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    METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS
    24.
    发明申请
    METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS 有权

    公开(公告)号：US20220155064A1

    公开(公告)日：2022-05-19

    申请号：US17438845

    申请日：2020-03-12

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. POIS ,  Laxmi WARAD ,  Srinivasan RANGARAJAN

    IPC: G01B15/02 ,  G01N23/2273

    Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies
    26.
    发明授权
    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies 有权

    公开(公告)号：US10648802B2

    公开(公告)日：2020-05-12

    申请号：US16536132

    申请日：2019-08-08

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

    IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/22

    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

    Method and system for non-destructive metrology of thin layers
    27.
    发明授权
    Method and system for non-destructive metrology of thin layers 有权

    公开(公告)号：US10533961B2

    公开(公告)日：2020-01-14

    申请号：US15773145

    申请日：2016-11-02

    Applicant: Nova Measuring Instruments, Inc.

    Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

    IPC: G01N23/227 ,  G01N23/223 ,  G01N23/22 ,  G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208

    Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

    Characterizing and measuring in small boxes using XPS with multiple measurements
    29.
    发明授权
    Characterizing and measuring in small boxes using XPS with multiple measurements 有权

    公开(公告)号：US12281893B2

    公开(公告)日：2025-04-22

    申请号：US18668048

    申请日：2024-05-17

    Applicant: NOVA MEASURING INSTRUMENTS INC.

    Inventor： Heath Pois ,  Wei Ti Lee ,  Laxmi Warad ,  Dmitry Kislitsyn ,  Parker Lund ,  Benny Tseng ,  James Chen ,  Saurabh Singh

    IPC: G01B15/02 ,  G01N23/2273 ,  H01L21/66

    Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

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