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    Magnetic tunnel junction device and method for manufacturing the same
    21.
    发明申请
    Magnetic tunnel junction device and method for manufacturing the same 有权
    磁隧道结装置及其制造方法

    公开(公告)号：US20110045320A1

    公开(公告)日：2011-02-24

    申请号：US12658853

    申请日：2010-02-16

    申请人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

    发明人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

    IPC分类号： G11B5/706 ,  H01F1/01

    CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/14 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10 ,  Y10T428/115

    摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

    摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。

    Magnetic thin film and thin film magnetic device
    22.
    发明申请
    Magnetic thin film and thin film magnetic device 审中-公开
    磁性薄膜和薄膜磁性器件

    公开(公告)号：US20090197062A1

    公开(公告)日：2009-08-06

    申请号：US12320179

    申请日：2009-01-21

    申请人： Taku MASAI

    发明人： Taku MASAI

    IPC分类号： B32B7/02

    CPC分类号： H01F10/132 ,  H01F10/138 ,  H01F10/14 ,  H01F10/265 ,  H01F17/0006 ,  H01F41/042 ,  H01F41/046 ,  Y10T428/2495

    摘要： A magnetic thin film includes: a first magnetic film formed on a substrate; and a second magnetic film formed on the first magnetic film. The first magnetic film is a soft magnetic film having magnetic permeability higher than that of the second magnetic film. The second magnetic film is an iron-based soft magnetic film. Thickness ratio between the first magnetic film and the second magnetic film (=thickness of the first magnetic film/thickness of the second magnetic film) lies in a range of 0.005 to 0.030 both inclusive.

    摘要翻译： 磁性薄膜包括：形成在基板上的第一磁性膜; 以及形成在第一磁性膜上的第二磁性膜。 第一磁性膜是具有比第二磁性膜高的磁导率的软磁性膜。 第二磁性膜是铁基软磁性膜。 第一磁性膜和第二磁性膜之间的厚度比（=第一磁性膜的厚度/第二磁性膜的厚度）在0.005〜0.030的范围内。

    METHOD OF MANUFACTURING OSCILLATOR DEVICE
    23.
    发明申请
    METHOD OF MANUFACTURING OSCILLATOR DEVICE 有权
    制造振荡器装置的方法

    公开(公告)号：US20090061537A1

    公开(公告)日：2009-03-05

    申请号：US12201315

    申请日：2008-08-29

    申请人： Toshio Tomiyoshi ,  Takahisa Kato ,  Atsushi Kandori

    发明人： Toshio Tomiyoshi ,  Takahisa Kato ,  Atsushi Kandori

    IPC分类号： H01L41/22 ,  H01L21/00

    CPC分类号： H02K35/02 ,  H01F7/0289 ,  H01F7/127 ,  H01F7/14 ,  H01F10/14 ,  H01F10/16 ,  H01F2007/068 ,  H02K15/03

    摘要： A method of manufacturing oscillator devices each having an oscillator and a resilient supporting member for supporting the oscillator for oscillatory motion, includes a step of processing one and the same substrate to form oscillators and resilient supporting members of oscillator devices so that oscillators of adjacent oscillator devices are connected to each other, a step of forming or placing a magnetic material so that it extends across the connected oscillators of the adjacent oscillator devices, and a step of simultaneously cutting and separating the connected oscillators and the magnetic material formed or placed to extend across the connected oscillators, whereby oscillator devices such as oscillatory type actuators having good reliability and performance evenness can be manufactured with a good productivity.

    摘要翻译： 一种振荡器装置的制造方法，具有振荡器和用于支撑用于振荡的振荡器的弹性支撑构件，包括处理同一衬底以形成振荡器装置的振荡器和弹性支撑构件的步骤，使得相邻振荡器装置的振荡器 彼此连接，形成或放置磁性材料以使其延伸穿过相邻振荡器装置的连接的振荡器的步骤，以及同时切割和分离连接的振荡器和形成或放置以延伸的连接的振荡器和磁性材料的步骤 可以以良好的生产率制造连接的振荡器，由此可以制造具有良好可靠性和性能均匀性的振荡器装置如振荡型致动器。

    Inductance component and manufacturing method thereof
    24.
    发明授权
    Inductance component and manufacturing method thereof 有权
    电感元件及其制造方法

    公开(公告)号：US07403091B2

    公开(公告)日：2008-07-22

    申请号：US10572059

    申请日：2005-07-01

    申请人： Hitoshi Ishimoto ,  Nobuya Matsutani

    发明人： Hitoshi Ishimoto ,  Nobuya Matsutani

    IPC分类号： H01F27/28

    CPC分类号： H01F17/0006 ,  H01F10/14 ,  H01F10/16 ,  H01F10/265 ,  H01F17/04 ,  H01F2017/0066

    摘要： In an inductance component including coil and multi-layered magnetic body layer formed from first metal layer, first metal magnetic body layer, middle layer including copper oxide and second metal magnetic body layer, which are piled at least on one surface of base material, first and second metal magnetic body layers and include at least one of Fe, Ni and Co and middle layer is formed from a material having specific resistance larger than that of first and second metal magnetic body layers. In accordance with such a structure, provided can be a small-sized flat inductance component superior in mass-production and used in a high frequency band.

    摘要翻译： 在包括由第一金属层形成的线圈和多层磁性体层的电感分量中，第一金属磁体层，包括氧化铜和中间层的第二金属磁性体层至少堆叠在基材的至少一个表面上， 和第二金属磁体层，并且包括Fe，Ni和Co中的至少一种，中间层由比第一和第二金属磁性体层的电阻大的材料形成。 根据这样的结构，可以提供在批量生产中优异且用于高频带的小尺寸平面电感分量。

    Magneto-resistive element, magnetic head and magnetic storage apparatus
    27.
    发明申请
    Magneto-resistive element, magnetic head and magnetic storage apparatus 审中-公开
    磁阻元件，磁头和磁存储装置

    公开(公告)号：US20050264952A1

    公开(公告)日：2005-12-01

    申请号：US10952206

    申请日：2004-09-28

    申请人： Hirotaka Oshima

    发明人： Hirotaka Oshima

    IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/14 ,  H01F10/32

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/14 ,  H01F10/3272

    摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer. The first and second pinned magnetization layers are antiferromagnetically exchange-coupled. The first pinned magnetization layer includes a resistance control layer made of a ferromagnetic material that is added with an additive element.

    摘要翻译： 磁阻元件采用CPP结构，并包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。 钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层。 第一和第二钉扎磁化层是反铁磁交换耦合的。 第一钉扎磁化层包括由添加有添加元素的铁磁材料制成的电阻控制层。

    System and method for writing to a magnetic shift register
    28.
    发明申请
    System and method for writing to a magnetic shift register 有权
    用于写入磁移位寄存器的系统和方法

    公开(公告)号：US20040252538A1

    公开(公告)日：2004-12-16

    申请号：US10458147

    申请日：2003-06-10

    申请人： International Business Machines Corporation

    发明人： Stuart S.P. Parkin

    IPC分类号： G11C019/02

    CPC分类号： G11C19/0841 ,  G11C11/14 ,  G11C19/0808 ,  H01F10/14 ,  H01F41/26

    摘要： A writing device can change the direction of the magnetic moment in a magnetic shift register, thus writing information to the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to write to the magnetic shift register. When the domain wall is moved close to another magnetic material, the large fields of the domain wall change the direction of the magnetic moment in the magnetic material, effectively nullwritingnull to the magnetic material.

    摘要翻译： 写装置可以改变磁移位寄存器中磁矩的方向，从而将信息写入磁移位寄存器中的域或位。 与每个畴壁相关的是大磁场。 畴壁在非常小的空间中将磁性的变化从一个方向集中到另一个方向。 根据畴壁的性质，非常大的偶极边缘场可以从畴壁发出。 磁畴的这种特性用于写入磁性移位寄存器。 当畴壁移动靠近另一种磁性材料时，畴壁的大场改变磁性材料中磁矩的方向，有效地“写入”磁性材料。

    Soft magnetic thin film
    30.
    发明授权
    Soft magnetic thin film 失效
    软磁薄膜

    公开(公告)号：US5114800A

    公开(公告)日：1992-05-19

    申请号：US549996

    申请日：1990-07-09

    申请人： Osamu Shimizu ,  Kanji Nakanishi

    发明人： Osamu Shimizu ,  Kanji Nakanishi

    IPC分类号： G11B5/127 ,  G11B5/31 ,  H01F10/14 ,  H01F10/16 ,  H01F10/28

    CPC分类号： G11B5/1278 ,  G11B5/3109 ,  H01F10/14 ,  H01F10/16 ,  H01F10/28 ,  Y10S428/90 ,  Y10T428/115 ,  Y10T428/12465 ,  Y10T428/12799 ,  Y10T428/12951

    摘要： Uniaxially oriented soft magnetic thin film consists essentially of 1 to 15 atomic percent of Co and/or Ni, and the balance being Fe, and has a crystal structure of a body-centered cubic system, wherein the film is oriented substantially in the [111] direction and the absolute value of the saturation magnetostriction .lambda..sub.f of the film is not more than 5.times.10.sup.-6. The film has low coercivity 1 Oe or less and high magnetic permeability maintaining high saturation magnetic flux density of 18 kG or more. .lambda..sub.f reaches zero and is adjustable. Addition of 0.2 to 20 atomic percent of Ru, Mn, Cr and/or V increases wear resistance. The film is formed by deposition on {111} plane of GaAs substrate, or on c-plane of hexagonal B.sub.8 stracture.

    摘要翻译： 单向取向软磁性薄膜基本上由1〜15原子％的Co和/或Ni构成，余量为Fe，具有体心立方体系的晶体结构，其中膜取向为[111 ]方向，并且膜的饱和磁致伸缩λf的绝对值不大于5×10 -6。 该膜具有低矫顽力1Oe以下，高磁导率保持18kG以上的高饱和磁通密度。 λf达到零并且是可调节的。 添加0.2〜20原子％的Ru，Mn，Cr和/或V增加耐磨性。 该膜通过在GaAs衬底的{111}平面上或在六边形B8结构的c面上沉积而形成。