Abstract:
Disclosed herein is an apparatus and method for growing a synthetic diamond. The apparatus for growing a synthetic diamond comprises: a reaction area contained with a high pressure, high temperature apparatus; and a means for pulling a vacuum on the reaction area. The method for growing a synthetic diamond includes the steps of using a reaction area contained within a high pressure, high temperature apparatus; and pulling a vacuum on the reaction area.
Abstract:
An improved high pressure apparatus can include a plurality of complementary die segments. The die segments can have inner surfaces which are shaped to form a die chamber upon assembly of the die segments. A pair of anvils can be oriented such that an anvil is at each end of the die chamber. To prevent the die segments from being forced apart during movement of the anvils, force members can be connected to the die segments. The force members can apply discrete forces to the die segments sufficient to retain the die segments in substantially fixed positions relative to each other during application of force by the pair of anvils. Using such a high pressure apparatus can achieve pressures as high as 10 GPa with improved useful die life and larger reaction volumes.
Abstract:
An improved method for synthesizing superabrasive particles provides high quality industrial superabrasive I-,articles with high yield and a narrow size distribution. The synthesis method includes forming a substantially homogeneous mixture of raw material and catalyst material or layers of raw material and metal catalyst. A plurality of crystalline seeds is placed in a predetermined pattern in the mixture or one of the layers to form a growth precursor. The growth precursor is maintained at a temperature and pressure at which the superabrasive crystal is thermodynamically stable for a time sufficient for a desired degree of growth. Advantageously, the patterned placement of crystalline seeds and disclosed processes allow for production of synthetic octahedral diamonds and improved growth conditions generally. As a result, the grown superabrasive particles typically have a high yield of high quality particles and a narrow distribution of particle sizes.
Abstract:
A jadeite material has a thickness in excess of about 1.0 mm and CIELAB indices of L*>42, a* +6. The grain size of the jadeite material is less than about 30 microns and is an equiaxed grain structure. The jadeite material has an optical transmission peak between 500 and 565 nm with an I/IO optical transmission ratio of over 40%. The first step in making the jadeite material is to wrap a glass block, convertible by HP/HT into jadeite and having a nominal composition of NaAlSi2O6, with a graphite or refractive metal sheet. The wrapped glass block is placed in an HP/HT apparatus, rapidly heated, and subjected therein to a pressure in excess of about 3 GPa and a temperature in excess of about 1000° C. for a time adequate to convert the glass block into jadeite. The jadeite material then is cooled and the pressure subsequently released.
Abstract:
The present invention provides a superabrasive tools and methods for making the same. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy that contains Cr, Mn, Si, or Al or mixtures thereof.
Abstract:
A jadeite material has a thickness in excess of about 1.0 mm and CIELAB indices of L*>42, a* null6. The grain size of the jadeite material is less than about 30 microns and is an equiaxed grain structure. The jadeite material has an optical transmission peak between 500 and 565 nm with an I/IO optical transmission ratio of over 40%. The first step in making the jadeite material is to wrap a glass block, convertible by HP/HT into jadeite and having a nominal composition of NaAlSi2O6, with a graphite or refractive metal sheet. The wrapped glass block is placed in an HP/HT apparatus, rapidly heated, and subjected therein to a pressure in excess of about 3 GPa and a temperature in excess of about 1000null C. for a time adequate to convert the glass block into jadeite. The jadeite material then is cooled and the pressure subsequently released.
Abstract:
Diamond crystals may be grown by providing a source of diamond crystals, providing a plurality of growth centers defined by diamond crystals, mixing the source and growth center diamond crystals with a solvent/catalyst in particulate form to form a reaction mass, subjecting the reaction mass to conditions of elevated temperature and pressure suitable for crystal growth, and recovering the diamond crystals. The necessary supersaturation of carbon is achieved in the solvent/catalyst, at least in part, and preferably predominantly, by a selection of the particle size difference between the source crystal and the growth centers. The mass of diamond crystals produced by this method has a high concentration of twinned diamonds.
Abstract:
A process for preparing amorphous ultrahard material based on boron nitride which has a hardness sufficient to scratch diamond uses hexagonal or turbostratic boron nitride hBN as starting material. The starting material is compressed at pressures of at least 70 Kbar and heated to temperatures of at least of 1650.degree. C. until a boron nitride melt is obtained, the boron nitride melt is quenched by shutting off the heat supply and the quenched boron nitride melt is then relieved of the pressure. In the process, the hexagonal or turbostratic boron nitride employed as a starting material is treated in the presence of crystallisation inhibitors so that the formation of crystals is completely prevented and an amorphous structure is compacted by incorporation of reaction products comprising boron suboxides.
Abstract:
A synthetic diamond or cubic boron nitride particle is characterized by containing two or more stable isotopes of an element present in a ratio which is different to the ratio in which the isotopes exist in nature. The diamond or cubic boron nitride particle thus has a fingerprint. A preferred example of the element is nitrogen.
Abstract:
Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It may be prepared by a method comprising an initial step of low pressure chemical vapor deposition employing an isotopically pure hydrocarbon in combination with hydrogen, followed by comminution of the diamond thus obtained and conversion thereof to single-crystal diamond under high pressure conditions.