公开(公告)号：US20130009090A1

公开(公告)日：2013-01-10

申请号：US13611594

申请日：2012-09-12

申请人： Chun-Han Wu ,  Tien-Huat Gan

发明人： Chun-Han Wu ,  Tien-Huat Gan

IPC分类号： C23F1/20

CPC分类号： C09K13/04 ,  C23F1/02 ,  C23F1/20 ,  H05K3/067

摘要： An aluminum etchant includes 3-30 wt % of hydrochloric acid, 4-20 wt % of sulfuric acid, 1-5 wt % of oxidizing agent, 0.5-2 wt % of surfactant, and water for the rest. The etchant can produce circuits of 200-25 μm wide on an aluminum foil or aluminum plate. The circuit has good quality. Therefore, the invention is suitable for miniaturized products that require higher precision.

摘要翻译： 铝蚀刻剂包括3-30重量％的盐酸，4-20重量％的硫酸，1-5重量％的氧化剂，0.5-2重量％的表面活性剂和其余的水。 蚀刻剂可以在铝箔或铝板上产生200-25μm宽的电路。 电路质量好。 因此，本发明适用于需要更高精度的小型化产品。

公开(公告)号：US20120292559A1

公开(公告)日：2012-11-22

申请号：US13564880

申请日：2012-08-02

申请人： Mores Basaly

发明人： Mores Basaly

IPC分类号： C09K13/00

CPC分类号： C23F1/20 ,  C11D3/042 ,  C11D3/046 ,  C11D3/2082 ,  C11D11/0029 ,  C23F1/16 ,  C23F3/03 ,  C23G1/125 ,  C25D11/16 ,  Y10T428/12993

摘要： The invention relates to compositions and methods that are useful in etching a metal surface. In particular, the invention relates to novel acid compositions and methods of using such compositions in etching a metal surface, preferably an aluminum surface prior to anodizing to dissolve impurities, imperfections, scale, and oxide. The compositions are effective in maintaining their etching capacity and in removing smut produced by the etching of a surface as well as in general cleaning.

摘要翻译： 本发明涉及用于蚀刻金属表面的组合物和方法。 特别地，本发明涉及新的酸组合物和在阳极氧化之前蚀刻金属表面，优选铝表面以溶解杂质，不完美，氧化皮和氧化物的方法。 该组合物在保持其蚀刻能力以及通过蚀刻表面而产生的杂质以及通常的清洁方面是有效的。

公开(公告)号：US08124544B2

公开(公告)日：2012-02-28

申请号：US12477303

申请日：2009-06-03

申请人： Satoru Okamoto ,  Teruyuki Fujii ,  Hideto Ohnuma ,  Akihiro Ishizuka

发明人： Satoru Okamoto ,  Teruyuki Fujii ,  Hideto Ohnuma ,  Akihiro Ishizuka

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L27/124 ,  C23F1/20 ,  C23F1/26 ,  G02F1/136227 ,  G02F2001/13629 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/76838 ,  H01L21/76885

摘要： It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive layer connected to an element and a second conductive layer thereover; forming a resist mask over the second conductive layer; processing the second conductive layer by dry etching with the use of the mask; and processing the first conductive layer by wet etching with the mask left, wherein the etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching, and wherein the etching rate of the second conductive layer is the same as or more than that of the first conductive layer in the wet etching.

摘要翻译： 本发明的目的是提供一种包括具有优选形状的布线的半导体器件。 一种制造方法包括以下步骤：形成连接到元件的第一导电层和其上的第二导电层; 在所述第二导电层上形成抗蚀剂掩模; 通过使用掩模的干法蚀刻处理第二导电层; 以及通过左蚀刻法进行湿式蚀刻来处理第一导电层，其中在干蚀刻中第二导电层的蚀刻速率高于第一导电层的蚀刻速率，并且其中第二导电层的蚀刻速率相同 与湿蚀刻中的第一导电层的相同或更多。

公开(公告)号：US20100230631A1

公开(公告)日：2010-09-16

申请号：US12438143

申请日：2008-07-16

申请人： Tsuguhiro Tago ,  Tomotake Matsuda ,  Mayumi Kimura ,  Tetsuo Aoyama

发明人： Tsuguhiro Tago ,  Tomotake Matsuda ,  Mayumi Kimura ,  Tetsuo Aoyama

IPC分类号： C09K13/06

CPC分类号： H01L21/32134 ,  C23F1/20 ,  H01L21/32139

摘要： A metal film such as an aluminum film or an aluminum alloy film is etched with good controllability, preventing a resist from bleeding, to have a proper taper configuration and superior flatness.A water solution containing a phosphoric acid, a nitric acid, and an organic acid salt is used as an etching liquid composition used to etch the metal film on a substrate.The organic acid salt is composed of one kind selected from a group consisting of an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxicarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid and an aromatic oxycarboxylic acid, and one kind selected from a group consisting of an ammonium salt, an amine salt, a quaternary ammonium salt, and an alkali metal salt.In addition, a concentration of the organic acid salt ranges from 0.1% to 20% by weight.In addition, the etching liquid composition according to the present invention is used when the metal film is formed of aluminum or an aluminum alloy.

摘要翻译： 蚀刻具有良好可控性的铝膜或铝合金膜等金属膜，防止抗蚀剂渗色，具有适当的锥形构造和优异的平坦度。 使用含有磷酸，硝酸和有机酸盐的水溶液作为用于蚀刻基板上的金属膜的蚀刻液组合物。 有机酸盐由脂肪族一元羧酸，脂肪族多元羧酸，脂肪族二羧酸，芳香族单羧酸，芳香族多元羧酸，芳香族羟基羧酸等组成的组中选出的一种， 由铵盐，胺盐，季铵盐和碱金属盐组成的组。 另外，有机酸盐的浓度为0.1〜20重量％。 此外，当金属膜由铝或铝合金形成时，使用根据本发明的蚀刻液组合物。

公开(公告)号：US20090124091A1

公开(公告)日：2009-05-14

申请号：US12352020

申请日：2009-01-12

申请人： Kazuhiro Fujikawa ,  Tsuguhiro Tago

发明人： Kazuhiro Fujikawa ,  Tsuguhiro Tago

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： C23F1/20 ,  H01L21/32134

摘要： The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudation trace. Said problems have been solved by the present invention, which is an etching solution composition for etching metal films containing one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof.

摘要翻译： 本发明的目的在于提供一种能够以可控制的方式蚀刻金属膜，形成期望的定形锥形形状的蚀刻溶液组合物，并获得光滑表面而不引起蚀刻溶液渗出痕迹。 所述问题已经通过本发明来解决，本发明是用于蚀刻含有一种或多种选自烷基硫酸盐或全氟链烯基苯基醚磺酸的表面活性剂的金属膜的蚀刻溶液组合物及其盐。

公开(公告)号：US20070037402A1

公开(公告)日：2007-02-15

申请号：US10544487

申请日：2003-11-20

申请人： Kazuyoshi Inoue

发明人： Kazuyoshi Inoue

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： G02F1/13439 ,  C23F1/20 ,  C23F1/30 ,  G02F1/133555 ,  H01L51/5218 ,  H01L2251/5315

摘要： An etchant for selective etching is used to simplify the production process of a semi-transparent semi-reflective electrode substrate, and temporal loss is not produced by avoiding troublesome repeated works, thereby efficiently providing a semi-transparent semi-reflective electrode substrate. A method for manufacturing a semi-transparent semi-reflective electrode substrate where a metal oxide layer (12) made of at least indium oxide and an inorganic compound layer (14) at least made of Al or Ag are formed in order of mention. The method comprises a step of etching the inorganic compound layer (14) with an etchant X composed of phosphoric acid, nitric acid, and acetic acid and a step of etching the metal oxide layer (12) with an etchant a containing oxalic acid.

摘要翻译： 用于选择性蚀刻的蚀刻剂用于简化半透明半反射电极基板的制造工艺，并且通过避免麻烦的重复工作不会产生时间损失，从而有效地提供半透明半反射电极基板。 制造半透明半反射电极基板的方法，其中至少由氧化铟制成的金属氧化物层（12）和至少由Al或Ag制成的无机化合物层（14）按顺序形成。 该方法包括用由磷酸，硝酸和乙酸组成的蚀刻剂X蚀刻无机化合物层（14）的步骤，以及用含有草酸的蚀刻剂a蚀刻金属氧化物层（12）的步骤。

公开(公告)号：US07138342B2

公开(公告)日：2006-11-21

申请号：US10698252

申请日：2003-10-31

申请人： Cathleen H. Chang ,  Terry C. Tomt

发明人： Cathleen H. Chang ,  Terry C. Tomt

IPC分类号： H01L21/302 ,  C09K13/00 ,  C09K13/04

CPC分类号： C11D7/36 ,  C11D7/08 ,  C11D7/263 ,  C11D11/0029 ,  C11D11/0047 ,  C23F1/20 ,  C23G1/125

摘要： Process for combined chemical cleaning and etching of parts made of aluminum and/or aluminum alloys including: (a) providing a cleaning and etching solution including 5–30 grams/liter of phosphoric acid; 5–30 grams/liter of hydrogen fluoride; 120–220 grams/liter of sulfamic acid; 55–85.0 grams/liter of glycol ether; and balance water; (b) contacting the parts with the solution for a time sufficient to achieve the desired amount of cleaning and etching; (c) periodically measuring the etching rate of the solution; (d) when the etching rate is below the required minimum rate, adding sufficient hydrogen fluoride to restore the etching rate above the required minimum rate; and (e) periodically adding sufficient sulfamic acid to prevent the formation of scale made of hydrated aluminum fluoride.

摘要翻译： 包括：（a）提供包含5-30克/升磷酸的清洗和蚀刻溶液; 5-30克/升氟化氢; 120-220克/升氨基磺酸; 55-85.0克/升乙二醇醚; 并平衡水; （b）使部件与溶液接触足以实现所需量的清洗和蚀刻的时间; （c）周期性地测量溶液的蚀刻速率; （d）当蚀刻速率低于所需的最小速率时，加入足够的氟化氢以使蚀刻速率恢复到所要求的最低速率以上; 和（e）周期性地添加足够的氨基磺酸以防止水合氟化铝形成的垢。

公开(公告)号：US07101809B2

公开(公告)日：2006-09-05

申请号：US11047680

申请日：2005-02-02

申请人： Gyoo Chul Jo

发明人： Gyoo Chul Jo

IPC分类号： H01L21/463 ,  H01L21/302 ,  G02F1/13

CPC分类号： H01L29/66765 ,  C23F1/02 ,  C23F1/20 ,  H01L21/32134

摘要： In the case that a stacked layer, in which another metal layer is stacked on an Al layer or Al alloy layer having a low resistance, is used as a wiring material, an etchant is provided which can etch to a substantially equal etching rate by executing only one etching on the each metal layer composing the stacked layer. A method of manufacturing a substrate for an electronic device uses the etchant, producing an electronic device having the substrate.In order to achieve the object, the etchant has fluoric acid, periodic acid and sulfuric acid wherein the total weight ratio of the fluoric acid and periodic acid is 0.05˜30 wt %, the weight ratio of the sulfuric acid is 0.05˜20 wt %, the weight ratio of periodic acid to fluoric acid is 0.01˜2 wt %. Also each layer of wiring (5, 12, 14) formed by stacking Al layer or Al alloy layer and Ti layer or Ti alloy layer can be uniformly etched to substantially equal etching rate by the etchant.

摘要翻译： 在将层叠有Al层或Al电阻较低的Al合金层的堆叠层用作布线材料的情况下，可以通过执行蚀刻剂，蚀刻到基本相同的蚀刻速度 在构成堆叠层的每个金属层上仅进行一次蚀刻。 制造电子器件用基板的方法使用蚀刻剂，制造具有基板的电子器件。 为了达到上述目的，蚀刻剂具有氟酸，高碘酸和硫酸，其中氟酸和高碘酸的总重量比为0.05〜30重量％，硫酸的重量比为0.05〜20重量％ ，高碘酸与氟酸的重量比为0.01〜2重量％。 也可以通过层叠Al层或Al合金层以及Ti层或Ti合金层而形成的每层布线（5,12,14）可均匀地蚀刻，从而蚀刻剂的蚀刻速率基本相等。

公开(公告)号：US07101808B2

公开(公告)日：2006-09-05

申请号：US10679683

申请日：2003-10-06

申请人： Wayne C. Tucker ,  Maria G. Medeiros ,  Richard Brown

发明人： Wayne C. Tucker ,  Maria G. Medeiros ,  Richard Brown

IPC分类号： H01L21/302 ,  C09K13/00 ,  C09K13/06

CPC分类号： C23F1/28 ,  C23C22/56 ,  C23F1/20 ,  C23F1/26

摘要： Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-containing compound in a metal surface etching solution that otherwise would contain chromium.

摘要翻译： 用于处理和/或蚀刻金属，特别是铝，铝合金，钢和钛的非铬酸盐溶液及其应用方法，其中所述溶液包括钛酸盐或二氧化钛作为铬 - 在含有铬的金属表面蚀刻溶液中含有化合物。

公开(公告)号：US07097783B2

公开(公告)日：2006-08-29

申请号：US10622304

申请日：2003-07-17

申请人： Peter Wayte

发明人： Peter Wayte

IPC分类号： C23F1/00

CPC分类号： C23F1/20 ,  F05B2260/80 ,  F05C2201/021 ,  F05C2201/0412 ,  G01N21/8803 ,  G01N21/91 ,  G01N33/20

摘要： A process for detecting an aluminum-based material deposited onto a titanium-based gas turbine engine component during engine operation is disclosed. The process comprises immersing at least a portion of the titanium-based component, which has been subjected to engine operation, into an acid solution to form an etched component. The acid solution comprises sodium fluoride, sulphuric acid and water. The etched component may then be removed from the solution and visually inspected for dark areas in contrast to light areas, the dark areas indicating deposited aluminum-based material.

摘要翻译： 公开了一种在发动机运转期间检测沉积在钛基燃气涡轮发动机部件上的铝基材料的方法。 该方法包括将经过发动机操作的至少一部分钛基组分浸入酸溶液中以形成蚀刻组分。 酸溶液包括氟化钠，硫酸和水。 然后可以从溶液中除去蚀刻的组分，并与光区域相比目视检查暗区，暗区表示沉积的铝基材料。