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    Magnetoresistance effect head
    24.
    发明授权
    Magnetoresistance effect head 失效
    磁阻效应头

    公开(公告)号：US5585199A

    公开(公告)日：1996-12-17

    申请号：US303014

    申请日：1994-09-08

    申请人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi

    IPC分类号： G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  H01F1/00 ,  G11B21/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3281 ,  G11B2005/3996 ,  G11B5/012 ,  H01F10/3295 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12535

    摘要： A magnetoresistance effect head is disclosed which is provided with a spin valve film of the three-layer laminate construction comprising a pair of magnetic layers made of a Co-based alloy and a nonmagnetic intermediate layer interposed between the pair of magnetic layers. This magnetoresistance effect head satisfies the expressions, 3.ltoreq.d.sub.1 .ltoreq.7, 3.ltoreq.d.sub.2 .ltoreq.7, and 0.ltoreq. (d.sub.1 -d.sub.2)/d.sub.1 .ltoreq.0.40, wherein d.sub.1 and d.sub.2 stand for the thicknesses (nm) of the pair of magnetic layers (providing d.sub.1 .gtoreq.d.sub.2). A soft magnetic layer of high resistance is disposed contiguously to that of the pair of magnetic layers which has the direction of magnetization thereof varied by an external magnetic layer. The total thickness of this soft magnetic layer and the magnetic layer contiguous thereto is in the range of from 5 to 40 nm. In the case of a magnetoresistance effect head which is provided with a spin valve film of the five-layer laminate construction, the thicknesses (nm), d.sub.1 and d.sub.2, of the two outer magnetic layers similarly satisfy the conditions mentioned above. Further, the thickness (nm), d.sub.3, of the center magnetic layer satisfies the expression, 1.ltoreq.d.sub.3 .ltoreq.2/3d.sub.1. As a result, the magnetoresistance effect head acquires the ability to produce a large rate of change of magnetic resistance with high repeatability.

    摘要翻译： 公开了一种磁阻效应头，其具有三层层压结构的自旋阀膜，该三层层压结构包括一对由Co基合金制成的磁性层和介于该一对磁性层之间的非磁性中间层。 该磁电阻效应头满足表达式，其中d1和d2表示为3 / = d2）。 高电阻的软磁性层与具有由外部磁性层变化的磁化方向的一对磁性层的磁性层相邻设置。 该软磁性层和与其相邻的磁性层的总厚度为5〜40nm的范围。 在具有五层层叠结构的自旋阀膜的磁阻效应头的情况下，两个外磁层的厚度（nm），d1和d2类似地满足上述条件。 此外，中心磁性层的厚度（nm），d3满足表达式1，d3，其中E 2， 结果，磁阻效应头获得以高重复性产生大的磁阻变化率的能力。

    Magnetoresistance effect element with improved antiferromagnetic layer
    30.
    发明授权
    Magnetoresistance effect element with improved antiferromagnetic layer 失效
    具有改进反铁磁层的磁阻效应元件

    公开(公告)号：US5552949A

    公开(公告)日：1996-09-03

    申请号：US204676

    申请日：1994-03-02

    申请人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Atsuhito Sawabe ,  Masashi Sahashi

    发明人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Atsuhito Sawabe ,  Masashi Sahashi

    IPC分类号： G11B5/39 ,  H01L43/08

    CPC分类号： G11B5/399 ,  H01L43/08

    摘要： An exchange coupled film is presented, which has an antiferromagnetic film being made of N.sub.100-z Mn.sub.z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24.ltoreq.z.ltoreq.75) and having a tetragonal crystalline structure or being made of Cr.sub.100-x M.sub.x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0

    摘要翻译： 提出了一种交换耦合膜，其具有由N100-zMnz（其中N是选自由Cu，Ru，Rh，Re，Pd，Pt，Ag，Au，Os和...组成的组中的至少一种）的反铁磁膜 Ir;和24 75），并且具有四方晶系结构或由Cr100-xMx（其中M是选自元素周期表第3b族元素中的至少一种，Cu，Ru ，Rh，Re，Pt，Pd，Ag，Au，Os，Ir，Mn，Fe，Co和V; x在0