公开(公告)号：US20030234075A1

公开(公告)日：2003-12-25

申请号：US10312864

申请日：2003-06-13

Inventor： Bernard Aspar ,  He Chrystelle Lagag

IPC: B32B001/00

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: A process for cutting out a block of material (10) comprising the following stages: (a) the formation in the block of a buried zone (12), embrittled by at least one stage of ion introduction, the buried zone defining at least one superficial part (14) of the block, (b) the formation at the level of the embrittled zone of at least one separation initiator (30, 36) by the use of a first means of separation chosen from amongst the insertion of a tool, the injection of a fluid, a thermal treatment and/or implantation of ions of an ionic nature different from that introduced during the preceding stage, and (c) the separation at the level of the embrittled zone of the superficial part (14) of the block from a remaining part (16), called the mass part, from the separation initiator (30, 36) by the use of a second means, different from the first means of separation and chosen from among a thermal treatment and/or the application of mechanical forces acting between the superficial part and the embrittled zone. Application for the manufacture of components for micro-electronics, opto-electronics or micro-mechanics.

Abstract translation: 一种用于切割材料块（10）的方法，包括以下阶段：（a）通过至少一个离子引入阶段脆化的埋入区（12）的块中的形成，所述掩埋区限定至少一个 块的表面部分（14），（b）通过使用从插入工具中选择的第一分离装置在至少一个分离引发剂（30,36）的脆化区的层面上形成， 流体的注入，离子性质的热处理和/或离子注入不同于在前一阶段引入的离子性离子，和（c）在所述表面部分（14）的脆化区域的水平分离 通过使用不同于第一分离装置的第二装置从选自热处理和/或应用程序的第二装置从分离引发剂（30,36）的剩余部分（16）中除去称为质量部分的块 在表面部分之间作用的机械力 脆弱的区域。 用于制造微电子，光电子或微机械元件的应用。

公开(公告)号：US20030113983A1

公开(公告)日：2003-06-19

申请号：US10268918

申请日：2002-10-09

Applicant: Silicon Genesis Corporation

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L021/30

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US06555404B1

公开(公告)日：2003-04-29

申请号：US09629679

申请日：2000-08-01

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: H01L2100

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and also between the first and second portions of the side drive electrodes to cause a bond to occur therebetween. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

Abstract translation: 制造微机电陀螺仪的方法。 悬臂梁结构，侧驱动电极的第一部分和配合结构限定在第一基板或晶片上; 并且至少一个接触结构，侧驱动电极的第二部分和配合结构限定在第二衬底或晶片上，第二衬底或晶片上的配合结构与第一衬底上的配合结构互补形状，或 并且所述侧驱动电极的第一和第二部分彼此互补形状。 在至少一个配合结构和侧驱动电极的一个或第一和第二部分中提供粘结层，优选共晶粘结层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力，使得在接合或共晶层处的两个配合结构之间以及侧驱动电极的第一和第二部分之间发生接合，从而在它们之间发生接合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。 键优选为共晶键。

公开(公告)号：US20020190319A1

公开(公告)日：2002-12-19

申请号：US10038890

申请日：2002-01-02

Inventor： Jeffrey Borenstein

IPC: H01L027/12

CPC classification number: B81C1/00119 ,  B81B2201/0235 ,  B81C1/00357 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2201/019 ,  B81C2201/0191

Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI). One first obtains an SOI wafer that has (i) a handle layer, (ii) a a dielectric layer, and (iii) a device layer. A mesa etch has been made on the device layer of the SOI wafer and a structural etch has been made on the dielectric layer of the SOI wafer. One then obtains a substrate (such as glass or silicon), where a pattern has been etched onto the substrate. The SOI wafer and the substrate are bonded together. Then the handle layer of the SOI wafer is removed, followed by the dielectric layer of the SOI wafer.

Abstract translation: 本发明提供了使用绝缘体上硅（SOI）制造微电子机械系统（MEMS）和相关器件的一般制造方法。 首先获得具有（i）手柄层，（ii）介电层和（iii）器件层）的SOI晶片。 已经在SOI晶片的器件层上进行了台面蚀刻，并且在SOI晶片的电介质层上进行了结构蚀刻。 然后，获得衬底（例如玻璃或硅），其中已将图案蚀刻到衬底上。 SOI晶片和衬底结合在一起。 然后去除SOI晶片的手柄层，随后是SOI晶片的电介质层。

公开(公告)号：US20020115264A1

公开(公告)日：2002-08-22

申请号：US09828082

申请日：2001-04-05

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: B26F003/00 ,  B26F003/02

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底 所选深度以上的材料（12）和所选深度处的图案的颗粒。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US06335264B1

公开(公告)日：2002-01-01

申请号：US09663043

申请日：2000-09-15

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21265

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.

Abstract translation: 一种从供体衬底（10）形成材料（12）的薄膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定上述施主衬底材料（12） 所选深度。 能量被提供到衬底的选定区域以从施主衬底切割材料薄膜。 将颗粒再次引入供体底物的供体底物的新鲜表面下方。 然后从供体基材上切下第二薄膜材料。

公开(公告)号：US06284631B1

公开(公告)日：2001-09-04

申请号：US09480979

申请日：2000-01-10

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L2122

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成受应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控断裂作用，因此，所述切割作用提供了扩张切割前沿以释放施主材料 从供体底物的剩余部分。

公开(公告)号：US6155909A

公开(公告)日：2000-12-05

申请号：US26115

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底 所选深度以上的材料（12）和所选深度处的图案的颗粒。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US06143583A

公开(公告)日：2000-11-07

申请号：US93492

申请日：1998-06-08

Applicant: Ken Maxwell Hays

Inventor： Ken Maxwell Hays

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/00

CPC classification number: B81C1/00595 ,  B81B2201/0242 ,  B81B2203/033 ,  B81C2201/0136 ,  B81C2201/0191 ,  B81C2203/031

Abstract: The method of the present invention provides a process for manufacturing MEMS devices having more precisely defined mechanical and/or electromechanical members. The method of the present invention begins by providing a partially sacrificial substrate and a support substrate. In order to space the mechanical and/or electromechanical members of the resulting MEMS device above the support substrate, mesas are formed on the support substrate. By forming the mesas on the support substrate instead of the partially sacrificial substrate, the mechanical and/or electromechanical members can be more precisely formed from the partially sacrificial substrate since the inner surface of the partially sacrificial substrate is not etched and therefore remains planar. As such, trenches can be precisely etched through the planar inner surface of the partially sacrificial substrate to define mechanical and/or electromechanical members of the MEMS device. The present invention also provides an improved MEMS device, such as an improved gyroscope, that includes more precisely and reliably defined mechanical and/or electromechanical members.

Abstract translation: 本发明的方法提供了一种用于制造具有更精确定义的机械和/或机电构件的MEMS装置的方法。 本发明的方法开始于提供部分牺牲衬底和支撑衬底。 为了将所得MEMS器件的机械和/或机电部件放置在支撑基板上方，台面形成在支撑基板上。 通过在支撑衬底上形成台面而不是部分牺牲衬底，可以从部分牺牲衬底更精确地形成机械和/或机电构件，因为部分牺牲衬底的内表面没有被蚀刻并因此保持平面。 因此，可以通过部分牺牲衬底的平面内表面精确地蚀刻沟槽，以限定MEMS器件的机械和/或机电部件。 本发明还提供了一种改进的MEMS器件，例如改进的陀螺仪，其包括更准确且可靠地定义的机械和/或机电元件。

公开(公告)号：US5994207A

公开(公告)日：1999-11-30

申请号：US26027

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.