公开(公告)号：US20100059759A1

公开(公告)日：2010-03-11

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US07589000B2

公开(公告)日：2009-09-15

申请号：US11643675

申请日：2006-12-22

申请人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

发明人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/00

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。 因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

公开(公告)号：US20080299694A1

公开(公告)日：2008-12-04

申请号：US12127286

申请日：2008-05-27

申请人： Katsushi AKITA ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

发明人： Katsushi AKITA ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

摘要： In a semiconductor laser manufacturing method, a GaN single-crystal substrate is formed by slicing a GaN bulk crystal, grown on a c-plane, parallel to an a-plane which is perpendicular to the c-plane. In this substrate, crystal defects extending parallel to the c-axis direction do not readily exert an influence, and degradation of element characteristics due to crystal defects can be suppressed. Further, because the a-plane is a nonpolar plane, improved light emission efficiency and longer wavelengths can be achieved compared with the c-plane, which is a polar plane. Hence a semiconductor laser manufacturing method of this invention enables further improvement of the element characteristics of the semiconductor laser to be fabricated.

摘要翻译： 在半导体激光器制造方法中，通过在与c面垂直的a面平行的c面上生长的GaN块状晶体来形成GaN单晶衬底。 在该基板中，与c轴方向平行延伸的晶体缺陷不容易产生影响，可以抑制由于晶体缺陷引起的元件特性的劣化。 此外，由于a平面是非极性平面，与作为极平面的c面相比，可以实现提高的发光效率和更长的波长。 因此，本发明的半导体激光器制造方法能够进一步提高要制造的半导体激光器的元件特性。

公开(公告)号：US20080219910A1

公开(公告)日：2008-09-11

申请号：US12121806

申请日：2008-05-16

申请人： Hitoshi Kasai ,  Kensaku Motoki

发明人： Hitoshi Kasai ,  Kensaku Motoki

IPC分类号： C01B21/06

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/406

摘要： Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible.

摘要翻译： 制造具有从（0001）而不是（0001）位移的晶体取向的离轴GaN单晶独立基板的成本更低。 利用离轴（111）GaAs晶片作为起始衬底，将GaN气相沉积到起始衬底上，该衬底生长与起始衬底相同的偏轴角度和相同方向倾斜的GaN晶体。 通过在起始衬底上形成具有多个孔的掩模，通过掩模将GaN单晶层沉积，然后除去该取向的GaN基板，可以利用错误取向的（111）GaAs基板作为起始衬底， 起始底物。 可以制造具有0.1°至25°取向错误的GaN晶体。

公开(公告)号：US07396560B2

公开(公告)日：2008-07-08

申请号：US10487093

申请日：2002-03-18

申请人： Hachiro Nakanishi ,  Hidetoshi Oikawa ,  Shuji Okada ,  Hitoshi Kasai

发明人： Hachiro Nakanishi ,  Hidetoshi Oikawa ,  Shuji Okada ,  Hitoshi Kasai

IPC分类号： B05D7/00 ,  C08F2/46 ,  C08J7/18

CPC分类号： C30B7/00

摘要： A method for preparation of inorganic fine particle-organic crystal hybrid fine particle comprising; pouring an organic material having π-conjugated bond as a water soluble solution into aqueous dispersion in which inorganic fine particles of 50 nm or less selected from the compound group consisting of metal fine particles, semi-conductor fine particles, fine particles of inorganic fluorescent material and fine particle of inorganic luminescent material, are dispersed, co-precipitating said inorganic fine particle which forms a core into said organic material which forms a shell in said dispersion and forming shell of fine crystal of said organic material on the surface of the core of said inorganic fine particles of 50 nm or less by controlling the size of said inorganic fine particle and by controlling the adding amount of said organic material.

摘要翻译： 一种制备无机细颗粒 - 有机晶体杂化微粒的方法，包括： 将具有π-共轭键的有机材料作为水溶性溶液浇注到水分散体中，其中选自由金属微粒，半导体细颗粒，无机荧光材料的微粒组成的化合物组中的50nm或更小的无机细颗粒 和无机发光材料的微粒分散，将形成芯的无机细颗粒共沉淀到所述分散体中形成壳的所述有机材料中，并在所述芯的表面上形成所述有机材料的细晶的壳 通过控制所述无机细颗粒的尺寸并控制所述有机材料的添加量，所述无机细颗粒为50nm以下。

公开(公告)号：US08143140B2

公开(公告)日：2012-03-27

申请号：US12765357

申请日：2010-04-22

申请人： Hitoshi Kasai ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

发明人： Hitoshi Kasai ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L22/26 ,  H01L21/187 ,  H01L21/76251 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

摘要翻译： 提供了一种制造薄GaN膜接合衬底的方法，包括以下步骤：将GaN体结构体与GaN的类型或化学组成不同的衬底接合; 并且将GaN本体结晶体在距离其不同类型的衬底的界面至少0.1μm至多100μm的平面处分割，以在衬底上提供类型不同的GaN薄膜，其中， GaN体结晶体具有与不同类型的基板接合的表面，其最大表面粗糙度Rmax至多为20μm。 因此，包括具有类型不同的衬底的薄GaN接合衬底和GaN的薄膜牢固地连接在不同类型的衬底上的GaN基半导体器件和沉积在薄膜上的至少一个GaN基半导体层 的GaN，可以以低成本制造。

公开(公告)号：US20120034149A1

公开(公告)日：2012-02-09

申请号：US13235989

申请日：2011-09-19

申请人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hitoshi Kasai ,  Takuji Okahisa

发明人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hitoshi Kasai ,  Takuji Okahisa

IPC分类号： C01B21/06 ,  C30B25/02

CPC分类号： H01L33/325 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02664

摘要： The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

摘要翻译： 本发明涉及由具有（0001）面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-11面]的至少一个平面而获得的GaN结晶自立式基板， （0001）平面生长晶体区域的碳浓度为5×1016原子/ cm3以下的构成除了晶体侧面以外的构成晶面区域的晶体生长面， 硅浓度为5×10 17原子/ cm 3以上且2×10 18原子/ cm 3以下，氧浓度为1×10 17原子/ cm 3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下，硅浓度为5×10 17原子/ cm 3以下，氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。

公开(公告)号：US07816238B2

公开(公告)日：2010-10-19

申请号：US12137038

申请日：2008-06-11

申请人： Hideki Osada ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

发明人： Hideki Osada ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

IPC分类号： H01L21/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B25/183 ,  C30B29/406 ,  H01L29/045 ,  Y10S438/945 ,  Y10S438/973

摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.

摘要翻译： 具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，寿命等的改善的特性的发光元件的半导体器件，具有外延的衬底 提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。 低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。 平面方向相对于主表面的法线矢量在偏角方向上倾斜。

公开(公告)号：US20090212277A1

公开(公告)日：2009-08-27

申请号：US12390036

申请日：2009-02-20

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X

摘要翻译： 提供III族氮化物发光器件。 具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。 量子阱结构形成为具有410nm以上的发光峰值波长。 阱层的厚度为4nm以上，10nm以下。 阱层由InXGa1-XN（0.15 <= X <1，其中X是应变组成）组成。 氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。 该范围内的基面是半极性平面。

公开(公告)号：US20090130329A1

公开(公告)日：2009-05-21

申请号：US12067078

申请日：2006-03-10

申请人： Tsunenobu Onodera ,  Hidetoshi Oikawa ,  Hitoshi Kasai ,  Hachiro Nakanishi ,  Takashi Sekiguchi

发明人： Tsunenobu Onodera ,  Hidetoshi Oikawa ,  Hitoshi Kasai ,  Hachiro Nakanishi ,  Takashi Sekiguchi

IPC分类号： C08F2/48

CPC分类号： C23C18/14 ,  G02B1/04

摘要： A method for fabricating metal-coated organic crystal wherein a reaction of an organic crystal with transition metal salt in alkaline aqueous solution under visible light irradiation, wherein, when energy at the top of valence band of the organic crystal is defined as A (eV) and energy at the bottom of conduction band of the organic crystal is defined as B (eV), redox potential C (V) of transition metal ion or transition metal complex ion, when said transition metal salt is dissolved in the alkaline aqueous solution, these three parameters should satisfy the following relation (1): −A−4.5≧C≧−B−4.5  (1)

摘要翻译： 一种金属包覆的有机晶体的制造方法，其中在可见光照射下，碱性水溶液中的有机晶体与过渡金属盐的反应，其中当有机晶体的价带顶部的能量定义为A（eV） 并且有机晶体的导带底部的能量定义为过渡金属离子或过渡金属配合物离子的B（eV），氧化还原电位C（V），当所述过渡金属盐溶解在碱性水溶液中时，这些 三个参数应满足以下关系（1）：<？in-line-formula description =“In-line formula”end =“lead”？> - A-4.5> = C> = - B-4.5（1） ？in-line-formula description =“In-line Formulas”end =“tail”？>