摘要:
A semiconductor memory, comprising: a first memory cell transistor disposed on a semiconductor substrate; a second memory cell transistor disposed on the semiconductor substrate and having a first source-drain region in common with the first memory cell transistor; a first ferroelectric capacitor disposed with a via in between above a second source-drain region of the first memory cell transistor; a second ferroelectric capacitor disposed with a via in between above a second source-drain region of the second memory cell transistor; an interlayer dielectric disposed on the semiconductor substrate, as coating the memory cell transistors and the ferroelectric capacitors, the interlayer dielectric having a contact hole through which the first source-drain region is partially exposed at the bottom and upper electrodes of the first and second ferroelectric capacitors are partially exposed at the top; and a wiring layer filled into the contact hole, which connects the first source-drain region, the upper electrode of the first ferroelectric capacitor, and the second ferroelectric capacitor.
摘要:
There is provided a semiconductor storage device comprising a ferroelectric capacitor superior in barrier capability against penetration of hydrogen from all directions including a transverse direction. The device comprises a transistor formed on a semiconductor substrate, the ferroelectric capacitor formed above the transistor and including a lower electrode, a ferroelectric film, and an upper electrode, a first hydrogen barrier film which continuously surrounds side portions of a ferroelectric capacitor cell array constituted of a plurality of ferroelectric capacitors, and a second hydrogen barrier film which is formed above the ferroelectric capacitor cell array and which is brought into contact with the first hydrogen barrier film in the whole periphery.
摘要:
A semiconductor memory device including a memory cell block having a plurality of memory transistors formed on a semiconductor substrate. The memory transistors include first and second impurity-diffused regions and a gate formed therebetween. A plurality of memory cells are also included in the memory cell block and have lower electrodes connected to the first impurity-diffused regions, ferroelectric films formed on the lower electrodes and first upper electrodes formed on the ferroelectric films and connected to the second impurity-diffused regions. Further included are block selecting transistors formed on the semiconductor substrate and being connected to one end of the memory cell block. Second upper electrodes are also formed adjoined to the block selecting transistors and being disconnected from the first upper electrode of the memory cells.
摘要:
A transistor including a source/drain region is formed on a semiconductor substrate. A plug electrode is formed on the source/drain region. A conductive film is formed on the plug electrode. A first insulation film is formed on the conductive film. A lower electrode is formed on the first insulation film, and electrically connected to the conductive film formed on the plug electrode. A ferroelectric film is formed on the lower electrode. An upper electrode is formed on the ferroelectric film.
摘要:
According to an aspect of the present invention, there is provided a semiconductor memory device including a ferroelectric capacitor, including a semiconductor substrate, a transistor having diffusion layers being a source and a drain, the transistor being formed on a surface of the semiconductor substrate, a ferroelectric capacitor being formed over the transistor, the ferroelectric capacitor including a lower electrode, a ferroelectric film and an upper electrode stacked in order, an interlayer insulator separating between the transistor and the ferroelectric capacitor, a first contact plug being embedded in the interlayer insulator formed beneath the ferroelectric capacitor, the first contact plug directly connecting between one of the diffusion layers and the lower electrode, a first hydrogen barrier film covering the transistor a second hydrogen barrier film, a portion of the second hydrogen barrier film being formed on the first hydrogen barrier film, another portion of the second hydrogen barrier film covering at least the ferroelectric capacitor, and a second contact plug being embedded in the interlayer insulator, the second hydrogen barrier film and the first hydrogen barrier film, one end of the second contact plug connecting to the other of the diffusion layers.
摘要:
A semiconductor device comprising a semiconductor substrate and memory cells. Each memory cell comprises a switching transistor and a ferroelectric capacitor, both formed on the substrate. The ferroelectric capacitor includes a lower electrode, an upper electrode and a ferroelectric film held between the lower and upper electrodes. A first wire formed from a deposited wire-material film is connected to the upper electrode of the ferroelectric capacitor. A second wire formed by damascene process is provided on the first wire.
摘要:
According to a method for manufacturing a semiconductor memory device of the present invention, a capacitor lower electrode film is left on the wiring layer located above a dummy transistor. In this manner, when processing of the capacitors is performed by removing a capacitor upper electrode film and a ferroelectric film, removal of the wiring layer can be prevented, and the connection between the diffusion layer of a select transistor and a bit line can be secured.
摘要:
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.
摘要:
A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.
摘要:
There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.