公开(公告)号：US07365347B2

公开(公告)日：2008-04-29

申请号：US11166679

申请日：2005-06-23

Applicant: Jin Ha Park

Inventor： Jin Ha Park

IPC: G01K1/08 ,  H01J3/14 ,  H01J3/26

CPC classification number: H01J37/3023 ,  H01J2237/30411 ,  H01J2237/31701

Abstract: Disclosed herein is an ion implantation apparatus for use in manufacturing of a semiconductor device, which has a software program including an option for selecting a manipulator, enabling a time for beam tuning to be minimized. The ion implantation apparatus further includes a manipulator for extracting and focusing an ion source and an ion beam, a control block for controlling overall operation of the ion implantation apparatus and recognizing a newly installed manipulator, and a control window on which a selection menu is displayed, allowing recipe data to be selected on a screen. When installing a replacement manipulator, recipe data for the replacement manipulator can be selected to improve beam tuning set up time.

Abstract translation: 本文公开了一种用于制造半导体器件的离子注入装置，其具有包括用于选择操纵器的选项的软件程序，使得能够使波束调谐的时间最小化。 离子注入装置还包括用于提取和聚焦离子源和离子束的操纵器，用于控制离子注入装置的总体操作并识别新安装的操纵器的控制块以及显示选择菜单的控制窗口 ，允许在屏幕上选择食谱数据。 当安装更换机械手时，可以选择更换机械手的配方数据，以改善梁的调整设置时间。

公开(公告)号：US07267731B2

公开(公告)日：2007-09-11

申请号：US10712147

申请日：2003-11-13

Applicant: Kouji Iwasaki

Inventor： Kouji Iwasaki

IPC: C21D1/54

CPC classification number: C23C16/047 ,  B33Y50/02 ,  H01J37/3023 ,  H01J2237/30411 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: A method of fabricating a three-dimensional microstructure provides data corresponding to information relating to the structure of a three-dimensional microstructure design. A sample is processed in accordance with the provided data by irradiating the sample with a charged-particle beam while controlling processing conditions of the charged-particle beam. Dimensions of the processed sample are compared with the provided data to identify differences between the structure of the processed sample and the structure of the three-dimensional microstructure design. The sample is then irradiated again with a charged-particle beam to correct the identified structural differences while adjusting the processing conditions of the charged-particle beam to thereby fabricate a three-dimensional microstructure having a structure substantially the same as the structure of the three-dimensional microstructure design.

Abstract translation: 制造三维微结构的方法提供对应于与三维微结构设计的结构有关的信息的数据。 在控制带电粒子束的处理条件的同时，通过用带电粒子束照射样品，根据提供的数据处理样品。 将处理过的样品的尺寸与提供的数据进行比较，以识别经处理样品的结构与三维微结构设计的结构之间的差异。 然后再次用带电粒子束照射样品以校正所识别的结构差异，同时调节带电粒子束的处理条件，从而制造具有与三维结构基本相同的结构的三维微结构， 尺寸微结构设计。

公开(公告)号：US20060292709A1

公开(公告)日：2006-12-28

申请号：US10546988

申请日：2004-02-16

Applicant: Takayuki Hoshino ,  Shinji Matsui ,  Kazushige Kondo

Inventor： Takayuki Hoshino ,  Shinji Matsui ,  Kazushige Kondo

IPC: H01L21/66

CPC classification number: B81C99/00 ,  B33Y50/00 ,  B33Y50/02 ,  B81C99/0095 ,  C23C16/047 ,  C23C16/4418 ,  H01J37/3056 ,  H01J2237/30411

Abstract: There are provided a fabrication method of a nanostructure by FIB-CVD which enables fabrication of a three-dimensional nanostructure, especially that without a support such as a terrace structure or a hollow structure, and a drawing system thereof. The three-dimensional nanostructure is fabricated by controlling a focused ion beam to determine a beam irradiation position or time based on discrete drawing data of a multilayer structure generated by calculating a cross-sectional shape divided in a vertical direction of a three-dimensional nanostructure model designed using an electronic microcomputer.

Abstract translation: 提供了一种通过FIB-CVD的纳米结构的制造方法，其能够制造三维纳米结构，特别是没有诸如露台结构或中空结构的支撑及其拉制系统。 基于通过计算在三维纳米结构模型的垂直方向上划分的横截面形状而生成的多层结构的离散绘图数据，通过控制聚焦离子束来控制聚焦离子束来确定光束照射位置或时间来制造三维纳米结构 使用电子微机设计。

公开(公告)号：US20060249696A1

公开(公告)日：2006-11-09

申请号：US11123082

申请日：2005-05-06

Applicant: Shengwu Chang ,  Joseph Olson ,  Damian Brennan

Inventor： Shengwu Chang ,  Joseph Olson ,  Damian Brennan

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J2237/30411 ,  H01J2237/31703

Abstract: A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.

Abstract translation: 公开了一种用于调整离子注入机系统的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。 该方法可以包括在多个波束线元件之间建立一个或多个关系。 该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。

公开(公告)号：US06956212B2

公开(公告)日：2005-10-18

申请号：US10963815

申请日：2004-10-14

Applicant: Hideo Todokoro

Inventor： Hideo Todokoro

IPC: G01N23/04 ,  G01Q10/00 ,  G01Q30/02 ,  G01Q30/04 ,  H01J37/302 ,  H01J37/304 ,  G01N23/00

CPC classification number: H01J37/3023 ,  G01N23/04 ,  H01J37/304 ,  H01J2237/304 ,  H01J2237/30411 ,  H01J2237/30416

Abstract: An electron microscope observation system and an observation method are provided. The electron microscope observation system and the observation method can reduce initial investment, and can eliminate burden of maintenance of the apparatus, and can easily and appropriately perform preparation of a sample.An electron microscope, an image display unit of an electron microscope center side for displaying an image of image signals obtained by irradiating electrons on a sample using the electron microscope, a transmission path for transmitting the image signals and an image display unit of an operation center side for displaying a screen of the electron microscope by the image signals are provided, and an observation appointment and approval screen is displayed on the two image display units, and the sample preparation-processed in the observation center side based on an instruction given from the operation center is loaded, and observation of the sample is executed based on sample observation condition information to output image information, and the observation image is displayed on the two image display unites, and charge processing is executed based on a content level of the observation including preparation processing of the sample and occupying hours of the electron microscope to display the charge processing result.

Abstract translation: 提供电子显微镜观察系统和观察方法。 电子显微镜观察系统和观察方法可以减少初始投资，并且可以消除装置的维护负担，并且可以容易且适当地执行样品的制备。 电子显微镜，电子显微镜中心侧的图像显示单元，用于显示通过使用电子显微镜照射样品而获得的图像信号的图像，用于传输图像信号的传输路径和操作中心的图像显示单元 提供用于通过图像信号显示电子显微镜的屏幕的一侧，并且在两个图像显示单元上显示观察约会和批准屏幕，并且基于从该图像信号给出的指令在观察中心侧处理 操作中心被加载，并且基于样本观察条件信息执行样本的观察以输出图像信息，并且将观察图像显示在两个图像显示单元上，并且基于包括以下的观察的内容水平执行计费处理： 样品的准备处理和电子显微镜占据时间 计费处理结果。

公开(公告)号：US5561293A

公开(公告)日：1996-10-01

申请号：US425110

申请日：1995-04-20

Applicant: Yeng-Kaung Peng ,  Thao H. Vo ,  Paul M. Wong

Inventor： Yeng-Kaung Peng ,  Thao H. Vo ,  Paul M. Wong

IPC: H01J37/30 ,  H01L21/66 ,  H01J37/00

CPC classification number: H01J37/3005 ,  H01L22/20 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/30411 ,  H01L22/12

Abstract: A method of analyzing a failure of a sample, such as a wafer or a package unit made from a die sliced from the wafer, uses a computer aided design (CAD) tool in conjunction with a dual beam scanner and reverse engineering to improve the yield of the product. The computer aided design tool provides navigation to a location of interest over a layout of a wafer sample which has failed a test. The location of interest of the sample is then inspected using the dual beam scanner. The inspection may be made with either a focused ion beam scan or with a scanning electron microscope scan to provide different types of scan images and information. After inspection, a reverse engineering process (stripping back) is performed on the sample and the sample is inspected again to determine the cause of the failure of the sample. Once the cause of the failure is determined, the manufacturing process can be changed to improve the yield of the wafers.

Abstract translation: 分析样品故障的方法，例如晶片或由晶片切片的芯片制成的封装单元，使用计算机辅助设计（CAD）工具结合双光束扫描仪和逆向工程来提高产量 的产品。 计算机辅助设计工具提供导航到在测试失败的晶片样本的布局上感兴趣的位置。 然后使用双光束扫描仪检查样品的感兴趣位置。 可以用聚焦离子束扫描或扫描电子显微镜扫描进行检查，以提供不同类型的扫描图像和信息。 在检查后，对样品进行逆向工程（剥离），并再次检查样品以确定样品失效的原因。 一旦确定了故障的原因，可以改变制造过程以提高晶片的产量。

公开(公告)号：US5171964A

公开(公告)日：1992-12-15

申请号：US745313

申请日：1991-08-15

Applicant: Michael A. Booke ,  Michael H. W. Kallmeyer ,  Nabil A. Rizk ,  You-Wen Yau

Inventor： Michael A. Booke ,  Michael H. W. Kallmeyer ,  Nabil A. Rizk ,  You-Wen Yau

IPC: H01J37/302 ,  H01J37/31 ,  H05K3/00

CPC classification number: H01J37/31 ,  H01J37/3023 ,  H01J2237/30411 ,  H01J2237/317 ,  H05K3/0017

Abstract: A high precision system for machining substrates by means of an energy beam includes real time digital signal processor control and a deflection system providing control, within a predetermined field of the substrate, of the angle at which the beam machines the substrate. An electron beam is used in a vacuum chamber in a preferred embodiment. The system also includes an x-y table for positioning the substrate and may have provision for detecting the x-y position and angular misregistration of the substrate. Dynamic forms and stigmator control may be used to produce a uniform beam within the field. The system allows a high speed vector machining process, which optimizes the overall system throughput by minimizing the settling time of the deflection system.

Abstract translation: 用于通过能量束加工衬底的高精度系统包括实时数字信号处理器控制和偏转系统，该偏转系统在衬底的预定场域内提供光束加工衬底的角度的控制。 在优选实施例中，在真空室中使用电子束。 该系统还包括用于定位衬底的x-y工作台，并且可以具有用于检测衬底的x-y位置和角度对准的设置。 可以使用动态形式和姿态控制来在场内产生均匀的波束。 该系统允许高速矢量加工过程，其通过最小化偏转系统的建立时间来优化整个系统的吞吐量。

公开(公告)号：US5145551A

公开(公告)日：1992-09-08

申请号：US759307

申请日：1991-09-13

Applicant: Michael A. Booke ,  Michael H. W. Kallmeyer ,  Nabil A. Rizk ,  You-Wen Yau

Inventor： Michael A. Booke ,  Michael H. W. Kallmeyer ,  Nabil A. Rizk ,  You-Wen Yau

IPC: H01J37/302 ,  H01J37/31 ,  H05K3/00

CPC classification number: H01J37/3023 ,  H01J37/31 ,  H01J2237/30411 ,  H01J2237/317 ,  H05K3/0017

Abstract: A high precision system for machining substrates by means of an energy beam includes real time digital signal processor control and a deflection system providing control, within a predetermined field of the substrate, of the angle at which the beam machines the substrate. An electron beam is used in a vacuum chamber in a preferred embodiment. The system also includes an x-y table for positioning the substrate and may have provision for detecting the x-y position and angular misregistration of the substrate. Dynamic forms and stigmator control may be used to produce a uniform beam within the field. The system allows a high speed vector machining process, which optimizes the overall system throughput by minimizing the settling time of the deflection system.

Abstract translation: 用于通过能量束加工衬底的高精度系统包括实时数字信号处理器控制和偏转系统，该偏转系统在衬底的预定场域内提供光束加工衬底的角度的控制。 在优选实施例中，在真空室中使用电子束。 该系统还包括用于定位衬底的x-y工作台，并且可以具有用于检测衬底的x-y位置和角度对准的设置。 可以使用动态形式和姿态控制来在场内产生均匀的波束。 该系统允许高速矢量加工过程，其通过最小化偏转系统的建立时间来优化整个系统的吞吐量。

公开(公告)号：US11694875B2

公开(公告)日：2023-07-04

申请号：US17400580

申请日：2021-08-12

Applicant: JEOL Ltd.

Inventor： Masakazu Iwanaga

IPC: H01J37/302 ,  G06F3/0482 ,  G06F3/04847

CPC classification number: H01J37/3026 ,  G06F3/0482 ,  G06F3/04847 ,  H01J2237/30411 ,  H01J2237/30483 ,  H01J2237/31761

Abstract: A charged particle beam drawing device includes: a storage unit that stores a pattern generation program for generating pattern data, the pattern generation program being a program in which an instruction for specifying a type of a figure and an instruction for specifying a regular arrangement of the figure are described; an execution unit that executes the pattern generation program stored in the storage unit; and a control unit that performs drawing control based on the pattern data generated by the executed pattern generation program.

公开(公告)号：US20190013179A1

公开(公告)日：2019-01-10

申请号：US16069796

申请日：2016-03-18

Applicant: HITACHI, LTD.

Inventor： Tetsufumi KAWAMURA ,  Misuzu SAGAWA ,  Kazuki WATANABE ,  Keiji WATANABE ,  Shuntaro MACHIDA ,  Nobuyuki SUGII ,  Daisuke RYUZAKI

IPC: H01J37/28 ,  H01L21/3065 ,  B81C1/00 ,  H01L21/66 ,  H01J37/305 ,  H01J37/302

CPC classification number: H01J37/28 ,  B81C1/00 ,  B81C2201/0132 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/30411 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L22/26

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.