公开(公告)号：US09558980B2

公开(公告)日：2017-01-31

申请号：US12725508

申请日：2010-03-17

Applicant: William D. Lee ,  Ashwin M. Purohit ,  Marvin R. LaFontaine

Inventor： William D. Lee ,  Ashwin M. Purohit ,  Marvin R. LaFontaine

IPC: H01L21/687 ,  H01L21/683 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67

CPC classification number: H01L21/6831 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20214 ,  H01J2237/2065 ,  H01J2237/31701 ,  H01L21/67109

Abstract: Aspects of the present invention relate to ion implantation systems that make use of a vapor compression cooling system. In one embodiment, a thermal controller in the vapor compression system sends refrigeration fluid though a compressor and a condenser according to an ideal vapor compression cycle to help limit or prevent undesired heating of a workpiece during implantation, or to actively cool the workpiece.

Abstract translation: 本发明的方面涉及利用蒸气压缩冷却系统的离子注入系统。 在一个实施例中，蒸汽压缩系统中的热控制器根据理想的蒸汽压缩循环通过压缩机和冷凝器发送制冷流体，以帮助限制或防止在植入期间不期望的加热工件，或者主动冷却工件。

公开(公告)号：US20150179393A1

公开(公告)日：2015-06-25

申请号：US14135754

申请日：2013-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/082 ,  H01J2237/31705

Abstract: An ion source chamber for ion implantation system includes a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize gas molecules injected into an interior of the housing; a liner section defining one or more interior walls of the housing interior, wherein each liner section includes a interiorly facing surface exposed to the ionization region during operation the ion implantation system; a cathode shield disposed about the cathode; a repeller spaced apart from the cathode; a plate including a source aperture for discharging ions from the ion source chamber; wherein at least one of the repeller, the liner section, the cathode shield; the plate, or an insert in the plate defining the source aperture comprise silicon carbide, wherein the silicon carbide is a non-stoichiometric sintered material having excess carbon.

Abstract translation: 用于离子注入系统的离子源室包括壳体，该壳体至少部分地界定电离区域，高能电子通过该电离区域从阴极移动到电离注入壳体内部的气体分子; 限定所述壳体内部的一个或多个内壁的衬里部分，其中每个衬里部分包括在所述离子注入系统的操作期间暴露于所述电离区域的面向内的表面; 围绕阴极设置的阴极屏蔽; 与阴极间隔开的推斥器; 包括用于从离子源室排出离子的源孔的板; 其中所述推斥板，所述衬套部分，所述阴极罩中的至少一个; 该板或限定源孔的板中的插入物包括碳化硅，其中碳化硅是具有过量碳的非化学计量烧结材料。

公开(公告)号：US08941968B2

公开(公告)日：2015-01-27

申请号：US13152735

申请日：2011-06-03

Applicant: Perry J. I. Justesen ,  Allan D. Weed ,  William Davis Lee ,  Ashwin M. Purohit ,  Robert D. Rathmell ,  Gary M. Cook

Inventor： Perry J. I. Justesen ,  Allan D. Weed ,  William Davis Lee ,  Ashwin M. Purohit ,  Robert D. Rathmell ,  Gary M. Cook

IPC: H01L21/687 ,  H01L21/683

CPC classification number: H01L21/68728 ,  H01L21/6831

Abstract: An electrostatic clamp is provided, having a clamping plate, wherein a clamping surface of the clamping plate is configured to contact the workpiece. A voltage applied to one or more electrodes selectively electrostatically attracts the workpiece to the clamping surface. One or more auxiliary clamping members are further provided wherein the one or more auxiliary clamping members are configured to selectively secure at least a portion of the workpiece to the clamping surface. A temperature monitoring device configured to determine a temperature of the workpiece is provided, and a controller is configured to selectively clamp the workpiece to the clamping surface via a control of the voltage to the one or more electrodes and the one or more auxiliary clamping members, based, at least in part, on the temperature of the workpiece.

Abstract translation: 提供了一种具有夹板的静电夹具，其中夹持板的夹紧表面构造成接触工件。 施加到一个或多个电极的电压选择性地静电将工件吸引到夹紧表面。 还提供了一个或多个辅助夹紧构件，其中一个或多个辅助夹紧构件构造成选择性地将至少一部分工件固定到夹紧表面。 提供了一种被配置为确定工件的温度的温度监视装置，并且控制器被配置为经由对一个或多个电极和一个或多个辅助夹紧构件的电压的控制来选择性地将工件夹紧到夹紧表面， 至少部分地基于工件的温度。

公开(公告)号：US20130320208A1

公开(公告)日：2013-12-05

申请号：US13485186

申请日：2012-05-31

Applicant: William D. Lee ,  Steve Drummond

Inventor： William D. Lee ,  Steve Drummond

IPC: F24F3/14 ,  H01J49/04 ,  F25B29/00 ,  G21K5/02

CPC classification number: H01J37/185 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/31701

Abstract: An ion implantation system provides ions to a workpiece positioned in a process environment of a process chamber on a sub-ambient temperature chuck. An intermediate chamber having an intermediate environment is in fluid communication with an external environment and has a cooling station and heating station for cooling and heating the workpiece. A load lock chamber is provided between the process chamber and intermediate chamber to isolate the process environment from the intermediate environment. A positive pressure source provides a dry gas within the intermediate chamber at dew point that is less than a dew point of the external environment to the intermediate chamber. The positive pressure source isolates the intermediate environment from the external environment via a flow of the dry gas from the intermediate chamber to the external environment.

Abstract translation: 离子注入系统向位于次环境温度卡盘上的处理室的处理环境中的工件提供离子。 具有中间环境的中间室与外部环境流体连通，具有用于冷却和加热工件的冷却站和加热站。 在处理室和中间室之间设置负载锁定室，以将过程环境与中间环境隔离。 正压源在中间室内的露点处提供干燥气体，其露点小于外部环境对中间室的露点。 正压源通过干气从中间室流向外部环境，将中间环境与外部环境隔离开来。

公开(公告)号：US08500382B2

公开(公告)日：2013-08-06

申请号：US11752118

申请日：2007-05-22

Applicant: James S. Castantini ,  Tent-Chao D. Tao ,  Erin M. Madden ,  Donald N. Polner

Inventor： James S. Castantini ,  Tent-Chao D. Tao ,  Erin M. Madden ,  Donald N. Polner

IPC: H01L21/677

CPC classification number: F24F3/1607 ,  H01L21/67017 ,  H01L21/67213

Abstract: An airflow management system and/or method used in particle abatement in semiconductor manufacturing equipment. In particular, the apparatus disclosed is capable of creating and managing a carefully controlled particle free environment for the handling of semiconductor wafers or similar articles. The apparatus is particularly suited to be used as an interface between an equipment front end module (EFEM) and a vacuum loadlock chamber or other such article of process equipment. The apparatus also enables relative motion between enclosures while maintaining a particle free environment utilizing a moving air diffuser mounted to an interface panel.

Abstract translation: 用于半导体制造设备中的颗粒减少的气流管理系统和/或方法。 特别地，所公开的装置能够创建和管理用于处理半导体晶片或类似物品的精心控制的无颗粒环境。 该装置特别适合用作设备前端模块（EFEM）和真空负载锁定室或其它此类工艺设备之间的界面。 该装置还使得能够在安装到接口面板的移动空气扩散器的同时保持无颗粒环境的情况下在机壳之间进行相对运动。

公开(公告)号：US08330129B1

公开(公告)日：2012-12-11

申请号：US13216812

申请日：2011-08-24

Applicant: William D. Lee

Inventor： William D. Lee

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24542

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece. The ion implanter also includes an array of absorption and radiation elements arranged to absorb energy of the scanned ion beam and radiate at least some of the absorbed energy away from the propagation direction. A detection element (e.g., an infrared detector) is arranged to detect energy (e.g., in the form of heat) radiated by the array of absorption and radiation elements and to determine a beam profile of the scanned ion beam based on the detected energy.

Abstract translation: 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源，以及扫描器以横过工件的表面扫描离子束。 离子注入机还包括吸收和辐射元件的阵列，其布置成吸收扫描的离子束的能量并且辐射至少一些被吸收的能量远离传播方向。 检测元件（例如，红外检测器）被布置成检测由吸收和辐射元件阵列辐射的能量（例如，以热的形式），并且基于检测到的能量来确定扫描离子束的光束分布。

公开(公告)号：US20120248324A1

公开(公告)日：2012-10-04

申请号：US13077329

申请日：2011-03-31

Applicant: Edward C. Eisner

Inventor： Edward C. Eisner

IPC: H01J1/50 ,  G21K5/10 ,  H01J3/14

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US08270142B2

公开(公告)日：2012-09-18

申请号：US12331619

申请日：2008-12-10

Applicant: William D. Lee ,  Ashwin M. Purohit ,  Marvin R. LaFontaine ,  Richard J. Rzeszut

Inventor： William D. Lee ,  Ashwin M. Purohit ,  Marvin R. LaFontaine ,  Richard J. Rzeszut

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01L21/6831

Abstract: One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.

Abstract translation: 本发明的一个实施例涉及一种用于通过钳位电压电粘合到静电卡盘表面上的半导体晶片的方法。 在这种方法中，钳位电压被去激活。 在停用之后的一段时间，晶片的第一区域从静电卡盘的表面提升第一距离，而晶片的第二区域保持粘附到静电卡盘的表面。 在此期间监视预定条件。 当满足预定条件时，第二区域从静电卡盘的表面提升。

公开(公告)号：US08242469B2

公开(公告)日：2012-08-14

申请号：US12835138

申请日：2010-07-13

Applicant: Neil K. Colvin

Inventor： Neil K. Colvin

IPC: H01J37/317 ,  H01J37/02

CPC classification number: H01J37/3171 ,  H01J3/40 ,  H01J37/026 ,  H01J37/09 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/31705

Abstract: An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable.

Abstract translation: 提供了用于减少离子注入系统中的颗粒污染的装置。 该装置具有外壳，其具有入口，出口和至少一个百叶窗，其中限定有多个百叶窗。 离子注入系统的束线通过入口和出口，其中至少一个百叶窗侧的多个百叶窗被配置为机械地过滤沿着束线行进的离子束的边缘。 外壳可以具有两个百叶窗和百叶窗顶部，其中当垂直于束线测量时，外壳的入口和出口的相应宽度通常由两个百叶窗相对于彼此的位置来限定。 一个或多个百叶窗侧面可以可调节地安装，其中外壳的入口和出口中的一个或多个的宽度是可控的。

公开(公告)号：US08226142B2

公开(公告)日：2012-07-24

申请号：US12178014

申请日：2008-07-23

Applicant: Joseph D. Gillespie ,  Sor Kham ,  Robert E. Wayne

Inventor： Joseph D. Gillespie ,  Sor Kham ,  Robert E. Wayne

IPC: B66F19/00

CPC classification number: H01L21/68707 ,  H01L21/67259 ,  Y10S294/907 ,  Y10S414/136 ,  Y10S414/141

Abstract: A workpiece gripping integrity device and method are provided having a charge-transfer sensing device configured to detect a change in charge associated with a gripper arm assembly based on a grip condition thereof. The charge-transfer sensing device can be configured to detect a change in capacitance between the gripper arm assembly and ground, wherein the change in capacitance is based on a grip condition of the gripper arm assembly associated with a plurality of grippers contacting the workpiece.

Abstract translation: 提供了一种工件夹持完整性装置和方法，其具有电荷传递感测装置，其被配置为基于其夹持条件来检测与夹持臂组件相关联的电荷变化。 电荷转移感测装置可以被配置为检测夹持器臂组件和地面之间的电容变化，其中电容的变化是基于与多个接触工件的夹具相关联的夹持臂组件的抓握状态。