公开(公告)号：US11984480B2

公开(公告)日：2024-05-14

申请号：US17270230

申请日：2020-06-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Taro Enokizono ,  Tsutomu Hori ,  Taro Nishiguchi

IPC: H01L29/16 ,  C30B29/36

CPC classification number: H01L29/1608 ,  C30B29/36

Abstract: A silicon carbide epitaxial substrate includes a silicon carbide substrate, a first silicon carbide epitaxial layer, and a second silicon carbide epitaxial layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide epitaxial layer is in contact with a whole of the first main surface. The second silicon carbide epitaxial layer is in contact with a whole of the second main surface. A carrier concentration of the silicon carbide substrate is higher than a carrier concentration of each of the first silicon carbide epitaxial layer and the second silicon carbide epitaxial layer.

公开(公告)号：US20240093408A1

公开(公告)日：2024-03-21

申请号：US18266268

申请日：2021-12-13

Applicant: Zadient Technologies SAS

Inventor： Ivo Crössmann ,  Friedrich Schaaff ,  Hilmar Richard Tiefel ,  Kagan Ceran

IPC: C30B35/00 ,  C01B32/956 ,  C23C16/32 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C30B23/06 ,  C30B29/36

CPC classification number: C30B35/007 ,  C01B32/956 ,  C23C16/325 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C30B23/066 ,  C30B29/36

Abstract: The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

公开(公告)号：US11913135B2

公开(公告)日：2024-02-27

申请号：US17780702

申请日：2020-11-10

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko Okita ,  Tsubasa Honke ,  Shunsaku Ueta

IPC: C30B29/36 ,  H01L29/16 ,  H01L29/34 ,  C30B33/10 ,  C01B32/956 ,  H01L21/306

CPC classification number: C30B29/36 ,  C01B32/956 ,  C30B33/10 ,  H01L21/30625 ,  H01L29/1608 ,  H01L29/34 ,  C01P2006/80

Abstract: A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes screw dislocations and pits having a maximum diameter of 1 μm or more and 10 μm or less in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, a percentage obtained by dividing a number of the pits by a number of the screw dislocations is 1% or less. A concentration of magnesium in the first main surface is less than 1×1011 atoms/cm2.

公开(公告)号：US20240060212A1

公开(公告)日：2024-02-22

申请号：US18448165

申请日：2023-08-11

Applicant: SENIC INC.

Inventor： Jong Hwi PARK ,  Myung Ok KYUN

IPC: C30B35/00 ,  C30B29/36 ,  C30B23/02

CPC classification number: C30B35/007 ,  C30B29/36 ,  C30B23/02

Abstract: A silicon carbide powder including carbon; silicon; and an oxide film having a thickness of 0.1 nm to 10 nm is provided.

公开(公告)号：US20240035200A1

公开(公告)日：2024-02-01

申请号：US18028686

申请日：2021-09-23

Applicant: EBNER Industrieofenbau GmbH

Inventor： Robert EBNER ,  Kanaparin ARIYAWONG ,  Ghassan BARBAR ,  Chih-Yung HSIUNG

IPC: C30B35/00 ,  C30B25/18 ,  C30B29/60 ,  C30B29/36 ,  C30B33/08 ,  C30B33/02

CPC classification number: C30B35/002 ,  C30B25/183 ,  C30B29/60 ,  C30B29/36 ,  C30B33/08 ,  C30B33/02

Abstract: A device for growing single crystals, in particular of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the single crystals, wherein the device includes at least one seed crystal layer, wherein the seed crystal layer is assembled from multiple seed crystal plates in a tessellated manner.

公开(公告)号：US20240026569A1

公开(公告)日：2024-01-25

申请号：US18025029

申请日：2021-09-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hiroki NISHIHARA ,  Takaya MIYASE ,  Taro NISHIGUCHI

IPC: C30B29/36 ,  C30B25/20

CPC classification number: C30B29/36 ,  C30B25/20

Abstract: A silicon carbide epitaxial substrate includes a silicon carbide substrate, a silicon carbide epitaxial film. The silicon carbide epitaxial film is on the silicon carbide substrate. The first extended defect is in the silicon carbide epitaxial film. The first extended defect includes a particle, a triangular defect extending from the particle along an off-direction, and a basal plane dislocation originating from the particle and having a portion extending along a direction perpendicular to each of a thickness direction of the silicon carbide substrate and the off-direction. In the direction perpendicular to each of the thickness direction of the silicon carbide substrate and the off-direction, an extended width of the basal plane dislocation is twice or more a base width of the triangular defect. In a second main surface, an area density of the basal plane dislocation included in the first extended defect is 3/cm2 or less.

公开(公告)号：US11869810B2

公开(公告)日：2024-01-09

申请号：US16606540

申请日：2018-01-15

Applicant: Siltectra GmbH

Inventor： Marko Swoboda ,  Ralf Rieske ,  Christian Beyer ,  Jan Richter

IPC: H01L21/78 ,  B23K26/0622 ,  B23K26/00 ,  B28D5/00 ,  B23K26/53 ,  B23K26/40 ,  C30B33/00 ,  C30B31/20 ,  B23K103/00 ,  C30B29/36 ,  H01L29/16 ,  H01L29/78 ,  H01L29/872 ,  B23K101/40

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0624 ,  B23K26/40 ,  B23K26/53 ,  B28D5/0011 ,  C30B31/20 ,  C30B33/00 ,  B23K2101/40 ,  B23K2103/56 ,  C30B29/36 ,  H01L29/1608 ,  H01L29/7802 ,  H01L29/872

Abstract: The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

公开(公告)号：US20240003053A1

公开(公告)日：2024-01-04

申请号：US18143665

申请日：2023-05-05

Applicant: Resonac Corporation

Inventor： Yoshitaka NISHIHARA ,  Hiromasa Suo

IPC: C30B29/36 ,  C01B32/956

CPC classification number: C30B29/36 ,  H01L29/1608 ,  C01B32/956

Abstract: In a SiC substrate of the present invention, in a case where the SiC substrate is supported on an inner periphery by an inner peripheral support surface positioned to overlap a circumference having a radius of 17.5 mm from a center, in a case where a plane connecting first points of an upper surface overlapping the inner peripheral support surface when seen in a thickness direction is defined as a first reference plane, and an upper side of the first reference plane is defined as a positive side, a bow is less than 40 μm.

公开(公告)号：US11859305B2

公开(公告)日：2024-01-02

申请号：US18169883

申请日：2023-02-16

Applicant: SENIC Inc.

Inventor： Jung Woo Choi ,  Jung-Gyu Kim ,  Kap-Ryeol Ku ,  Sang Ki Ko ,  Byung Kyu Jang

IPC: C30B35/00 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36

CPC classification number: C30B23/005 ,  C30B23/02 ,  C30B29/36

Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.

公开(公告)号：US20230392293A1

公开(公告)日：2023-12-07

申请号：US18203804

申请日：2023-05-31

Applicant: Resonac Corporation

Inventor： Tomohiro SHONAI

IPC: C30B33/08 ,  C30B29/36 ,  C30B23/02

CPC classification number: C30B33/08 ,  C30B23/02 ,  C30B29/36

Abstract: An 8-inch SiC single crystal substrate of an embodiment has a diameter in a range of 195 mm to 205 mm, a thickness in a range of 300 μm to 650 μm, a SORT of 50 μm or less, and an in-plane variation of the thickness of the substrate, which is the difference between the maximum and minimum substrate thickness at the center of the substrate and four points on the circumference of a circle having a radius half the radius of the substrate, is 1.5 μm or less.