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21.
公开(公告)号:US20250077834A1
公开(公告)日:2025-03-06
申请号:US18954415
申请日:2024-11-20
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Xiaoyong LIU , Lei XU , Brian R. YORK , Cherngye HWANG , Hisashi TAKANO
IPC: G06N3/04
Abstract: The present disclosure is generally related to a deep neural network (DNN) device comprising a plurality of spin-orbit torque (SOT) cells. The DNN device comprises an array comprising n rows and m columns of nodes, each row of nodes coupled to one of n first conductive lines, each column of nodes coupled to one of m second conductive lines, each node of the n rows and m columns of nodes comprising a plurality of SOT cells, each SOT cell comprising: at least one SOT layer, at least one ferromagnetic (FM) layer, and a controller configured to store at least one corresponding weight of an n×m array of weights of a neural network in each of the SOT cell. The FM layer may comprise two or more domains, two or more elliptical arms, or two or more states.
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22.
公开(公告)号:US20250006221A1
公开(公告)日:2025-01-02
申请号:US18229785
申请日:2023-08-03
Inventor: Quang LE , Xiaoyong LIU , Cherngye HWANG , Brian R. YORK , Son T. LE , Sharon Swee Ling BANH , Maki MAEDA , Fan TUO , Yu TAO , Hisashi TAKANO , Nam Hai PHAM
IPC: G11B5/39
Abstract: The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.
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公开(公告)号:US20240423098A1
公开(公告)日:2024-12-19
申请号:US18645189
申请日:2024-04-24
Inventor: Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Hisashi TAKANO , Nam Hai PHAM
Abstract: The present disclosure generally relate to an integrated circuit utilizing spin orbital-spin orbital (SO-SO) logic. The integrated circuit comprises a plurality of SO-SO logic cells, where each SO-SO logic cell comprises a first spin orbit torque (SOT1) layer, a second spin orbit torque (SOT2) layer, and a ferromagnetic layer disposed between the SOT1 and SOT2 layer. Each SO-SO logic cell is configured for: a first current path that is in plane to a plane of the SOT1 layer, and a second current path that is perpendicular to a plane of the SOT2 layer, the second current path being configured to extend into the ferromagnetic layer. The integrated circuit further comprises a common voltage source connected to each SOT device, and one or more interconnects disposed between adjacent SOT devices of the plurality of SOT devices, the one or more interconnects connecting the adjacent SOT devices together.
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公开(公告)号:US20240144965A1
公开(公告)日:2024-05-02
申请号:US18228529
申请日:2023-07-31
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Rohan Babu NAGABHIRAVA , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Son T. LE , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
CPC classification number: G11B5/39 , G11B5/11 , G11B2005/3996
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S1), a free layer (FL) disposed over the BiSb layer, and a second shield (S2) disposed over the FL. The S1, the FL, and the S2 are disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and/or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the S2 to the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the S2 to the S1.
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公开(公告)号:US20240006109A1
公开(公告)日:2024-01-04
申请号:US17855045
申请日:2022-06-30
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Michael A. GRIBELYUK , Xiaoyu XU , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
IPC: H01F10/32 , C30B29/52 , C23C8/12 , H01L27/22 , H01L43/04 , H01L43/06 , H01L43/10 , H01L43/14 , G11B5/39
CPC classification number: H01F10/324 , C30B29/52 , C23C8/12 , H01L27/222 , H01L43/04 , H01L43/06 , H01L43/10 , H01L43/14 , G11B5/3909 , G11B2005/0021
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.
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26.
公开(公告)号:US20230386721A1
公开(公告)日:2023-11-30
申请号:US18232256
申请日:2023-08-09
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Brian R. YORK , Cherngye HWANG , Susumu OKAMURA , Michael A. GRIBELYUK , Xiaoyong LIU , Kuok San HO , Hisashi TAKANO
CPC classification number: H01F10/329 , H10N50/85 , H01F10/3254 , G11B2005/3996 , H10N52/80 , H10N52/00 , G11B5/39 , H10B61/00
Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.
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公开(公告)号:US20230223043A1
公开(公告)日:2023-07-13
申请号:US17647809
申请日:2022-01-12
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Hongquan JIANG , Cherngye HWANG , David J. SEAGLE , Xiaoyong LIU
CPC classification number: G11B5/11 , G11B5/3133
Abstract: The present disclosure generally relates to a tape head of a tape drive, and methods of forming thereof. In one embodiment, a tape head for magnetic storage devices comprises a trailing shield, a leading shield, a first write pole coupled to the trailing shield, a second write pole coupled to the leading shield, and side shields spaced from the first write pole and the second write pole by a thin insulation layer. The side shields are further disposed between the trailing shield and the leading shield. In another embodiment, a tape head for magnetic storage devices comprises a main pole disposed between a trailing shield and a leading shield and a side shield disposed adjacent to the main pole. The side shield is further disposed between the trailing shield and the leading shield and spaced from the main pole by a thin insulation layer.
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公开(公告)号:US20220358957A1
公开(公告)日:2022-11-10
申请号:US17868586
申请日:2022-07-19
Applicant: Western Digital Technologies, Inc.
Inventor: Suping SONG , Zhanjie LI , Kuok San HO , Quang LE , Alexander M. ZELTSER
Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a heavy metal layer disposed between the main pole and the trailing shield at the MFS. Spin-orbit torque (SOT) is generated from the heavy metal layer and transferred to a surface of the main pole as a current passes through the heavy metal layer in a cross-track direction. The SOT executes a torque on the surface magnetization of the main pole, which reduces the magnetic flux shunting from the main pole to the trailing shield. With the reduced magnetic flux shunting from the main pole to the trailing shield, write-ability is improved.
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公开(公告)号:US20210408370A1
公开(公告)日:2021-12-30
申请号:US16917334
申请日:2020-06-30
Applicant: Western Digital Technologies, Inc.
Inventor: Brian R. YORK , Cherngye HWANG , Alan SPOOL , Michael GRIBELYUK , Quang LE
Abstract: A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.
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公开(公告)号:US20210158839A1
公开(公告)日:2021-05-27
申请号:US17001593
申请日:2020-08-24
Applicant: Western Digital Technologies, Inc.
Inventor: Thao A. NGUYEN , Michael Kuok San HO , Zhigang BAI , Zhanjie LI , Quang LE
Abstract: The present disclosure generally relates to a magnetic media drive employing a magnetic recording head. The magnetic recording head comprises a first write head, a second write head, at least one read head, and a thermal fly height control element. The first write head is a wide writing write head comprising a first main pole and a first trailing shield. The second write head a narrow writing write head comprising a second main pole, a trailing gap, a second trailing shield, and one or more side shields. The first main pole has a shorter height and a greater width than the second main pole. The second main pole has a curved or U-shaped surface disposed adjacent to the trailing gap. The thermal fly height control element and the at least one read head are aligned with a center axis of the second main pole of the second write head.
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