-
公开(公告)号：US20120035351A1
公开(公告)日：2012-02-09
申请号：US13016127
申请日：2011-01-28
IPC分类号： C07F3/00 , H01L21/3205 , C07D403/06 , C07D233/58 , C07D401/06 , C07D487/06 , C07D405/06 , C30B25/02 , C07D471/18
CPC分类号： H01L21/28556 , C07D233/54
摘要： Sterically hindered imidazole ligands are described, along with their synthesis, which are capable of coordinating to Group 2 metals, such as: calcium, magnesium, strontium, in an eta-5 coordination mode which permits the formation of monomeric or dimeric volatile complexes.A compound comprising one or more polysubstituted imidazolate anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-imidazolate anion.Synthesis of the novel compounds and their use to form BST films is also contemplated
摘要翻译： 描述了咪唑配位体以及它们的合成，它们能够以能够形成单体或二聚挥发性络合物的eta-5配位模式配合第2族金属，例如：钙，镁，锶。 包含与选自钡，锶，镁，镭或钙的金属或其混合物配位的一种或多种多取代咪唑酸盐阴离子的化合物。 或者，一个阴离子可以被第二个非咪唑酸阴离子取代。 还考虑了新型化合物的合成及其用于形成BST膜的用途
-
公开(公告)号：US20100130779A1
公开(公告)日：2010-05-27
申请号：US12613952
申请日：2009-11-06
IPC分类号： C07F3/00
CPC分类号： C07C279/12
摘要： The present invention is directed to Group 2 metal 1,3,5-triazapentadiene compositions, such as bis(1,5-bisN,N′(methoxyethyl)-2,4-bis(dimethylamido)-1,3,5-triazapentadienate) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium, strontium titanate ternary films or strontium titanate binary films for electronic materials device manufacturing.
摘要翻译： 本发明涉及第2族金属1,3,5-三氮戊二烯组合物，例如双（1,5-双N，N'（甲氧基乙基）-2,4-双（二甲基氨基）-1,3,5-三氮杂双 ）钡; 以及通过化学气相沉积，脉冲化学气相沉积或原子层沉积沉积这种金属配体组合物的金属以产生第二族金属含有膜，例如钡，钛酸锶三元膜或用于电子材料器件制造的钛酸锶二元膜 。
-
公开(公告)号：US06869876B2
公开(公告)日：2005-03-22
申请号：US10324781
申请日：2002-12-20
IPC分类号： C23C16/14 , C23C10/60 , C23C16/08 , C23C16/18 , C23C16/30 , C23C16/56 , C23C26/00 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C10/60 , C23C16/08 , C23C16/30 , C23C16/56 , C23C26/00 , H01L21/28562 , H01L21/76846 , H01L21/76862 , H01L21/76871
摘要： In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at least two precursors: a halogen-containing precursor and a metal-containing precursor. The metal halide film is then exposed to a reducing agent to form the metal film. In certain preferred embodiments, the metal halide film is exposed to the reducing agent prior to the completion of the growing step.
摘要翻译： 在本发明中，生长金属卤化物膜，然后将其还原成金属膜，而不是直接在基板表面上生长金属膜。 在某些实施方案中，金属卤化物膜从至少两种前体生长：含卤素的前体和含金属的前体。 然后将金属卤化物膜暴露于还原剂以形成金属膜。 在某些优选的实施方案中，在生长步骤完成之前，将金属卤化物膜暴露于还原剂。
-
24.发明申请Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants 有权Porogen，Porogenated前体及其使用方法提供具有低介电常数的多孔有机硅玻璃膜公开(公告)号：US20110143032A1
公开(公告)日：2011-06-16
申请号：US13031387
申请日：2011-02-21
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274
摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。
-
公开(公告)号：US20110120875A1
公开(公告)日：2011-05-26
申请号：US12785041
申请日：2010-05-21
CPC分类号： C07F3/003
摘要： A compound comprising one or more polyfunctionalized pyrrolyl anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-pyrrolyl anion.Synthesis of the novel compounds and their use to form BST films is also contemplated.
摘要翻译： 包含与选自钡，锶，镁，镭或钙的金属或其混合物配位的一种或多种多官能化的吡咯基阴离子的化合物。 或者，一个阴离子可以被第二个非吡咯基阴离子取代。 还考虑了新型化合物的合成及其用于形成BST膜的用途。
-
公开(公告)号：US20070193026A1
公开(公告)日：2007-08-23
申请号：US11481444
申请日：2006-07-06
申请人： Chun Christine Dong , Eugene Joseph Karwacki , Richard E. Patrick , David Allen Roberts , Robert Krantz Pinschmidt , John Anthony Thomas Norman , John Christopher Ivankovits
发明人： Chun Christine Dong , Eugene Joseph Karwacki , Richard E. Patrick , David Allen Roberts , Robert Krantz Pinschmidt , John Anthony Thomas Norman , John Christopher Ivankovits
IPC分类号： B23K35/38
CPC分类号： H05K3/105 , C23C18/08 , H01L21/4867 , H05K2203/087 , H05K2203/1157 , H05K2203/121 , Y10T29/49117 , Y10T29/49126 , Y10T29/49128 , Y10T29/49155
摘要： This invention is directed to a method of forming electrical conductors comprised of conductive metals generally carried on a substrate. In the method, a conductor formulation generally comprised of metal particles or metal precursor or mixture thereof, typically in the form of an ink or paste, is applied to the substrate and converted into a conductive metal by application of sufficient heat and for a sufficient time to effect sintering thereof while in the presence of a negatively charged ionic reducing gas.
摘要翻译： 本发明涉及一种形成电导体的方法，该导体由通常载于衬底上的导电金属组成。 在该方法中，通常由金属颗粒或金属前体或其混合物（通常为油墨或糊状物）组成的导体制剂施加到基底上，并通过施加足够的热量并足够的时间转化为导电金属 在负电荷的离子还原气体的存在下进行烧结。
-
公开(公告)号：US07034169B1
公开(公告)日：2006-04-25
申请号：US11111455
申请日：2005-04-21
CPC分类号： C23C16/18 , C07F1/005 , C07F7/0803 , Y10T428/31678
摘要： Metal complexes, containing copper, silver, gold, cobalt, ruthenium, rhodium, platinum, palladium, nickel, osmium, and/or indium, and methods for making and using same are described herein. In certain embodiments, the metal complexes described herein may be used as precursors to deposit metal or metal-containing films on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
摘要翻译： 包含铜，银，金，钴，钌，铑，铂，钯，镍，锇和/或铟的金属络合物及其制备和使用方法在此描述。 在某些实施方案中，本文所述的金属络合物可用作通过例如原子层沉积或化学气相沉积条件在基底上沉积金属或含金属膜的前体。
-
28.发明授权Liquid precursor mixtures for deposition of multicomponent metal containing materials 失效用于沉积多组分含金属材料的液体前体混合物公开(公告)号：US06238734B1
公开(公告)日：2001-05-29
申请号：US09350074
申请日：1999-07-08
IPC分类号： C23C1618
CPC分类号： C23C18/1216 , C23C16/34 , C23C16/40 , C23C16/401 , C23C16/405 , C23C18/1225 , C23C18/1254 , C23C18/1258
摘要： The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.
摘要翻译： 本发明是用于沉积混合金属或金属化合物层的组合物，其包含至少两种金属 - 配体复合物前体的无溶剂混合物，其中所述混合物在环境条件下为液体，并且所述配体相同，并且选自 由烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物组成的组。 本发明还是一种在电子材料的基底上沉积多个金属或金属化合物层的方法，包括：a）在环境条件下提供构成液体的两种或更多种金属 - 配体复合物前体的无溶剂混合物， 卤化物，氢化物，酰胺，酰亚胺，叠氮化物，硝酸盐，环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物;其中配体是相同的并且选自烷基，醇盐，卤化物， b）通过直接液体注入将无溶剂混合物输送到闪蒸区域以蒸发无溶剂混合物; c）在沉积条件下使所述衬底与无溶剂混合物的所得蒸气接触，以及c）从所述无溶剂混合物在所述衬底上沉积多个金属或金属化合物层。
-
公开(公告)号：US06096913A
公开(公告)日：2000-08-01
申请号：US329417
申请日：1999-06-10
IPC分类号： C07C45/77 , C07B61/00 , C07C49/167 , C07F1/00 , C07F1/08 , C07F7/08 , C07F19/00 , C23C16/18 , H01L21/28 , H01L21/285 , C23C16/00
摘要： In a process for the synthesis of a first metal-ligand complex, M.sup.+n (L.sup.-).sub.n, where n.gtoreq.1, from a metal compound precursor and a ligand precursor, where the metal of the metal compound precursor may during the synthesis change to a valence in excess of n; the improvement, to suppress formation of a second metal-ligand complex of the metal with a valence in excess of n, of adding the elemental form of the metal to the synthesis of the first metal-ligand complex.
摘要翻译： 在金属化合物前体和配体前体合成第一金属 - 配体络合物M + n（L）n，其中n> / = 1的方法中，其中金属化合物前体的金属可以在 合成变为超过n的化合价; 改进，以抑制金属元素形式向第一金属 - 配体络合物的合成中添加元素形式的金属的第二金属 - 配体络合物，其价态超过n。
-
公开(公告)号：US08703103B2
公开(公告)日：2014-04-22
申请号：US13016127
申请日：2011-01-28
IPC分类号： A61B5/055
CPC分类号： H01L21/28556 , C07D233/54
摘要： Sterically hindered imidazole ligands are described, along with their synthesis, which are capable of coordinating to Group 2 metals, such as: calcium, magnesium, strontium, in an eta-5 coordination mode which permits the formation of monomeric or dimeric volatile complexes.A compound comprising one or more polysubstituted imidazolate anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-imidazolate anion.Synthesis of the novel compounds and their use to form BST films is also contemplated.
摘要翻译： 描述了咪唑配位体以及它们的合成，它们能够以能够形成单体或二聚挥发性络合物的eta-5配位模式配合第2族金属，例如：钙，镁，锶。 包含与选自钡，锶，镁，镭或钙的金属或其混合物配位的一种或多种多取代咪唑酸盐阴离子的化合物。 或者，一个阴离子可以被第二个非咪唑酸阴离子取代。 还考虑了新型化合物的合成及其用于形成BST膜的用途。
-
-
-
-
-
-
-
-
-
搜索结果
52 条记录 (耗时 0.022 秒)