摘要:
A method and apparatus in which separate steps are used between feeding source gases and growing films in a process of chemical vapor deposition (CVD) for compound semiconductor films. In one embodiment, a CVD reactor chamber has a piston which can change the volume of the chamber to control the pressure of the source gases therein. After source gases are fed to the chamber having a substrate under the condition that no CVD takes place due to an insufficient vapor pressure, the chamber is kept closed for a few seconds, and then pressurized by the piston to start CVD. A typical result indicates that a Hg.sub.1-x Cd.sub.x Te (where x=0.2) film on a 3-inch CdTe wafer has only 1% (or .DELTA.x=0.002) inhomogeneity in composition.
摘要翻译:在化合物半导体膜的化学气相沉积(CVD)的过程中,在进料源气体和生长膜之间使用分开的步骤的方法和装置。 在一个实施例中,CVD反应器腔室具有能够改变腔室的体积以控制其中的源气体的压力的活塞。 在源气体由于蒸汽压不足而在不发生CVD的条件下将源气体供给到具有基板的腔室之后,将腔室保持关闭几秒钟,然后由活塞加压以开始CVD。 典型的结果表明,3英寸CdTe晶片上的Hg1-xCdxTe(其中x = 0.2)膜的组成不均匀性仅为1%(或DELTA x = 0.002)。
摘要:
An infrared radiation (IR) detector includes a cold shield consisting of (a) a light shielding portion having a substrate made of an infrared transmissive material, an infrared absorbing layer formed on one surface of the substrate, a dielectric layer formed on the infrared absorbing layer and an infrared reflecting layer formed on the dielectric layer, and (b) an opening portion consisting of a substrate made of an infrared transmissive material and a dielectric layer formed on the one surface of the substrate. The substrate and the dielectric layer are connected and generally continuous between the light shielding portion and the opening portion. The IR detector also includes an infrared detector array having a detective area arranged just below the opening portion of the cold shield.
摘要:
An object of the present invention is to provide a catalyst which decomposes a peroxide effectively and economically under a high temperature while suppressing generation of free radicals, and the present invention provides a peroxide decomposition catalyst containing a base metal atom, wherein a value A indicating a free radical generation amount represented by the (equation 1) is not more than 0.20, and a value B indicating a reaction rate represented by the (equation 2), which can be easily applied to utility such as an agent for preventing deterioration of a polymer electrolyte-type fuel cell and a water electrolysis apparatus, and an antioxidant for medicaments, agrochemicals and foods. A=(Mw(S)/Mw)−1 (equation 1) (wherein Mw is a weight average molecular weight of poly(sodium 4-styrenesulfonate) after a hydrogen peroxide decomposition test in the test at 80° C. in the presence of poly(sodium 4-styrenesulfonate), and Mw(S) is a weight average molecular weight of poly(sodium 4-styrenesulfonate) before the test) B=N(PO)/N(cat) (equation 2) (wherein N(po) is a mole number of hydrogen peroxide decomposed per 20 minutes in a hydrogen peroxide decomposition test in the (equation 1), and N(cat) is a mole number per metal atom of a catalyst used).
摘要:
A dielectric strength test method of a superconducting cable that can evaluate the insulation characteristic of a superconducting cable in a state in which a refrigerant is filled without filling a refrigerant is provided.A tested superconducting cable is filled with gas in place of a refrigerant and a regular dielectric strength test is conducted at room temperature. Preferably, a preliminary dielectric strength test is conducted prior to the regular dielectric strength test. In the preliminary dielectric strength test, a first reference superconducting cable filled with a refrigerant at a predetermined pressure and a second reference superconducting cable filled with gas in place of a refrigerant at a predetermined pressure are provided. The preliminary dielectric strength test is conducted for the first reference superconducting cable at refrigerant temperature and the second reference superconducting cable at room temperature to find the correlation between the dielectric strength characteristics of the cables. At the time, the test voltage is determined based on the dielectric strength characteristic of the second reference superconducting cable. The regular dielectric strength test is conducted at the test voltage.
摘要:
A cooling device for a semiconductor component which increases mechanical strength thereof and reduces a pressure loss of coolant. Plate members constituting the cooling device are formed with flow passages such as coolant supply and discharge openings, grooves divided by ridges, and through portions separated by projections or partitions. The ridges, projections, and partitions are joined to a adjacent plate member to increase the joining strength, which is further increased by forming the ridges, projections, and partitions of different plate members at the same positions. In the case of laminating the plate members having surfaces formed with solder layers, a number of minute vacant spaces are formed in those joining faces of the plate members which are not formed with passages, etc., and solder filets are formed over the entire joining faces to increase the joining strength. The grooves and through portions can be formed by chemical etching together with outer shapes of the plate members. A plurality of plate members can be fabricated from a single sheet material at a time.
摘要:
A cooling device of a laser diode array includes a stacking of a plurality of metal plate members formed with a branched groove pattern or apertures acting as a cooling water path, by a chemical etching process.
摘要:
A solid DC cable is made of a conductor having multilayered insulating layer around the outer circumference of the conductor. The insulating layer has a layering configuration selected from one of the following arrangements: (i) a main insulating layer and a low resistance tape layer, where the low-resistance tape layer contains carbon paper that has a volume resistivity which is smaller than that of the main insulating layer; (ii) a main insulating layer containing kraft paper, and a low-resistance insulating layer containing a low resistance kraft paper having a resistivity smaller than the kraft paper of the main insulating layer; (iii) a main insulating layer containing a composite tape, where the tape is contains a laminate of a low-loss plastic film and kraft paper, and a low-resistance insulating layer containing kraft paper having a resistivity lower than the main insulating layer; or (iv) a low-resistance tape layer containing carbon paper described in (i), a low-resistance insulating layer containing the low-resistance kraft paper described in (ii) and a main insulating layer. The low-resistance insulating layer or the low-resistance tape layer is positioned above the conductor in a region where the pressure of the insulating oil becomes negative when a voltage load is cut off.
摘要:
A cooling device of a laser diode array includes a stacking of a plurality of metal plate members formed with a branched groove pattern or apertures acting as a cooling water path, by a chemical etching process.
摘要:
A nitrogen containing powder metallurgical tool steel comprising at least 0.40% N, 1.6 - 15% V, C in an amount satisfying the relationship of0.2 + 0.2 V(%).ltoreq.(C + N)