Schottky FET Fabricated With Gate Last Process
    22.
    发明申请
    Schottky FET Fabricated With Gate Last Process 失效
    采用栅极末端工艺制造的肖特基FET

    公开(公告)号:US20120007181A1

    公开(公告)日:2012-01-12

    申请号:US12834428

    申请日:2010-07-12

    IPC分类号: H01L27/12 H01L21/84

    摘要: A method for forming a field effect transistor (FET) includes forming a dummy gate on a top semiconductor layer of a semiconductor on insulator substrate; forming source and drain regions in the top semiconductor layer, wherein the source and drain regions are located in the top semiconductor layer on either side of the dummy gate; forming a supporting material over the source and drain regions adjacent to the dummy gate; removing the dummy gate to form a gate opening, wherein a channel region of the top semiconductor layer is exposed through the gate opening; thinning the channel region of the top semiconductor layer through the gate opening; and forming gate spacers and a gate in the gate opening over the thinned channel region.

    摘要翻译: 一种形成场效应晶体管(FET)的方法包括在绝缘体上半导体衬底的顶部半导体层上形成一个虚拟栅极; 在顶部半导体层中形成源极和漏极区域,其中源极和漏极区域位于虚拟栅极的任一侧的顶部半导体层中; 在与所述虚拟栅极相邻的所述源极和漏极区域上形成支撑材料; 去除所述伪栅极以形成栅极开口,其中所述顶部半导体层的沟道区域通过所述栅极开口暴露; 通过栅极开口来稀薄顶部半导体层的沟道区域; 以及在所述变薄的通道区域上的所述栅极开口中形成栅极间隔物和栅极。

    Schottky FET With All Metal Gate
    24.
    发明申请
    Schottky FET With All Metal Gate 审中-公开
    所有金属门肖特基FET

    公开(公告)号:US20110248343A1

    公开(公告)日:2011-10-13

    申请号:US12755720

    申请日:2010-04-07

    IPC分类号: H01L29/78 H01L21/336

    摘要: A method for forming a Schottky field effect transistor (FET) includes forming a gate stack on a silicon substrate, the gate stack comprising a gate polysilicon on top of a gate metal layer; depositing a metal layer over the gate polysilicon and the silicon substrate; annealing the metal layer, the gate polysilicon, and the silicon substrate such that the metal layer fully consumes the gate polysilicon to form a gate silicide and reacts with portions of the silicon substrate to form source/drain silicide regions in the silicon substrate; and in the event a portion of the metal layer does not react with the gate polysilicon or the silicon substrate, removing the unreacted portion of the metal layer.

    摘要翻译: 一种用于形成肖特基场效应晶体管(FET)的方法包括在硅衬底上形成栅极堆叠,所述栅叠层在栅极金属层的顶部包括栅极多晶硅; 在栅极多晶硅和硅衬底上沉积金属层; 使金属层,栅极多晶硅和硅衬底退火,使得金属层完全消耗栅极多晶硅以形成栅极硅化物,并与硅衬底的部分反应以在硅衬底中形成源极/漏极硅化物区域; 并且在金属层的一部分不与栅极多晶硅或硅衬底反应的情况下,去除金属层的未反应部分。

    Schottky Junction Source/Drain FET Fabrication Using Sulfur or Flourine Co-Implantation
    25.
    发明申请
    Schottky Junction Source/Drain FET Fabrication Using Sulfur or Flourine Co-Implantation 审中-公开
    肖特基连接源/排水FET使用硫磺或者氟植物共同植入

    公开(公告)号:US20110241115A1

    公开(公告)日:2011-10-06

    申请号:US12754079

    申请日:2010-04-05

    摘要: A Schottky field effect transistor (FET) includes a gate stack located on a silicon on insulator (SOI) layer, the gate stack comprising a gate silicide region; and source/drain silicide regions located in the SOI layer, the source/drain silicide regions comprising and at least one of sulfur and fluorine, wherein an interface comprising arsenic is located between each of the source/drain silicide regions and the SOI layer. A method of forming a contact, the contact comprising a silicide region adjacent to a silicon region, includes co-implanting the silicide region with arsenic and at least one of sulfur and fluorine; and drive-in annealing the co-implanted silicide region to diffuse the arsenic to an interface between the silicide region and the silicon region.

    摘要翻译: 肖特基场效应晶体管(FET)包括位于绝缘体上硅(SOI)层上的栅极堆叠,栅极叠层包括栅极硅化物区域; 位于SOI层中的源极/漏极硅化物区域,源极/漏极硅化物区域包括硫和氟中的至少一个,其中包含砷的界面位于每个源/漏硅化物区域和SOI层之间。 一种形成接触的方法,包括与硅区相邻的硅化物区的接触包括将砷化硅区域与砷和硫和氟中的至少一种共同注入; 并且将共注入的硅化物区域驱入退火以将砷扩散到硅化物区域和硅区域之间的界面。

    Method for Forming an SOI Schottky Source/Drain Device to Control Encroachment and Delamination of Silicide
    26.
    发明申请
    Method for Forming an SOI Schottky Source/Drain Device to Control Encroachment and Delamination of Silicide 有权
    用于形成SOI肖特基源/排水装置以控制硅化物的侵蚀和分层的方法

    公开(公告)号:US20110230017A1

    公开(公告)日:2011-09-22

    申请号:US12726736

    申请日:2010-03-18

    IPC分类号: H01L21/336

    CPC分类号: H01L29/7839 H01L29/78654

    摘要: A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

    摘要翻译: 提供一种制造肖特基场效应晶体管的方法,其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底,其中第一半导体层具有小于10.0nm的厚度。 栅极结构直接形成在第一半导体层上。 凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。 凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。 在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。

    Image processing system and method for simulating real effects of natural weather in video film
    27.
    发明申请
    Image processing system and method for simulating real effects of natural weather in video film 审中-公开
    影像影像自然天气影像处理系统及模拟方法

    公开(公告)号:US20100153078A1

    公开(公告)日:2010-06-17

    申请号:US12591337

    申请日:2009-11-17

    申请人: Zhen Zhang

    发明人: Zhen Zhang

    IPC分类号: G06G7/48 G06F17/10 G09G5/02

    摘要: The present invention is to provide an image processing system and a method thereof implemented to a series of images in a video film of an outdoor scene, which includes: defining types of free-falling objects (such as raindrops, snowflakes or hailstones) related to natural weather; reading information of a selected type of the free-falling objects so as to randomly generate falling positions and vertical falling textures of the free-falling objects in each image; detecting a grayscale value of the image, and defining a certain region of the image where the grayscale value exceeds a predetermined grayscale value as a deposited region; simulating a deposited status of the free-falling objects in each deposited region; and integrating the vertical falling texture and the deposited status into the video film for simulating the free-falling objects in the images, so as to produce effects approximating real effects of natural weather in the video film.

    摘要翻译: 本发明提供一种对户外场景的影像中的一系列图像实施的图像处理系统及其方法,其特征在于,包括:定义与自然落下的物体(例如雨滴,雪花或冰雹)有关的类型 自然天气 读取所选择的自由落体物体的信息,以随机地生成每个图像中的自由落体物体的下降位置和垂直落下的纹理; 检测图像的灰度值,并且将灰度值超过预定灰度值的图像的特定区域定义为沉积区域; 模拟每个沉积区域中自由落体物体的沉积状态; 并将垂直下落纹理和沉积状态整合到视频胶片中,以模拟图像中的自由落体物体,从而产生逼近视频胶片中自然天气的实际效果的效果。

    ALGORITHMS FOR MULTIVARIANT MODELS TO COMBINE A PANEL OF BIOMARKERS FOR ASSESSING THE RISK OF DEVELOPING OVARIAN CANCER
    28.
    发明申请
    ALGORITHMS FOR MULTIVARIANT MODELS TO COMBINE A PANEL OF BIOMARKERS FOR ASSESSING THE RISK OF DEVELOPING OVARIAN CANCER 审中-公开
    用于组合生物标记物面板以评估发展中的OVARIAN癌症的风险的多种模型的算法

    公开(公告)号:US20100068818A1

    公开(公告)日:2010-03-18

    申请号:US12418332

    申请日:2009-04-03

    申请人: Zhen Zhang

    发明人: Zhen Zhang

    摘要: The present invention provides methods for assessing a patient's risk of having and/or developing ovarian cancer. Also, methods for evaluating the ovarian cancer state of a patient are described herein. These methods involve the detection, analysis, and classification of biological patterns in biological samples. The biological patterns are obtained using, for example, mass spectrometry systems and other techniques. The present invention also includes therapeutic and prophylactic agents that target the biomarkers described herein. Also, the present invention provides methods for the treatment of ovarian cancer using the markers described herein or agents that mimic the properties of these markers.

    摘要翻译: 本发明提供了评估患者患有和/或发展为卵巢癌的风险的方法。 此外,本文描述了用于评估患者的卵巢癌状态的方法。 这些方法涉及生物样品中生物样本的检测,分析和分类。 使用例如质谱系统和其它技术获得生物学模式。 本发明还包括靶向本文所述的生物标志物的治疗和预防剂。 此外,本发明提供使用本文所述的标记物治疗卵巢癌的方法或模拟这些标记的性质的试剂。

    Method and system for extracting web query interfaces
    30.
    发明授权
    Method and system for extracting web query interfaces 有权
    Web查询界面提取方法和系统

    公开(公告)号:US07552116B2

    公开(公告)日:2009-06-23

    申请号:US10913721

    申请日:2004-08-06

    IPC分类号: G06F17/30 G06F17/27

    摘要: A computer program product being embodied on a computer readable medium for extracting semantic information about a plurality of documents being accessible via a computer network, the computer program product including computer-executable instructions for: generating a plurality of tokens from at least one of the documents, each token being indicative of a displayed item and a corresponding position; and, constructing at least one parse tree indicative of a semantic structure of the at least one document from the tokens dependently upon a grammar being indicative of presentation conventions.

    摘要翻译: 一种计算机程序产品,其体现在计算机可读介质上,用于提取关于可通过计算机网络访问的多个文档的语义信息,所述计算机程序产品包括计算机可执行指令,用于:从至少一个文档生成多个令牌 每个标记指示显示的项目和相应的位置; 并且依赖于表示呈现约定的语法,从令牌构建指示所述至少一个文档的语义结构的至少一个解析树。