公开(公告)号：US06500499B1

公开(公告)日：2002-12-31

申请号：US09522634

申请日：2000-03-10

申请人： Yoshihide Senzaki ,  Arthur Kenneth Hochberg ,  David Allen Roberts ,  John Anthony Thomas Norman ,  Glenn Baldwin Alers ,  Robert McLemore Fleming

发明人： Yoshihide Senzaki ,  Arthur Kenneth Hochberg ,  David Allen Roberts ,  John Anthony Thomas Norman ,  Glenn Baldwin Alers ,  Robert McLemore Fleming

IPC分类号： B05D306

CPC分类号： C23C16/4481 ,  C23C16/40

摘要： Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.

摘要翻译： 通过CVD从金属络合物的液体混合物中通过直接液体注入和通过其它前体分散方法如气溶胶递送以及随后的退火以改善沉积膜的电性能，可以通过CVD沉积复杂的含金属的薄膜。 该方法在电介质，铁电体，阻挡金属/电极，超导体，催化剂和保护涂层的微电子器件制造中具有商业成功的潜力。 已经研究了该方法的应用，特别是ZrSnTiOx（锆钛酸锌或ZTT）和HfSnTiOx（钛酸铪钛酸盐或HTT）薄膜的CVD。

公开(公告)号：US06503561B1

公开(公告)日：2003-01-07

申请号：US09546452

申请日：2000-04-10

申请人： Yoshihide Senzaki ,  David Allen Roberts ,  John Anthony Thomas Norman ,  Arthur Kenneth Hochberg

发明人： Yoshihide Senzaki ,  David Allen Roberts ,  John Anthony Thomas Norman ,  Arthur Kenneth Hochberg

IPC分类号： C23C1618

CPC分类号： C23C18/1225 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1258

摘要： The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.

摘要翻译： 本发明是用于沉积混合金属或金属化合物层的组合物，其包含至少两种金属 - 配体复合物前体的无溶剂混合物，其中所述混合物在环境条件下为液体，并且所述配体相同，并且选自 由烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物组成的组。 本发明还是一种在电子材料的基底上沉积多个金属或金属化合物层的方法，包括：a）在环境条件下提供构成液体的两种或更多种金属 - 配体复合物前体的无溶剂混合物， 其中配体相同并且选自烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物，硝酸盐，环戊二烯基，羰基，吡唑及其氟，氧和氮取代的类似物; b）通过直接液体注入将无溶剂混合物输送到闪蒸区域以蒸发无溶剂混合物; c）在沉积条件下使所述衬底与无溶剂混合物的所得蒸气接触，以及c）从所述无溶剂混合物在所述衬底上沉积多个金属或金属化合物层。

公开(公告)号：US06238734B1

公开(公告)日：2001-05-29

申请号：US09350074

申请日：1999-07-08

申请人： Yoshihide Senzaki ,  David Allen Roberts ,  John Anthony Thomas Norman

发明人： Yoshihide Senzaki ,  David Allen Roberts ,  John Anthony Thomas Norman

IPC分类号： C23C1618

CPC分类号： C23C18/1216 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C18/1225 ,  C23C18/1254 ,  C23C18/1258

摘要： The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.

摘要翻译： 本发明是用于沉积混合金属或金属化合物层的组合物，其包含至少两种金属 - 配体复合物前体的无溶剂混合物，其中所述混合物在环境条件下为液体，并且所述配体相同，并且选自 由烷基，醇盐，卤化物，氢化物，酰胺，酰亚胺，叠氮化物环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物组成的组。 本发明还是一种在电子材料的基底上沉积多个金属或金属化合物层的方法，包括：a）在环境条件下提供构成液体的两种或更多种金属 - 配体复合物前体的无溶剂混合物， 卤化物，氢化物，酰胺，酰亚胺，叠氮化物，硝酸盐，环戊二烯基，羰基以及它们的氟，氧和氮取代的类似物;其中配体是相同的并且选自烷基，醇盐，卤化物， b）通过直接液体注入将无溶剂混合物输送到闪蒸区域以蒸发无溶剂混合物; c）在沉积条件下使所述衬底与无溶剂混合物的所得蒸气接触，以及c）从所述无溶剂混合物在所述衬底上沉积多个金属或金属化合物层。

公开(公告)号：US06096913A

公开(公告)日：2000-08-01

申请号：US329417

申请日：1999-06-10

申请人： John Anthony Thomas Norman ,  Yoshihide Senzaki ,  David Allen Roberts

发明人： John Anthony Thomas Norman ,  Yoshihide Senzaki ,  David Allen Roberts

IPC分类号： C07C45/77 ,  C07B61/00 ,  C07C49/167 ,  C07F1/00 ,  C07F1/08 ,  C07F7/08 ,  C07F19/00 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C23C16/00

CPC分类号： C07F1/005 ,  C23C16/18

摘要： In a process for the synthesis of a first metal-ligand complex, M.sup.+n (L.sup.-).sub.n, where n.gtoreq.1, from a metal compound precursor and a ligand precursor, where the metal of the metal compound precursor may during the synthesis change to a valence in excess of n; the improvement, to suppress formation of a second metal-ligand complex of the metal with a valence in excess of n, of adding the elemental form of the metal to the synthesis of the first metal-ligand complex.

摘要翻译： 在金属化合物前体和配体前体合成第一金属 - 配体络合物M + n（L）n，其中n> / = 1的方法中，其中金属化合物前体的金属可以在 合成变为超过n的化合价; 改进，以抑制金属元素形式向第一金属 - 配体络合物的合成中添加元素形式的金属的第二金属 - 配体络合物，其价态超过n。

公开(公告)号：US06869876B2

公开(公告)日：2005-03-22

申请号：US10324781

申请日：2002-12-20

申请人： John Anthony Thomas Norman ,  David Allen Roberts ,  Melanie Anne Boze

发明人： John Anthony Thomas Norman ,  David Allen Roberts ,  Melanie Anne Boze

IPC分类号： C23C16/14 ,  C23C10/60 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/56 ,  C23C26/00 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C10/60 ,  C23C16/08 ,  C23C16/30 ,  C23C16/56 ,  C23C26/00 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76871

摘要： In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at least two precursors: a halogen-containing precursor and a metal-containing precursor. The metal halide film is then exposed to a reducing agent to form the metal film. In certain preferred embodiments, the metal halide film is exposed to the reducing agent prior to the completion of the growing step.

摘要翻译： 在本发明中，生长金属卤化物膜，然后将其还原成金属膜，而不是直接在基板表面上生长金属膜。 在某些实施方案中，金属卤化物膜从至少两种前体生长：含卤素的前体和含金属的前体。 然后将金属卤化物膜暴露于还原剂以形成金属膜。 在某些优选的实施方案中，在生长步骤完成之前，将金属卤化物膜暴露于还原剂。

公开(公告)号：US06818783B2

公开(公告)日：2004-11-16

申请号：US10323480

申请日：2002-12-19

申请人： John Anthony Thomas Norman ,  David Allen Roberts ,  Morteza Farnia ,  Melanie Anne Boze

发明人： John Anthony Thomas Norman ,  David Allen Roberts ,  Morteza Farnia ,  Melanie Anne Boze

IPC分类号： C07F108

CPC分类号： C23C16/45553 ,  C07F1/005 ,  C07F1/08 ,  C07F5/02 ,  C07F7/10

摘要： This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals. A structural representation of the compounds of this invention is shown below: wherein M and M′ are each a metal such as Cu, Ag, Au and Ir; X and X′ can be N or O; Y and Y′ can be Si, C; Sn, Ge, Al, or B; and Z and Z′ can be C, N, or O. Substituents represented by R1, R2, R3, R4, R5, R6, R1′, R2′, R3′, R4′, R5′, and R6′ will vary depending on the ring atom to which they are attached. This invention is also directed to depositing metal and metal-containing films on a substrate, under ALD or CVD conditions, using the above novel compounds as precursors.

摘要翻译： 本发明涉及一组具有可逆地结合在环中并含有碳，氮，硅和/或其它金属的金属如铜的新型同源八元环化合物。 本发明化合物的结构表示如下：其中M和M'各自为金属如Cu，Ag，Au和Ir; X和X'可以是N或O; Y和Y'可以是Si，C; Sn，Ge，Al或B; Z，Z'可以是C，N或O.取代基由R1，R2，R3，R4，R5，R6，R1'，R2'，R3'，R4'，R5'和R6' 在它们所连接的环原子上。 本发明还涉及使用上述新型化合物作为前体，在ALD或CVD条件下在基底上沉积金属和含金属膜。

公开(公告)号：US20100038785A1

公开(公告)日：2010-02-18

申请号：US12192603

申请日：2008-08-15

申请人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

发明人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L21/76846

摘要： We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.

摘要翻译： 我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。 我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。 已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。 已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金形成。

公开(公告)号：US07919409B2

公开(公告)日：2011-04-05

申请号：US12192603

申请日：2008-08-15

申请人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

发明人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

IPC分类号： H01L21/285

CPC分类号： H01L21/76846

摘要： We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.

摘要翻译： 我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。 我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。 已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。 已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金化。

公开(公告)号：US20070193026A1

公开(公告)日：2007-08-23

申请号：US11481444

申请日：2006-07-06

申请人： Chun Christine Dong ,  Eugene Joseph Karwacki ,  Richard E. Patrick ,  David Allen Roberts ,  Robert Krantz Pinschmidt ,  John Anthony Thomas Norman ,  John Christopher Ivankovits

发明人： Chun Christine Dong ,  Eugene Joseph Karwacki ,  Richard E. Patrick ,  David Allen Roberts ,  Robert Krantz Pinschmidt ,  John Anthony Thomas Norman ,  John Christopher Ivankovits

IPC分类号： B23K35/38

CPC分类号： H05K3/105 ,  C23C18/08 ,  H01L21/4867 ,  H05K2203/087 ,  H05K2203/1157 ,  H05K2203/121 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155

摘要： This invention is directed to a method of forming electrical conductors comprised of conductive metals generally carried on a substrate. In the method, a conductor formulation generally comprised of metal particles or metal precursor or mixture thereof, typically in the form of an ink or paste, is applied to the substrate and converted into a conductive metal by application of sufficient heat and for a sufficient time to effect sintering thereof while in the presence of a negatively charged ionic reducing gas.

摘要翻译： 本发明涉及一种形成电导体的方法，该导体由通常载于衬底上的导电金属组成。 在该方法中，通常由金属颗粒或金属前体或其混合物（通常为油墨或糊状物）组成的导体制剂施加到基底上，并通过施加足够的热量并足够的时间转化为导电金属 在负电荷的离子还原气体的存在下进行烧结。

公开(公告)号：US07119032B2

公开(公告)日：2006-10-10

申请号：US10924321

申请日：2004-08-23

申请人： Bing Ji ,  Stephen Andrew Motika ,  Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  David Allen Roberts

发明人： Bing Ji ,  Stephen Andrew Motika ,  Dingjun Wu ,  Eugene Joseph Karwacki, Jr. ,  David Allen Roberts

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01J37/32495 ,  B01J2219/024 ,  C23C16/4404

摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.