Method for chemical vapor deposition of semiconductor films by separate
feeding of source gases and growing of films
    21.
    发明授权
    Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films 失效
    通过单独进料源气体和生长膜的半导体膜的化学气相沉积方法

    公开(公告)号:US5728425A

    公开(公告)日:1998-03-17

    申请号:US28143

    申请日:1993-03-09

    摘要: A method and apparatus in which separate steps are used between feeding source gases and growing films in a process of chemical vapor deposition (CVD) for compound semiconductor films. In one embodiment, a CVD reactor chamber has a piston which can change the volume of the chamber to control the pressure of the source gases therein. After source gases are fed to the chamber having a substrate under the condition that no CVD takes place due to an insufficient vapor pressure, the chamber is kept closed for a few seconds, and then pressurized by the piston to start CVD. A typical result indicates that a Hg.sub.1-x Cd.sub.x Te (where x=0.2) film on a 3-inch CdTe wafer has only 1% (or .DELTA.x=0.002) inhomogeneity in composition.

    摘要翻译: 在化合物半导体膜的化学气相沉积(CVD)的过程中,在进料源气体和生长膜之间使用分开的步骤的方法和装置。 在一个实施例中,CVD反应器腔室具有能够改变腔室的体积以控制其中的源气体的压力的活塞。 在源气体由于蒸汽压不足而在不发生CVD的条件下将源气体供给到具有基板的腔室之后,将腔室保持关闭几秒钟,然后由活塞加压以开始CVD。 典型的结果表明,3英寸CdTe晶片上的Hg1-xCdxTe(其中x = 0.2)膜的组成不均匀性仅为1%(或DELTA x = 0.002)。

    Infrared detector
    22.
    发明授权
    Infrared detector 失效
    红外探测器

    公开(公告)号:US4795907A

    公开(公告)日:1989-01-03

    申请号:US11536

    申请日:1987-02-06

    CPC分类号: H01L31/02164 H01L31/0232

    摘要: An infrared radiation (IR) detector includes a cold shield consisting of (a) a light shielding portion having a substrate made of an infrared transmissive material, an infrared absorbing layer formed on one surface of the substrate, a dielectric layer formed on the infrared absorbing layer and an infrared reflecting layer formed on the dielectric layer, and (b) an opening portion consisting of a substrate made of an infrared transmissive material and a dielectric layer formed on the one surface of the substrate. The substrate and the dielectric layer are connected and generally continuous between the light shielding portion and the opening portion. The IR detector also includes an infrared detector array having a detective area arranged just below the opening portion of the cold shield.

    摘要翻译: 一种红外辐射(IR)检测器,包括:(a)具有由红外透射材料制成的基板的遮光部分,形成在该基板的一个表面上的红外线吸收层,形成在红外线吸收层 层和形成在电介质层上的红外线反射层,以及(b)由形成在基板的一个表面上的由红外线透射材料制成的基板和介电层构成的开口部。 基板和电介质层在遮光部分和开口部分之间连接并且大致连续。 IR检测器还包括红外探测器阵列,其具有布置在冷屏蔽开口部分正下方的检测区域。

    Peroxide decomposition catalyst
    23.
    发明授权
    Peroxide decomposition catalyst 有权
    过氧化物分解催化剂

    公开(公告)号:US07988944B2

    公开(公告)日:2011-08-02

    申请号:US11993892

    申请日:2006-06-20

    IPC分类号: C01B13/00 G01N33/44 C07F3/12

    摘要: An object of the present invention is to provide a catalyst which decomposes a peroxide effectively and economically under a high temperature while suppressing generation of free radicals, and the present invention provides a peroxide decomposition catalyst containing a base metal atom, wherein a value A indicating a free radical generation amount represented by the (equation 1) is not more than 0.20, and a value B indicating a reaction rate represented by the (equation 2), which can be easily applied to utility such as an agent for preventing deterioration of a polymer electrolyte-type fuel cell and a water electrolysis apparatus, and an antioxidant for medicaments, agrochemicals and foods. A=(Mw(S)/Mw)−1  (equation 1) (wherein Mw is a weight average molecular weight of poly(sodium 4-styrenesulfonate) after a hydrogen peroxide decomposition test in the test at 80° C. in the presence of poly(sodium 4-styrenesulfonate), and Mw(S) is a weight average molecular weight of poly(sodium 4-styrenesulfonate) before the test) B=N(PO)/N(cat)  (equation 2) (wherein N(po) is a mole number of hydrogen peroxide decomposed per 20 minutes in a hydrogen peroxide decomposition test in the (equation 1), and N(cat) is a mole number per metal atom of a catalyst used).

    摘要翻译: 本发明的目的在于提供一种在高温下有效且经济地分解过氧化物同时抑制自由基产生的催化剂,本发明提供了含有贱金属原子的过氧化物分解催化剂,其中A表示 由(式1)表示的自由基产生量不大于0.20,表示由(式2)表示的反应速度的值B,其可以容易地应用于防止聚合物劣化的试剂 电解质型燃料电池和水电解装置,以及用于药物,农药和食品的抗氧化剂。 A =(Mw(S)/ Mw)-1(式1)(式中,Mw是在80℃下在过氧化氢分解试验中聚(4-苯乙烯磺酸钠)的重均分子量, 的聚(4-苯乙烯磺酸钠),Mw(S)是试验前的聚(4-苯乙烯磺酸钠)的重均分子量)B = N(PO)/ N(cat)(式2)(式中,N (po)是在(式1)的过氧化氢分解试验中每20分钟分解的过氧化氢的摩尔数,N(cat)是使用的催化剂的每个金属原子的摩尔数)。

    Dielectric strength test method of superconducting cable
    24.
    发明授权
    Dielectric strength test method of superconducting cable 失效
    超导电缆绝缘强度试验方法

    公开(公告)号:US07701225B2

    公开(公告)日:2010-04-20

    申请号:US11664608

    申请日:2005-10-12

    IPC分类号: G01R31/02 G01R27/08 C04B35/45

    CPC分类号: G01R31/1254

    摘要: A dielectric strength test method of a superconducting cable that can evaluate the insulation characteristic of a superconducting cable in a state in which a refrigerant is filled without filling a refrigerant is provided.A tested superconducting cable is filled with gas in place of a refrigerant and a regular dielectric strength test is conducted at room temperature. Preferably, a preliminary dielectric strength test is conducted prior to the regular dielectric strength test. In the preliminary dielectric strength test, a first reference superconducting cable filled with a refrigerant at a predetermined pressure and a second reference superconducting cable filled with gas in place of a refrigerant at a predetermined pressure are provided. The preliminary dielectric strength test is conducted for the first reference superconducting cable at refrigerant temperature and the second reference superconducting cable at room temperature to find the correlation between the dielectric strength characteristics of the cables. At the time, the test voltage is determined based on the dielectric strength characteristic of the second reference superconducting cable. The regular dielectric strength test is conducted at the test voltage.

    摘要翻译: 提供了一种超导电缆的介电强度测试方法,其可以在不填充制冷剂的情况下填充制冷剂的状态下评估超导电缆的绝缘特性。 测试的超导电缆填充有气体代替制冷剂,并在室温下进行规则的介电强度试验。 优选地,在常规介电强度试验之前进行预介电强度试验。 在初步绝缘强度试验中,提供了填充有预定压力的制冷剂的第一参考超导电缆和填充有气体的第二参考超导电缆代替预定压力的制冷剂。 对于制冷剂温度下的第一参考超导电缆和室温下的第二参考超导电缆进行初步介电强度测试,以找出电缆的介电强度特性之间的相关性。 此时,基于第二参考超导电缆的介电强度特性确定测试电压。 在试验电压下进行常规绝缘强度试验。

    Cooling device for semiconductor component
    25.
    发明申请
    Cooling device for semiconductor component 审中-公开
    半导体元件冷却装置

    公开(公告)号:US20050141574A1

    公开(公告)日:2005-06-30

    申请号:US10933436

    申请日:2004-09-03

    摘要: A cooling device for a semiconductor component which increases mechanical strength thereof and reduces a pressure loss of coolant. Plate members constituting the cooling device are formed with flow passages such as coolant supply and discharge openings, grooves divided by ridges, and through portions separated by projections or partitions. The ridges, projections, and partitions are joined to a adjacent plate member to increase the joining strength, which is further increased by forming the ridges, projections, and partitions of different plate members at the same positions. In the case of laminating the plate members having surfaces formed with solder layers, a number of minute vacant spaces are formed in those joining faces of the plate members which are not formed with passages, etc., and solder filets are formed over the entire joining faces to increase the joining strength. The grooves and through portions can be formed by chemical etching together with outer shapes of the plate members. A plurality of plate members can be fabricated from a single sheet material at a time.

    摘要翻译: 一种用于半导体部件的冷却装置,其增加其机械强度并降低冷却剂的压力损失。 构成冷却装置的板状构件形成有诸如冷却剂供应和排出开口的流动通道,由脊部分开的凹槽以及通过突出部或隔板分隔开的部分。 脊,突起和隔板连接到相邻的板构件以增加接合强度,这通过在相同位置形成不同板构件的脊,突起和隔板而进一步增加。 在层叠具有形成有焊料层的表面的板构件的情况下,在不形成有通路等的板构件的接合面中形成多个微小的空隙,并且在整个接合处形成焊料片 面对增加接合强度。 凹槽和贯通部分可以通过化学蚀刻与板构件的外形形成。 一次可以由单张片材制造多个板构件。

    Solid DC cable
    27.
    发明授权
    Solid DC cable 失效
    固体直流电缆

    公开(公告)号:US06201191B1

    公开(公告)日:2001-03-13

    申请号:US09069101

    申请日:1998-04-29

    IPC分类号: H01B700

    CPC分类号: H01B9/0688

    摘要: A solid DC cable is made of a conductor having multilayered insulating layer around the outer circumference of the conductor. The insulating layer has a layering configuration selected from one of the following arrangements: (i) a main insulating layer and a low resistance tape layer, where the low-resistance tape layer contains carbon paper that has a volume resistivity which is smaller than that of the main insulating layer; (ii) a main insulating layer containing kraft paper, and a low-resistance insulating layer containing a low resistance kraft paper having a resistivity smaller than the kraft paper of the main insulating layer; (iii) a main insulating layer containing a composite tape, where the tape is contains a laminate of a low-loss plastic film and kraft paper, and a low-resistance insulating layer containing kraft paper having a resistivity lower than the main insulating layer; or (iv) a low-resistance tape layer containing carbon paper described in (i), a low-resistance insulating layer containing the low-resistance kraft paper described in (ii) and a main insulating layer. The low-resistance insulating layer or the low-resistance tape layer is positioned above the conductor in a region where the pressure of the insulating oil becomes negative when a voltage load is cut off.

    摘要翻译: 固体DC电缆由导体的外周围形成有多层绝缘层的导体制成。 绝缘层具有从以下配置之一中选择的层叠结构:(i)主绝缘层和低电阻带层,其中低电阻带层含有碳纸,其具有小于 主绝缘层; (ii)含有牛皮纸的主绝缘层和含有电阻率小于主绝缘层的牛皮纸的低电阻牛皮纸的低电阻绝缘层; (iii)包含复合带的主绝缘层,其中所述带包含低损耗塑料膜和牛皮纸的层压体,以及包含电阻率低于所述主绝缘层的牛皮纸的低电阻绝缘层; 或(iv)包含(i)中所述的含碳纸的低电阻带层,包含(ii)中描述的低电阻牛皮纸的低电阻绝缘层和主绝缘层。 当电压负载被切断时,低电阻绝缘层或低电阻带层位于导体上方的绝缘油的压力变为负的区域中。