perovskite compound capable of being subjected to low temperature-sintering among ceramic compositions for use in making capacitors, which has a high dielectric constant at room temperature of not less than 10000, a low temperature-dependency of the dielectric constant and a low decrease in capacitance upon application of a DC bias and which comprises, as a main constituent, a ternary system comprising lead magnesium niobate: [Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 ], lead nickel niobate: [Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3 ] and lead titanate: [PbTiO.sub.3 ] in which part of the Pb.sup.2+ ions present in the ternary system are substituted with a desired amount of Sr.sup.2+ ions, Ba.sup.2+ ions or Ca.sup.2+ ions.

Abstract translation: 本文公开了一种陶瓷组合物，其是能够在用于制造电容器的陶瓷组合物中进行低温烧结的铅型钙钛矿化合物，其在室温下的介电常数不低于10000，低 介电常数的温度依赖性以及在施加直流偏压时电容的降低较小，并且其包含作为主要成分的包含铌酸铅镁（Pb（Mg1 / 3Nb2 / 3）O3），铅镍 铌酸盐：（Pb（Ni1 / 3Nb2 / 3）O3）和钛酸铅：（PbTiO3），其中存在于三元体系中的部分Pb 2+离子被所需量的Sr 2+离子，Ba 2+离子或Ca 2+离子所取代。

公开(公告)号：US5011984A

公开(公告)日：1991-04-30

申请号：US508530

申请日：1990-04-12

Applicant: Ryuzo Ueno ,  Yoshiyasu Masada ,  Toru Mori

Inventor： Ryuzo Ueno ,  Yoshiyasu Masada ,  Toru Mori

IPC: C07C65/11 ,  C07C51/15 ,  C07C65/01

CPC classification number: C07C51/15

Abstract: The present invention provides a production of 2-hydroxynaphthalene-6-carboxylic acid improved in the yield and the selective ratio, in which .beta.-naphthol and water formed in the reaction system are eliminated therefrom through the reaction.

Abstract translation: 本发明提供了通过反应从其中除去反应体系中形成的β-萘酚和水的产率和选择比提高的2-羟基萘-6-羧酸的制备。

公开(公告)号：US07981532B2

公开(公告)日：2011-07-19

申请号：US12088389

申请日：2006-09-28

Applicant: Toru Mori ,  Yoshimi Kubo ,  Akira Okamoto ,  Yasuyuki Nakamura

Inventor： Toru Mori ,  Yoshimi Kubo ,  Akira Okamoto ,  Yasuyuki Nakamura

IPC: C01F17/00 ,  B32B9/00

CPC classification number: C09K5/08 ,  C01G45/1264 ,  C01P2002/34 ,  C03C17/23 ,  C03C17/3417 ,  C03C17/3435 ,  C03C2217/23

Abstract: In an Mn-containing perovskite oxide which is a conventional phase-change substance (A1−xBx)MnO3, when the mixing amount x is increased, the transition temperature (Tc) is shifted to higher temperature side, but the slope of a change in the emittance become gentle and Δε (ε at higher temperature−ε at lower temperature) also become small. In the present invention, the compositional formula of the phase-change substance is the Mn-containing perovskite oxide represented by (A1−xBx)Mn1+yO3 with 0

Abstract translation: 在常规相变物质（A1-xBx）MnO3的含Mn钙钛矿氧化物中，当混合量x增加时，转变温度（Tc）转变到较高温度侧，但是斜率 放射性变得温和，并且 （在较高温度下，在较低温度下）也变小。 在本发明中，相变物质的组成式是由（A1-xBx）Mn1 + yO3表示的含有Mn的钙钛矿氧化物，其中Mn比由化学计量组成变化，从而使转变 温度（Tc）升高到更高的温度，其发射特性与具有从化学计量组成不变的组成的相变物质相当。

公开(公告)号：US20110165770A1

公开(公告)日：2011-07-07

申请号：US13064204

申请日：2011-03-10

Applicant: Toru Mori

Inventor： Toru Mori

IPC: H01L21/28

CPC classification number: H01L29/792 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66833

Abstract: A non-volatile memory device includes a memory cell region which is formed on a semiconductor substrate to store predetermined information, and a peripheral circuit region which is formed on the semiconductor substrate. The memory cell region includes a gate electrode; and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of the gate electrode. The peripheral circuit region includes no charge storage layer therein.

Abstract translation: 非易失性存储器件包括形成在半导体衬底上以存储预定信息的存储单元区域和形成在半导体衬底上的外围电路区域。 存储单元区域包括栅电极; 和电荷存储层，所述电荷存储层形成为具有延伸到所述栅电极的底端的两侧的边缘的凹口或楔形。 外围电路区域中不包含电荷存储层。

公开(公告)号：US07923765B2

公开(公告)日：2011-04-12

申请号：US12314956

申请日：2008-12-19

Applicant: Toru Mori

Inventor： Toru Mori

IPC: H01L29/788 ,  H01L29/423

CPC classification number: H01L29/792 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66833

Abstract: A non-volatile memory device includes a memory cell region which is formed on a semiconductor substrate to store predetermined information, and a peripheral circuit region which is formed on the semiconductor substrate. The memory cell region includes a gate electrode; and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of the gate electrode. The peripheral circuit region includes no charge storage layer therein.

公开(公告)号：US20090159960A1

公开(公告)日：2009-06-25

申请号：US12314956

申请日：2008-12-19

Applicant: Toru Mori

Inventor： Toru Mori

IPC: H01L29/792

CPC classification number: H01L29/792 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66833

Abstract: A non-volatile memory device includes a memory cell region which is formed on a semiconductor substrate to store predetermined information, and a peripheral circuit region which is formed on the semiconductor substrate. The memory cell region includes a gate electrode; and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of the gate electrode. The peripheral circuit region includes no charge storage layer therein.

Abstract translation: 非易失性存储器件包括形成在半导体衬底上以存储预定信息的存储单元区域和形成在半导体衬底上的外围电路区域。 存储单元区域包括栅电极; 和电荷存储层，所述电荷存储层形成为具有延伸到所述栅电极的底端的两侧的边缘的凹口或楔形。 外围电路区域中不包含电荷存储层。

公开(公告)号：US07323537B2

公开(公告)日：2008-01-29

申请号：US11291975

申请日：2005-12-02

Applicant: Hitoshi Nimura ,  Motohiro Munakata ,  Toru Mori ,  Toshio Akai

Inventor： Hitoshi Nimura ,  Motohiro Munakata ,  Toru Mori ,  Toshio Akai

IPC: C08G63/02

CPC classification number: C08G63/85 ,  C08G63/183 ,  C08G63/83

Abstract: To provide a catalyst for production of a polyester, a process for producing a polyester using the catalyst and a titanium-containing polyethylene terephthalate having excellent characteristics.A catalyst for production of a polyester, characterized by comprising at least (1) a Group 4A compound (hereinafter referred to as compound (1)), (2) a compound of at least one element selected from the group consisting of magnesium, calcium and zinc (hereinafter referred to as compound (2)) and an oxygen-containing organic solvent. A process for producing a polyester using this catalyst. A titanium-containing polyethylene terephthalate, having characteristics represented by the following (A), (B) and (C): (A) titanium K absorption edge: the peak intensity ratio R defined by R=A/B exceeds 0.2, where A is the intensity of a peak having the maximum intensity among K absorption pre-edge peaks, and B is the maximum peak intensity of K absorption post-edge peaks in a XANES spectrum obtained by normalizing a XAFS spectrum; (B) the amount of carboxyl end groups is less than 35 eq/ton; and (C) the intrinsic viscosity is at least 0.5 dl/g.

Abstract translation: 提供生产聚酯的催化剂，使用该催化剂生产聚酯的方法和具有优异特性的含钛聚对苯二甲酸乙二醇酯。 一种生产聚酯的催化剂，其特征在于至少包含（1）4A族化合物（以下称为化合物（1）），（2）至少一种选自镁，钙 和锌（以下称为化合物（2））和含氧有机溶剂。 使用该催化剂制造聚酯的方法。 具有以下（A），（B）和（C）表示的特征的含钛聚对苯二甲酸乙二醇酯：（A）钛K吸收边：由R = A / B定义的峰强度比R超过0.2，其中A 是K吸收前缘峰中具有最大强度的峰的强度，B是通过归一化XAFS光谱获得的XANES光谱中的K吸收后边缘峰的最大峰强度; （B）羧基端基的量小于35当量/吨; 和（C）特性粘度为至少0.5dl / g。

公开(公告)号：US06924183B2

公开(公告)日：2005-08-02

申请号：US10748259

申请日：2003-12-31

Applicant: Toru Mori

Inventor： Toru Mori

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L23/52 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/66772 ,  H01L29/41733 ,  H01L29/78639 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A manufacturing method for an SOI semiconductor device includes creating transistors and an element isolation region on a semiconductor layer in an SOI substrate. The method also includes covering the transistors and the element isolation region with a first insulation film. The method also includes creating a first opening section which penetrates the first insulation film, element isolation region and a buried oxide film to expose the support substrate. The method also includes creating a first source interconnect, first drain interconnect and first gate interconnect which are electrically connected to the transistors, on the second insulation film. The method also includes forming dummy interconnects which are connected with these interconnects, and are electrically connected with the support substrate via the first opening section, on the second insulation film. The method also includes disconnecting the dummy interconnects to electrically insulate the first source interconnect, first drain interconnect and first gate interconnect from the support substrate.

公开(公告)号：US06515324B2

公开(公告)日：2003-02-04

申请号：US09942817

申请日：2001-08-30

Applicant: Akinobu Shibuya ,  Shintaro Yamamichi ,  Toru Mori ,  Takao Yamazaki ,  Yuzo Shimada

Inventor： Akinobu Shibuya ,  Shintaro Yamamichi ,  Toru Mori ,  Takao Yamazaki ,  Yuzo Shimada

IPC: H01L27178

CPC classification number: H01L23/49827 ,  H01L23/49822 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A capacitor has a lower electrode, a dielectric thin film, an upper electrode, and an insulation cover layer formed on an insulation substrate made of an organic film or a ceramic material, and through holes formed at positions corresponding to input and output pads of a semiconductor element or to input and output terminals of a semiconductor package, with electrodes for connection to input and output pads of a semiconductor element or to input and output terminals of a semiconductor package provided within through holes. In a method for mounting the capacitor, the capacitor is interposed between a flip-chip connected semiconductor element and a mounting substrate.