-
1.发明授权Isotopically-pure carbon-12 or carbon-13 polycrystalline diamond possessing enhanced thermal conductivity 失效具有增强的导热性的同位素纯碳12或碳-13多晶金刚石
公开(公告)号：US5540904A
公开(公告)日：1996-07-30
申请号：US368732
申请日：1995-01-04
CPC分类号： C23C16/27 , B01J3/062 , C01B31/06 , C30B25/02 , C30B29/04 , B01J2203/061 , B01J2203/062 , B01J2203/0625 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/068 , B01J2203/0685
摘要： Broadly, the present invention is directed to polycrystalline diamond of improved thermal conductivity. The novel polycrystalline diamond consists essentially of at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. The inventive polycrystalline diamond is formed from at least 99.5 wt-% isotopically-pure carbon-12 or carbon-13. Single-crystal isotopically-pure carbon-12 and carbon-13 diamond are known to possess improved thermal conductivity. Polycrystalline diamond, however, possesses lower thermal conductivity patterns deleteriously impacted by, for example, impurities, isotopic effects, and grain boundary scattering. In fact, grain boundary scattering would lead the skilled artisan to believe that the thermal conductivity of polycrystalline diamond would be substantially unaffected by the isotopic nature of the diamond itself. Unexpectedly, however, isotopic effects were discovered to predominate in impacting the thermal conductivity of polycrystalline diamond consisting essentially of isotopically-pure carbon-12 or carbon-13. This is true whether the isotopically-pure polycrystalline diamond is grown directly or whether individual isotopically-pure carbon-12 or carbon 13 diamond crystals are subjected to sintering for forming a polycrystalline structure, e.g. layer or compact, thereof.
摘要翻译： 概括地说，本发明涉及具有改善导热性的多晶金刚石。 新型多晶金刚石基本上由至少99.5重量％的同位素纯碳-12或碳-13组成。 本发明的多晶金刚石由至少99.5重量％的同位素纯碳-12或碳-13形成。 已知单晶同位素纯碳-12和碳-13金刚石具有改善的导热性。 然而，多晶金刚石具有由例如杂质，同位素效应和晶界散射有害影响的较低热导率图案。 事实上，晶粒边界散射将导致技术人员相信，多晶金刚石的导热性将基本上不受金刚石本身的同位素性质的影响。 然而，意外的是，发现同位素效应在影响基本上由同位素纯碳-12或碳-13组成的多晶金刚石的热导率方面占优势。 无论同位素纯多晶金刚石是直接生长还是单独同位素纯碳12或碳13金刚石晶体进行烧结以形成多晶结构，例如， 层或紧凑。
-
公开(公告)号：US5419798A
公开(公告)日：1995-05-30
申请号：US248896
申请日：1994-05-25
IPC分类号： H01L21/3065 , C23F1/02
CPC分类号： H01L21/3065
摘要： Graphite formation on a diamond surface during laser etching is inhibited or the graphite is removed by contact with a gaseous material such as elemental hydrogen, elemental oxygen, an inert gas or a source of hydroxyl radicals. Preferably, the article being etched is cooled and maintained in an inert atmosphere during etching.
摘要翻译： 在激光蚀刻期间在金刚石表面上的石墨形成被抑制，或者通过与气态材料例如元素氢，元素氧，惰性气体或羟基自由基的接触来除去石墨。 优选地，被蚀刻的制品在蚀刻期间被冷却并保持在惰性气氛中。
-
公开(公告)号：US5349922A
公开(公告)日：1994-09-27
申请号：US99508
申请日：1993-07-30
CPC分类号： C23C16/27 , C23C16/01 , C23C16/0254 , C23C16/0272 , C23C16/271 , Y10S117/915 , Y10T117/1016
摘要： The bond strength between a diamond and the substrate onto which it is deposited by the chemical vaporization method is decreased to the point where the diamond can be removed from the substrate as a free standing monolithic sheet. The bond strength can be decreased by polishing the substrate, removing corners from the substrate, slow cooling of the substrate after deposition, an intermediate temperature delay in cooling or the application or formation of an intermediate layer between the diamond and the substrate. The free standing sheet of diamond can be used as a laser lens, metallized to form a mirror, or silver soldered to tungsten carbide to form a cutting tool.
摘要翻译： 金刚石与通过化学气化法沉积在其上的基底之间的结合强度降低到金刚石作为自立式整体片从衬底去除的程度。 通过抛光基板，从基板去除角部，沉积后的基板缓慢冷却，冷却中的中间温度延迟或金刚石和基板之间的中间层的应用或形成，可以降低粘结强度。 金刚石的独立片可以用作激光透镜，金属化以形成反射镜，或者焊接到碳化钨上的银以形成切割工具。
-
公开(公告)号：US5334280A
公开(公告)日：1994-08-02
申请号：US064465
申请日：1993-05-21
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01L21/3065
摘要： Graphite formation on a diamond surface during laser etching is inhibited or the graphite is removed by contact with a gaseous material such as elemental hydrogen, elemental oxygen, an inert gas or a source of hydroxyl radicals. Preferably, the article being etched is cooled and maintained in an inert atmosphere during etching.
摘要翻译： 在激光蚀刻期间在金刚石表面上的石墨形成被抑制，或者通过与气态材料例如元素氢，元素氧，惰性气体或羟基自由基的接触来除去石墨。 优选地，被蚀刻的制品在蚀刻期间被冷却并保持在惰性气氛中。
-
5.发明授权Metal growth accelerator shell for the chemical vaporization deposition of diamond 失效金属生长加速器外壳用于化学气相沉积金刚石
公开(公告)号：US5306348A
公开(公告)日：1994-04-26
申请号：US893969
申请日：1992-06-03
CPC分类号： C23C16/271
摘要： The rate at which diamond is deposited by chemical vapor deposition on a substrate is increased by the presence of an expediting metal such as molybdenum in the surface of a wall exposed to the chemical vapor deposition.
摘要翻译： 通过化学气相沉积在基板上沉积金刚石的速率通过在暴露于化学气相沉积的壁的表面中存在诸如钼的加速金属而增加。
-
公开(公告)号：US5273731A
公开(公告)日：1993-12-28
申请号：US859753
申请日：1992-03-30
CPC分类号： C23C16/27 , C23C16/01 , Y10S117/915
摘要： Substantially transparent polycrystalline diamond film is provided having a thickness greater than 50 microns which can be used in glazing applications and as a heat sink in microelectric applications. A mixture of hydrogen and methane is conveyed into a heat filament reaction zone which is adjacent to an appropriate substrate, such as a molybdenum substrate to produce non-adherent polycrystalline substantially transparent diamond film.
摘要翻译： 提供基本上透明的多晶金刚石膜，其厚度大于50微米，可用于玻璃应用中，并用作微电子应用中的散热器。 氢和甲烷的混合物被输送到与合适的基底（例如钼基底）相邻的热丝反应区，以产生非粘附的多晶基本上透明的金刚石膜。
-
公开(公告)号：US5110579A
公开(公告)日：1992-05-05
申请号：US407179
申请日：1989-09-14
CPC分类号： C23C16/271 , C23C16/01 , C23C16/27 , C23C16/279 , Y10S428/938
摘要： A method is provided for making substantially transparent polycrystalline diamond film having a thickness greater than 50 microns which can be used in glazing applications and as a heat sink in microelectric applications. A mixture of hydrogen and methane is conveyed into a heated filament reacting zone which is adjacent to an appropriate substrate, such as a molybdenum substrate to produce non-adherent polycrystalline substantially transparent diamond film.
-
公开(公告)号：US5096736A
公开(公告)日：1992-03-17
申请号：US563367
申请日：1990-08-07
CPC分类号： C23C16/458 , C23C16/271
摘要： The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion. The improvement for coating with CVD diamond the entire outer surface of at least a portion of a plurality of stationary elongate objects comprises disposed within said reactor, an elongate metal tube having a plurality of apertures for holding elongate objects disposed radially inwardly and having a cooling pipe in thermal contact with and disposed about the outside of said metal tube; and a filament running within said tube along its lengthwise extent and being in electrical connection with the source of voltage for heating said filament to a temperature adequate to initiate hydrocarbon disassociation, the portions of said elongate object within said tube surrounding said filament being heated thereby.
-
公开(公告)号：US5022801A
公开(公告)日：1991-06-11
申请号：US555879
申请日：1990-07-18
CPC分类号： B23B51/02 , B23B2226/31 , B23B2228/04 , B23B2228/10 , Y10T408/78 , Y10T408/81 , Y10T408/909
摘要： The present invention is directed to a twist drill which is coated with a layer of CVD diamond and which has slots in its head which are filled with CVD diamond. The invention twist drill is made by forming slots in the head of the twist drill and then subjecting the slotted twist drill to a CVD diamond deposition process for coating said twist drill with a layer of CVD diamond and for filling said slots with CVD diamond. The performance of CVD diamond-coated twist drills does not depend on retaining the diamond film over most of the areas of the drill; but, rather, drill performance is dependent upon retaining a layer of diamond on the cutting edge of the drill. The diamond-filled slots in the head of the twist drill function as wear stops and additional cutting edges as the surrounding drill material is worn away during use.
-
10.发明授权Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors 失效用于半导体单晶外延生长的多晶CVD金刚石衬底
公开(公告)号：US4981818A
公开(公告)日：1991-01-01
申请号：US479486
申请日：1990-02-13
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , H01L21/20 , H01L21/205 , H01L23/373
CPC分类号： C23C16/27 , C23C16/0272 , H01L21/02381 , H01L21/02447 , H01L21/02527 , H01L21/02546 , H01L21/0262 , H01L23/3732 , H01L2924/0002 , Y10S148/135 , Y10S438/931
摘要： The present invention is directed towards the production of a single crystal semiconductor device mounted in intimate contact with a polycrystalline CVD diamond substrate which allows the high heat conductivity of diamond to keep the device cool. This device is made by a method comprising the steps of placing in a reaction chamber, a single crystal of silicon heated to an elevated CVD diamond-forming temperature. A hydrocarbon/hydrogen gaseous mixture is provided within the chamber and is at least partially decomposed to form a polycrystalline CVD diamond layer on said silicon. During the deposition/growth phase, an intermediate layer of single crystal SiC has been found to form between the single crystal of silicon and the polycrystalline CVD diamond layer. In the next step of the process, the silicon is etched or removed to reveal the single crystal SiC supported by the polycrystalline CVD diamond layer. Finally, a semiconductor layer (e.g. silicon, SiC, GaAs, or the like) is grown on the exposed single crystal of SiC to produce a single crystal semiconductor polycrystalline CVD diamond mounted device.
-
-
-
-
-
-
-
-
-
搜索结果
31 条记录 (耗时 0.023 秒)
